Enhancement of integrity of graphene transferred by interface energy modulation
We report on the systematic studies of the parameters governing the integrity of graphene film during general “wet” transfer from a thermodynamic point of view. We chose polystyrene (PS) as a test carrier material and attempted to use eight different solvents to find optimal conditions for the graph...
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| Veröffentlicht in: | Carbon (New York) 2013-12, Vol.65, p.165-174 |
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| creator | Kim, Un Jeong Hur, Jaehyun Cheon, Sangmo Chung, Dae-Young Son, Hyungbin Park, Yeonsang Roh, Young-Geun Kim, Jineun Lee, Jaesoong Kim, Sang Won Im, Kyuhyun Park, Nokyoung Kim, Juhun Hwang, Sungwoo Park, Wanjun Lee, Chang-Won |
| description | We report on the systematic studies of the parameters governing the integrity of graphene film during general “wet” transfer from a thermodynamic point of view. We chose polystyrene (PS) as a test carrier material and attempted to use eight different solvents to find optimal conditions for the graphene transfer from a catalyst film to a desired substrate without defects. When parameterizing the conventional chemical properties of solvents, the boiling points and surface tension were found to be critical in determining the quality of the transferred graphene. During the formation step of a conformal PS film on a graphene surface before catalyst etching, a solvent with a boiling point over ∼140°C was essential. During the following PS film removal step, a solvent with surface tension higher than approximately 29dyn/cm led to the formation of a continuous graphene film without cracks and holes. In addition, a high spin-coating velocity and lower concentration of PS in the solvent enhanced the quality of a transferred graphene film. The UV treatment of Si/SiO2 (100nm) was also found to improve the adhesion of the graphene on substrates. By electrical characterization, morphological differences were found to affect the electrical properties markedly. |
| doi_str_mv | 10.1016/j.carbon.2013.08.010 |
| format | Article |
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We chose polystyrene (PS) as a test carrier material and attempted to use eight different solvents to find optimal conditions for the graphene transfer from a catalyst film to a desired substrate without defects. When parameterizing the conventional chemical properties of solvents, the boiling points and surface tension were found to be critical in determining the quality of the transferred graphene. During the formation step of a conformal PS film on a graphene surface before catalyst etching, a solvent with a boiling point over ∼140°C was essential. During the following PS film removal step, a solvent with surface tension higher than approximately 29dyn/cm led to the formation of a continuous graphene film without cracks and holes. In addition, a high spin-coating velocity and lower concentration of PS in the solvent enhanced the quality of a transferred graphene film. The UV treatment of Si/SiO2 (100nm) was also found to improve the adhesion of the graphene on substrates. By electrical characterization, morphological differences were found to affect the electrical properties markedly.</description><identifier>ISSN: 0008-6223</identifier><identifier>EISSN: 1873-3891</identifier><identifier>DOI: 10.1016/j.carbon.2013.08.010</identifier><identifier>CODEN: CRBNAH</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>Boiling points ; Catalysts ; Chemistry ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Fullerenes and related materials; diamonds, graphite ; General and physical chemistry ; Graphene ; Integrity ; Materials science ; Physics ; Polystyrene resins ; Silicon substrates ; Solvents ; Specific materials ; Surface physical chemistry ; Surface tension</subject><ispartof>Carbon (New York), 2013-12, Vol.65, p.165-174</ispartof><rights>2013 Elsevier Ltd</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c402t-6fd4faf40a9f9ae0d27a13f45c558775e66292bd640a55a23716f9672e2491de3</citedby><cites>FETCH-LOGICAL-c402t-6fd4faf40a9f9ae0d27a13f45c558775e66292bd640a55a23716f9672e2491de3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.carbon.2013.08.010$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>315,782,786,3552,27931,27932,46002</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27816201$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Un