In-situ monitoring and control of hydrogenated amorphous siliconagermanium band-gap profiling during plasma deposition process

In-situ germanium content monitoring and its characteristics in SiH4/GeH4/H2 plasmas was studied during hydrogenated amorphous siliconagermanium (a-SiGe:H) film depositions. Since an appropriate band-gap profiling in a-SiGe:H deposition is very important to achieve high efficiency solar cell, the ac...

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Veröffentlicht in:	Current applied physics 2013-09, Vol.13 (7), p.1502-1505
Hauptverfasser:	Moon, Se, You, D J, Lee, SE, Lee, Heonmin
Format:	Artikel
Sprache:	eng
Schlagworte:	Deposition Electron temperature Gas flow Germanium Monitoring Plasma (physics) Profiling Silicon
Online-Zugang:	Volltext
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