Properties of tantalum oxynitride thin films produced by magnetron sputtering: The influence of processing parameters

The main purpose of this work is to present and to interpret the change of structure and physical properties of tantalum oxynitride (TaNxOy) thin films, produced by dc reactive magnetron sputtering, by varying the processing parameters. A set of TaNxOy films was prepared by varying the reactive gase...

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Veröffentlicht in:Vacuum 2013-12, Vol.98, p.63-69
Hauptverfasser: Cristea, D., Constantin, D., Crisan, A., Abreu, C.S., Gomes, J.R., Barradas, N.P., Alves, E., Moura, C., Vaz, F., Cunha, L.
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container_end_page 69
container_issue
container_start_page 63
container_title Vacuum
container_volume 98
creator Cristea, D.
Constantin, D.
Crisan, A.
Abreu, C.S.
Gomes, J.R.
Barradas, N.P.
Alves, E.
Moura, C.
Vaz, F.
Cunha, L.
description The main purpose of this work is to present and to interpret the change of structure and physical properties of tantalum oxynitride (TaNxOy) thin films, produced by dc reactive magnetron sputtering, by varying the processing parameters. A set of TaNxOy films was prepared by varying the reactive gases flow rate, using a N2/O2 gas mixture with a concentration ratio of 17:3. The different films, obtained by this process, exhibited significant differences. The obtained composition and the interpretation of X-ray diffraction results, shows that, depending on the partial pressure of the reactive gases, the films are: essentially dark grey metallic, when the atomic ratio (N + O)/Ta 
doi_str_mv 10.1016/j.vacuum.2013.03.017
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A set of TaNxOy films was prepared by varying the reactive gases flow rate, using a N2/O2 gas mixture with a concentration ratio of 17:3. The different films, obtained by this process, exhibited significant differences. The obtained composition and the interpretation of X-ray diffraction results, shows that, depending on the partial pressure of the reactive gases, the films are: essentially dark grey metallic, when the atomic ratio (N + O)/Ta < 0.1, evidencing a tetragonal β-Ta structure; grey-brownish, when 0.1 < (N + O)/Ta < 1, exhibiting a face-centred cubic (fcc) TaN-like structure; and transparent oxide-type, when (N + O)/Ta > 1, evidencing the existence of Ta2O5, but with an amorphous structure. These transparent films exhibit refractive indexes, in the visible region, always higher than 2.0. The wear resistance of the films is relatively good. The best behaviour was obtained for the films with (N + O)/Ta ≈ 0.5 and (N + O)/Ta ≈ 1.3. •Sub-stoichiometric TaNxOy films (0.1 < x + y < 1) exhibit a fcc Ta(O,N) structure.•Over-stoichiometric TaNxOy films (x + y > 1) exhibit tendency to amorphization.•Films with high O content are transparent and have refractive index higher than 2.2.•TaNxOy films present low kinetic friction coefficient (μK < 0.16).]]></description><identifier>ISSN: 0042-207X</identifier><identifier>EISSN: 1879-2715</identifier><identifier>DOI: 10.1016/j.vacuum.2013.03.017</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Atomic structure ; Concentration (composition) ; Magnetron sputtering ; Optical properties ; Oxynitrides ; Partial pressure ; Process parameters ; Structure ; Tantalum ; Tantalum oxynitride ; Thin films ; Tribological behaviour</subject><ispartof>Vacuum, 2013-12, Vol.98, p.63-69</ispartof><rights>2013 Elsevier Ltd</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c479t-744ef4fc3c9f3377ce181d7b2517b36443f445e6c1797b31cb929d5983f3fa8d3</citedby><cites>FETCH-LOGICAL-c479t-744ef4fc3c9f3377ce181d7b2517b36443f445e6c1797b31cb929d5983f3fa8d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0042207X13000973$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Cristea, D.