Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer
•2DEG and 2DHG coexist in the AlGaN/AlN/GaN/AlGaN DH-structure.•The sheet densities of 2DEG and 2DHG vary with buffer Al content and GaN thickness.•The conditions for the disappearance of 2DHG are discussed.•Increasing buffer Al content provides better electron confinement.•Dislocation scattering is...
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| Veröffentlicht in: | Journal of alloys and compounds 2013-11, Vol.576, p.48-53 |
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| container_title | Journal of alloys and compounds |
| container_volume | 576 |
| creator | Peng, Enchao Wang, Xiaoliang Xiao, Hongling Wang, Cuimei Yin, Haibo Chen, Hong Feng, Chun Jiang, Lijuan Hou, Xun Wang, Zhanguo |
| description | •2DEG and 2DHG coexist in the AlGaN/AlN/GaN/AlGaN DH-structure.•The sheet densities of 2DEG and 2DHG vary with buffer Al content and GaN thickness.•The conditions for the disappearance of 2DHG are discussed.•Increasing buffer Al content provides better electron confinement.•Dislocation scattering is reduced in the DH-structure.
This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better electron confinement. And under certain conditions the DH-structure shows bipolar characteristics, with an additional two-dimensional hole gas (2DHG) formed at GaN/AlGaN interface. The influence of the buffer Al content and GaN channel thickness on the 2DEG and 2DHG sheet densities are investigated, and the conditions for the disappearance of 2DHG are discussed. Also, the mobility inhibited by dislocation scattering is enhanced in DH-structure due to the enhancement of screening effect of the 2DEG. |
| doi_str_mv | 10.1016/j.jallcom.2013.04.085 |
| format | Article |
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This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better electron confinement. And under certain conditions the DH-structure shows bipolar characteristics, with an additional two-dimensional hole gas (2DHG) formed at GaN/AlGaN interface. The influence of the buffer Al content and GaN channel thickness on the 2DEG and 2DHG sheet densities are investigated, and the conditions for the disappearance of 2DHG are discussed. Also, the mobility inhibited by dislocation scattering is enhanced in DH-structure due to the enhancement of screening effect of the 2DEG.</description><identifier>ISSN: 0925-8388</identifier><identifier>EISSN: 1873-4669</identifier><identifier>DOI: 10.1016/j.jallcom.2013.04.085</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>Aluminum ; Aluminum gallium nitrides ; Aluminum nitride ; Channels ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Density ; Electron states ; Electronic properties ; Exact sciences and technology ; Gallium nitrides ; Heterojunctions ; Methods of electronic structure calculations ; Nitride materials ; Physics ; Semiconductors ; Two dimensional</subject><ispartof>Journal of alloys and compounds, 2013-11, Vol.576, p.48-53</ispartof><rights>2013 Elsevier B.V.</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c405t-642b0fc5e17c896b05d6dd0b31866705d27ff6c93eb67218a22459bfd2724fe93</citedby><cites>FETCH-LOGICAL-c405t-642b0fc5e17c896b05d6dd0b31866705d27ff6c93eb67218a22459bfd2724fe93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jallcom.2013.04.085$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>315,782,786,3552,27931,27932,46002</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27638154$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Peng, Enchao</creatorcontrib><creatorcontrib>Wang, Xiaoliang</creatorcontrib><creatorcontrib>Xiao, Hongling</creatorcontrib><creatorcontrib>Wang, Cuimei</creatorcontrib><creatorcontrib>Yin, Haibo</creatorcontrib><creatorcontrib>Chen, Hong</creatorcontrib><creatorcontrib>Feng, Chun</creatorcontrib><creatorcontrib>Jiang, Lijuan</creatorcontrib><creatorcontrib>Hou, Xun</creatorcontrib><creatorcontrib>Wang, Zhanguo</creatorcontrib><title>Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer</title><title>Journal of alloys and compounds</title><description>•2DEG and 2DHG coexist in the AlGaN/AlN/GaN/AlGaN DH-structure.•The sheet densities of 2DEG and 2DHG vary with buffer Al content and GaN thickness.•The conditions for the disappearance of 2DHG are discussed.•Increasing buffer Al content provides better electron confinement.•Dislocation scattering is reduced in the DH-structure.