Jeong</creatorcontrib><creatorcontrib>Hur, Jaehyun</creatorcontrib><creatorcontrib>Cheon, Sangmo</creatorcontrib><creatorcontrib>Chung, Dae-Young</creatorcontrib><creatorcontrib>Son, Hyungbin</creatorcontrib><creatorcontrib>Park, Yeonsang</creatorcontrib><creatorcontrib>Roh, Young-Geun</creatorcontrib><creatorcontrib>Kim, Jineun</creatorcontrib><creatorcontrib>Lee, Jaesoong</creatorcontrib><creatorcontrib>Kim, Sang Won</creatorcontrib><creatorcontrib>Im, Kyuhyun</creatorcontrib><creatorcontrib>Park, Nokyoung</creatorcontrib><creatorcontrib>Kim, Juhun</creatorcontrib><creatorcontrib>Hwang, Sungwoo</creatorcontrib><creatorcontrib>Park, Wanjun</creatorcontrib><creatorcontrib>Lee, Chang-Won</creatorcontrib><title>Enhancement of integrity of graphene transferred by interface energy modulation</title><title>Carbon (New York)</title><description>We report on the systematic studies of the parameters governing the integrity of graphene film during general “wet” transfer from a thermodynamic point of view. We chose polystyrene (PS) as a test carrier material and attempted to use eight different solvents to find optimal conditions for the graphene transfer from a catalyst film to a desired substrate without defects. When parameterizing the conventional chemical properties of solvents, the boiling points and surface tension were found to be critical in determining the quality of the transferred graphene. During the formation step of a conformal PS film on a graphene surface before catalyst etching, a solvent with a boiling point over ∼140°C was essential. During the following PS film removal step, a solvent with surface tension higher than approximately 29dyn/cm led to the formation of a continuous graphene film without cracks and holes. In addition, a high spin-coating velocity and lower concentration of PS in the solvent enhanced the quality of a transferred graphene film. The UV treatment of Si/SiO2 (100nm) was also found to improve the adhesion of the graphene on substrates. By electrical characterization, morphological differences were found to affect the electrical properties markedly.</description><subject>Boiling points</subject><subject>Catalysts</subject><subject>Chemistry</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Fullerenes and related materials; diamonds, graphite</subject><subject>General and physical chemistry</subject><subject>Graphene</subject><subject>Integrity</subject><subject>Materials science</subject><subject>Physics</subject><subject>Polystyrene resins</subject><subject>Silicon substrates</subject><subject>Solvents</subject><subject>Specific materials</subject><subject>Surface physical chemistry</subject><subject>Surface tension</subject><issn>0008-6223</issn><issn>1873-3891</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEQhoMoWKv_wMNeBC-7ZrJJNnsRRPwCwYueQ5qdtCnbbE22Qv-9qS0e9TS8zPPOwEPIJdAKKMibZWVNnA2hYhTqiqqKAj0iE1BNXdaqhWMyoZSqUjJWn5KzlJY5cgV8Qt4ewsIEiysMYzG4wocR59GP212YR7NeYMBijCYkhzFiV8y2P1B0xmKRl3G-LVZDt-nN6IdwTk6c6RNeHOaUfDw-vN8_l69vTy_3d6-l5ZSNpXQdd8ZxalrXGqQdawzUjgsrhGoagVKyls06mQkhDKsbkK6VDUPGW-iwnpLr_d11HD43mEa98sli35uAwyZpEFBzLgDk_yhvhJDZj8oo36M2DilFdHod_crErQaqd6r1Uu9V651qTZXOqnPt6vDBJGt6l21Zn367rFEgd_yU3O45zGa-PEadrMdsv_MR7ai7wf_96BvuIJXd</recordid><startdate>20131201</startdate><enddate>20131201</enddate><creator>Kim, Un Jeong</creator><creator>Hur, Jaehyun</creator><creator>Cheon, Sangmo</creator><creator>Chung, Dae-Young</creator><creator>Son, Hyungbin</creator><creator>Park, Yeonsang</creator><creator>Roh, Young-Geun</creator><creator>Kim, Jineun</creator><creator>Lee, Jaesoong</creator><creator>Kim, Sang Won</creator><creator>Im, Kyuhyun</creator><creator>Park, Nokyoung</creator><creator>Kim, Juhun</creator><creator>Hwang, Sungwoo</creator><creator>Park, Wanjun</creator><creator>Lee, Chang-Won</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20131201</creationdate><title>Enhancement of integrity of graphene transferred by interface energy modulation</title><author>Kim, Un