</creatorcontrib><creatorcontrib>Constantin, D.</creatorcontrib><creatorcontrib>Crisan, A.</creatorcontrib><creatorcontrib>Abreu, C.S.</creatorcontrib><creatorcontrib>Gomes, J.R.</creatorcontrib><creatorcontrib>Barradas, N.P.</creatorcontrib><creatorcontrib>Alves, E.</creatorcontrib><creatorcontrib>Moura, C.</creatorcontrib><creatorcontrib>Vaz, F.</creatorcontrib><creatorcontrib>Cunha, L.</creatorcontrib><title>Properties of tantalum oxynitride thin films produced by magnetron sputtering: The influence of processing parameters</title><title>Vacuum</title><description><![CDATA[The main purpose of this work is to present and to interpret the change of structure and physical properties of tantalum oxynitride (TaNxOy) thin films, produced by dc reactive magnetron sputtering, by varying the processing parameters. A set of TaNxOy films was prepared by varying the reactive gases flow rate, using a N2/O2 gas mixture with a concentration ratio of 17:3. The different films, obtained by this process, exhibited significant differences. The obtained composition and the interpretation of X-ray diffraction results, shows that, depending on the partial pressure of the reactive gases, the films are: essentially dark grey metallic, when the atomic ratio (N + O)/Ta < 0.1, evidencing a tetragonal β-Ta structure; grey-brownish, when 0.1 < (N + O)/Ta < 1, exhibiting a face-centred cubic (fcc) TaN-like structure; and transparent oxide-type, when (N + O)/Ta > 1, evidencing the existence of Ta2O5, but with an amorphous structure. These transparent films exhibit refractive indexes, in the visible region, always higher than 2.0. The wear resistance of the films is relatively good. The best behaviour was obtained for the films with (N + O)/Ta ≈ 0.5 and (N + O)/Ta ≈ 1.3. •Sub-stoichiometric TaNxOy films (0.1 < x + y < 1) exhibit a fcc Ta(O,N) structure.•Over-stoichiometric TaNxOy films (x + y > 1) exhibit tendency to amorphization.•Films with high O content are transparent and have refractive index higher than 2.2.•TaNxOy films present low kinetic friction coefficient (μK < 0.16).]]></description><subject>Atomic structure</subject><subject>Concentration (composition)</subject><subject>Magnetron sputtering</subject><subject>Optical properties</subject><subject>Oxynitrides</subject><subject>Partial pressure</subject><subject>Process parameters</subject><subject>Structure</subject><subject>Tantalum</subject><subject>Tantalum oxynitride</subject><subject>Thin films</subject><subject>Tribological behaviour</subject><issn>0042-207X</issn><issn>1879-2715</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9UMtKBDEQDKLg-vgDDzl6mTWvmcx4EER8gaAHBW8hm-lolpnMmIe4f2-W9SwUNHRXFV2F0BklS0poc7FefmuT87hkhPIlKaByDy1oK7uKSVrvowUhglWMyPdDdBTjmhDCGtIuUH4J0wwhOYh4sjhpn_SQRzz9bLxLwfWA06fz2LphjHgOU58N9Hi1waP-8JDC5HGcc0oQnP-4xK-fgJ23QwZvYOtYJAZiLEc866BHKMx4gg6sHiKc_s1j9HZ3-3rzUD093z_eXD9VRsguVVIIsMIabjrLuZQGaEt7uWI1lSveCMGtEDU0hsquLKhZdazr667lllvd9vwYne98yxdfGWJSo4sGhkF7mHJUtKZc1Iy1TaGKHdWEKcYAVs3BjTpsFCVq27Jaq13LatuyIgVUFtnVTgYlxreDoKJx2-y9C2CS6if3v8EvUEqK1w</recordid><startdate>20131201</startdate><enddate>20131201</enddate><creator>Cristea, D.</creator><creator>Constantin, D.</creator><creator>Crisan, A.</creator><creator>Abreu, C.S.</creator><creator>Gomes, J.R.</creator><creator>Barradas, N.P.</creator><creator>Alves, E.</creator><creator>Moura, C.</creator><creator>Vaz, F.</creator><creator>Cunha, L.