This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better electron confinement. And under certain conditions the DH-structure shows bipolar characteristics, with an additional two-dimensional hole gas (2DHG) formed at GaN/AlGaN interface. The influence of the buffer Al content and GaN channel thickness on the 2DEG and 2DHG sheet densities are investigated, and the conditions for the disappearance of 2DHG are discussed. Also, the mobility inhibited by dislocation scattering is enhanced in DH-structure due to the enhancement of screening effect of the 2DEG.</description><subject>Aluminum</subject><subject>Aluminum gallium nitrides</subject><subject>Aluminum nitride</subject><subject>Channels</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Density</subject><subject>Electron states</subject><subject>Electronic properties</subject><subject>Exact sciences and technology</subject><subject>Gallium nitrides</subject><subject>Heterojunctions</subject><subject>Methods of electronic structure calculations</subject><subject>Nitride materials</subject><subject>Physics</subject><subject>Semiconductors</subject><subject>Two dimensional</subject><issn>0925-8388</issn><issn>1873-4669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkU9r3DAQxUVoIdu0HyGgS6AXe_Xf8qlsQ5sWQnppz0KWR6yM1tpKcku-fR289JrLDDP83jyYh9AtJS0lVO2ndrIxunRqGaG8JaIlWl6hHdUdb4RS_Ru0Iz2TjeZaX6N3pUyEENpzukPhczinaDN2R5utq5BDqcEVnDw-xAf7tD_Ep_3W14rHtAwR8BFWMk3L7GpIMy41L64uGfDfUI-bENuCh8V7yDjaZ8jv0VtvY4EPl36Dfn398vP-W_P44-H7_eGxcYLI2ijBBuKdBNo53auByFGNIxk41Up168Q675XrOQyqY1RbxoTsB7_umfDQ8xv0cbt7zun3AqWaUygOYrQzpKUYKikXHSGMvY4KJaTuKZcrKjfU5VRKBm_OOZxsfjaUmJcUzGQuKZiXFAwRZk1h1d1dLGxxNvpsZxfKfzHrFNdUipX7tHGwvuZPgGyKCzA7GEMGV82YwitO_wDDkZ9R</recordid><startdate>20131105</startdate><enddate>20131105</enddate><creator>Peng, Enchao</creator><creator>Wang, Xiaoliang</creator><creator>Xiao, Hongling</creator><creator>Wang, Cuimei</creator><creator>Yin, Haibo</creator><creator>Chen, Hong</creator><creator>Feng, Chun</creator><creator>Jiang, Lijuan</creator><creator>Hou, Xun</creator><creator>Wang, Zhanguo</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20131105</creationdate><title>Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer</title><author>Peng, Enchao ; Wang, Xiaoliang ; Xiao, Hongling ; Wang, Cuimei ; Yin, Haibo ; Chen, Hong ; Feng, Chun ; Jiang, Lijuan ; Hou, Xun ; Wang, Zhanguo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c405t-642b0fc5e17c896b05d6dd0b31866705d27ff6c93eb67218a22459bfd2724fe93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Aluminum</topic><topic>Aluminum gallium nitrides</topic><topic>Aluminum nitride</topic><topic>Channels</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Density</topic><topic>Electron states</topic><topic>Electronic properties</topic><topic>Exact sciences and technology</topic><topic>Gallium nitrides</topic><topic>Heterojunctions</topic><topic>Methods of electronic structure calculations</topic><topic>Nitride materials</topic><topic>Physics</topic><topic>Semiconductors</topic><topic>Two dimensional</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Peng, Enchao</creatorcontrib><creatorcontrib>Wang, Xiaoliang</creatorcontrib><creatorcontrib>Xiao, Hongling</creatorcontrib><creatorcontrib>Wang, Cuimei</creatorcontrib><creatorcontrib>Yin, Haibo</creatorcontrib><creatorcontrib>Chen, Hong</creatorcontrib><creatorcontrib>Feng, Chun</creatorcontrib><creatorcontrib>Jiang, Lijuan</creatorcontrib><creatorcontrib>Hou, Xun</creatorcontrib><creatorcontrib>Wang, Zhanguo</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Peng, Enchao</au><au>Wang, Xiaoliang</au><au>Xiao, Hongling</au><au>Wang, Cuimei</au><au>Yin, Haibo</au><au>Chen, Hong</au><au>Feng, Chun</au><au>Jiang, Lijuan</au><au>Hou, Xun</au><au>Wang, Zhanguo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2013-11-05</date><risdate>2013</risdate><volume>576</volume><spage>48</spage><epage>53</epage><pages>48-53</pages><issn>0925-8388</issn><eissn>1873-4669</eissn><abstract>•2DEG and 2DHG coexist in the AlGaN/AlN/GaN/AlGaN DH-structure.•The sheet densities of 2DEG and 2DHG vary with buffer Al content and GaN thickness.•The conditions for the disappearance of 2DHG are discussed.•Increasing buffer Al content provides better electron confinement.•Dislocation scattering is reduced in the DH-structure.
This is a theoretical study of AlGaN/AlN/GaN/AlGaN double heterojunction (DH) structure with AlGaN as buffer layer. Our calculation shows that as the buffer Al content increases, though two-dimensional electron gas (2DEG) sheet density decreases, the channel back-barrier caused by polarization-induced electric field in GaN provides better electron confinement. And under certain conditions the DH-structure shows bipolar characteristics, with an additional two-dimensional hole gas (2DHG) formed at GaN/AlGaN interface. The influence of the buffer Al content and GaN channel thickness on the 2DEG and 2DHG sheet densities are investigated, and the conditions for the disappearance of 2DHG are discussed. Also, the mobility inhibited by dislocation scattering is enhanced in DH-structure due to the enhancement of screening effect of the 2DEG.</abstract><cop>Kidlington</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jallcom.2013.04.085</doi><tpages>6</tpages></addata></record> |
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| subjects | Aluminum Aluminum gallium nitrides Aluminum nitride Channels Condensed matter: electronic structure, electrical, magnetic, and optical properties Density Electron states Electronic properties Exact sciences and technology Gallium nitrides Heterojunctions Methods of electronic structure calculations Nitride materials Physics Semiconductors Two dimensional |
| title | Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer |
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