Jeong ; Hur, Jaehyun ; Cheon, Sangmo ; Chung, Dae-Young ; Son, Hyungbin ; Park, Yeonsang ; Roh, Young-Geun ; Kim, Jineun ; Lee, Jaesoong ; Kim, Sang Won ; Im, Kyuhyun ; Park, Nokyoung ; Kim, Juhun ; Hwang, Sungwoo ; Park, Wanjun ; Lee, Chang-Won</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c402t-6fd4faf40a9f9ae0d27a13f45c558775e66292bd640a55a23716f9672e2491de3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Boiling points</topic><topic>Catalysts</topic><topic>Chemistry</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Fullerenes and related materials; diamonds, graphite</topic><topic>General and physical chemistry</topic><topic>Graphene</topic><topic>Integrity</topic><topic>Materials science</topic><topic>Physics</topic><topic>Polystyrene resins</topic><topic>Silicon substrates</topic><topic>Solvents</topic><topic>Specific materials</topic><topic>Surface physical chemistry</topic><topic>Surface tension</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Un Jeong</creatorcontrib><creatorcontrib>Hur, Jaehyun</creatorcontrib><creatorcontrib>Cheon, Sangmo</creatorcontrib><creatorcontrib>Chung, Dae-Young</creatorcontrib><creatorcontrib>Son, Hyungbin</creatorcontrib><creatorcontrib>Park, Yeonsang</creatorcontrib><creatorcontrib>Roh, Young-Geun</creatorcontrib><creatorcontrib>Kim, Jineun</creatorcontrib><creatorcontrib>Lee, Jaesoong</creatorcontrib><creatorcontrib>Kim, Sang Won</creatorcontrib><creatorcontrib>Im, Kyuhyun</creatorcontrib><creatorcontrib>Park, Nokyoung</creatorcontrib><creatorcontrib>Kim, Juhun</creatorcontrib><creatorcontrib>Hwang, Sungwoo</creatorcontrib><creatorcontrib>Park, Wanjun</creatorcontrib><creatorcontrib>Lee, Chang-Won</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Carbon (New York)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Un Jeong</au><au>Hur, Jaehyun</au><au>Cheon, Sangmo</au><au>Chung, Dae-Young</au><au>Son, Hyungbin</au><au>Park, Yeonsang</au><au>Roh, Young-Geun</au><au>Kim, Jineun</au><au>Lee, Jaesoong</au><au>Kim, Sang Won</au><au>Im, Kyuhyun</au><au>Park, Nokyoung</au><au>Kim, Juhun</au><au>Hwang, Sungwoo</au><au>Park, Wanjun</au><au>Lee, Chang-Won</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancement of integrity of graphene transferred by interface energy modulation</atitle><jtitle>Carbon (New York)</jtitle><date>2013-12-01</date><risdate>2013</risdate><volume>65</volume><spage>165</spage><epage>174</epage><pages>165-174</pages><issn>0008-6223</issn><eissn>1873-3891</eissn><coden>CRBNAH</coden><abstract>We report on the systematic studies of the parameters governing the integrity of graphene film during general “wet” transfer from a thermodynamic point of view. We chose polystyrene (PS) as a test carrier material and attempted to use eight different solvents to find optimal conditions for the graphene transfer from a catalyst film to a desired substrate without defects. When parameterizing the conventional chemical properties of solvents, the boiling points and surface tension were found to be critical in determining the quality of the transferred graphene. During the formation step of a conformal PS film on a graphene surface before catalyst etching, a solvent with a boiling point over ∼140°C was essential. During the following PS film removal step, a solvent with surface tension higher than approximately 29dyn/cm led to the formation of a continuous graphene film without cracks and holes. In addition, a high spin-coating velocity and lower concentration of PS in the solvent enhanced the quality of a transferred graphene film. The UV treatment of Si/SiO2 (100nm) was also found to improve the adhesion of the graphene on substrates. 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| subjects | Boiling points Catalysts Chemistry Cross-disciplinary physics: materials science rheology Exact sciences and technology Fullerenes and related materials diamonds, graphite General and physical chemistry Graphene Integrity Materials science Physics Polystyrene resins Silicon substrates Solvents Specific materials Surface physical chemistry Surface tension |
| title | Enhancement of integrity of graphene transferred by interface energy modulation |
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