</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20131201</creationdate><title>Properties of tantalum oxynitride thin films produced by magnetron sputtering: The influence of processing parameters</title><author>Cristea, D. ; Constantin, D. ; Crisan, A. ; Abreu, C.S. ; Gomes, J.R. ; Barradas, N.P. ; Alves, E. ; Moura, C. ; Vaz, F. ; Cunha, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c479t-744ef4fc3c9f3377ce181d7b2517b36443f445e6c1797b31cb929d5983f3fa8d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Atomic structure</topic><topic>Concentration (composition)</topic><topic>Magnetron sputtering</topic><topic>Optical properties</topic><topic>Oxynitrides</topic><topic>Partial pressure</topic><topic>Process parameters</topic><topic>Structure</topic><topic>Tantalum</topic><topic>Tantalum oxynitride</topic><topic>Thin films</topic><topic>Tribological behaviour</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cristea, D.</creatorcontrib><creatorcontrib>Constantin, D.</creatorcontrib><creatorcontrib>Crisan, A.</creatorcontrib><creatorcontrib>Abreu, C.S.</creatorcontrib><creatorcontrib>Gomes, J.R.</creatorcontrib><creatorcontrib>Barradas, N.P.</creatorcontrib><creatorcontrib>Alves, E.</creatorcontrib><creatorcontrib>Moura, C.</creatorcontrib><creatorcontrib>Vaz, F.</creatorcontrib><creatorcontrib>Cunha, L.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Vacuum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cristea, D.</au><au>Constantin, D.</au><au>Crisan, A.</au><au>Abreu, C.S.</au><au>Gomes, J.R.</au><au>Barradas, N.P.</au><au>Alves, E.</au><au>Moura, C.</au><au>Vaz, F.</au><au>Cunha, L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Properties of tantalum oxynitride thin films produced by magnetron sputtering: The influence of processing parameters</atitle><jtitle>Vacuum</jtitle><date>2013-12-01</date><risdate>2013</risdate><volume>98</volume><spage>63</spage><epage>69</epage><pages>63-69</pages><issn>0042-207X</issn><eissn>1879-2715</eissn><abstract><![CDATA[The main purpose of this work is to present and to interpret the change of structure and physical properties of tantalum oxynitride (TaNxOy) thin films, produced by dc reactive magnetron sputtering, by varying the processing parameters. A set of TaNxOy films was prepared by varying the reactive gases flow rate, using a N2/O2 gas mixture with a concentration ratio of 17:3. The different films, obtained by this process, exhibited significant differences. The obtained composition and the interpretation of X-ray diffraction results, shows that, depending on the partial pressure of the reactive gases, the films are: essentially dark grey metallic, when the atomic ratio (N + O)/Ta < 0.1, evidencing a tetragonal β-Ta structure; grey-brownish, when 0.1 < (N + O)/Ta < 1, exhibiting a face-centred cubic (fcc) TaN-like structure; and transparent oxide-type, when (N + O)/Ta > 1, evidencing the existence of Ta2O5, but with an amorphous structure. These transparent films exhibit refractive indexes, in the visible region, always higher than 2.0. The wear resistance of the films is relatively good. The best behaviour was obtained for the films with (N + O)/Ta ≈ 0.5 and (N + O)/Ta ≈ 1.3. •Sub-stoichiometric TaNxOy films (0.1 < x + y < 1) exhibit a fcc Ta(O,N) structure.•Over-stoichiometric TaNxOy films (x + y > 1) exhibit tendency to amorphization.•Films with high O content are transparent and have refractive index higher than 2.2.•TaNxOy films present low kinetic friction coefficient (μK < 0.16).]]></abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.vacuum.2013.03.017</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record>
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subjects Atomic structure
Concentration (composition)
Magnetron sputtering
Optical properties
Oxynitrides
Partial pressure
Process parameters
Structure
Tantalum
Tantalum oxynitride
Thin films
Tribological behaviour
title Properties of tantalum oxynitride thin films produced by magnetron sputtering: The influence of processing parameters
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