Irradiation Effects of High-Energy Proton Beams on MoS2 Field Effect Transistors

Irradiation Effects of High-Energy Proton Beams on MoS2 Field Effect Transistors

We investigated the effect of irradiation on molybdenum disulfide (MoS2) field effect transistors with 10 MeV high-energy proton beams. The electrical characteristics of the devices were measured before and after proton irradiation with fluence conditions of 1012, 1013, and 1014 cm–2. For a low prot...

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Veröffentlicht in:ACS nano 2014-03, Vol.8 (3), p.2774-2781
Hauptverfasser: Kim, Tae-Young, Cho, Kyungjune, Park, Woanseo, Park, Juhun, Song, Younggul, Hong, Seunghun, Hong, Woong-Ki, Lee, Takhee
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container_issue 3
container_start_page 2774
container_title ACS nano
container_volume 8
creator Kim, Tae-Young
Cho, Kyungjune
Park, Woanseo
Park, Juhun
Song, Younggul
Hong, Seunghun
Hong, Woong-Ki
Lee, Takhee
description We investigated the effect of irradiation on molybdenum disulfide (MoS2) field effect transistors with 10 MeV high-energy proton beams. The electrical characteristics of the devices were measured before and after proton irradiation with fluence conditions of 1012, 1013, and 1014 cm–2. For a low proton beam fluence condition of 1012 cm–2, the electrical properties of the devices were nearly unchanged in response to proton irradiation. In contrast, for proton beam fluence conditions of 1013 or 1014 cm–2, the current level and conductance of the devices significantly decreased following proton irradiation. The electrical changes originated from proton-irradiation-induced traps, including positive oxide-charge traps in the SiO2 layer and trap states at the interface between the MoS2 channel and the SiO2 layer. Our study will enhance the understanding of the influence of high-energy particles on MoS2-based nanoelectronic devices.
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fullrecord <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_proquest_miscellaneous_1510401096</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1510401096</sourcerecordid><originalsourceid>FETCH-LOGICAL-a241t-4caca18e91b5858ac740d836aa9577e4fc539e6d3508763c7457c82d1d360753</originalsourceid><addsrcrecordid>eNo9kM1OAjEURhujEUQXvoCZjYmb0Xb6N10qASHBSCILd03pdLBkpsV2ZsHbUwOyujf5zr35cgC4R_AZwQK9OEcgI6IgF2CIBGY5LNn35XmnaABuYtxCSHnJ2TUYFIRSUWA4BMt5CKqyqrPeZZO6NrqLma-zmd385BNnwmafLYPvUvpmVJsyl334ryKbWtNUp4tsFZSLNnY-xFtwVasmmrvTHIHVdLIaz_LF5_t8_LrIVUFQlxOttEKlEWhNS1oqzQmsSsyUEpRzQ2pNsTCswhSmyjjFlOuyqFCFGeQUj8DT8e0u-N_exE62NmrTNMoZ30eJKIIEIihYQh9OaL9uTSV3wbYq7OW_hAQ8HgGlo9z6PrhUXCIo_-TKs1x8AGuzZys</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1510401096</pqid></control><display><type>article</type><title>Irradiation Effects of High-Energy Proton Beams on MoS2 Field Effect Transistors</title><source>American Chemical Society Journals</source><creator>Kim, Tae-Young ; Cho, Kyungjune ; Park, Woanseo ; Park, Juhun ; Song, Younggul ; Hong, Seunghun ; Hong, Woong-Ki ; Lee, Takhee</creator><creatorcontrib>Kim, Tae-Young ; Cho, Kyungjune ; Park, Woanseo ; Park, Juhun ; Song, Younggul ; Hong, Seunghun ; Hong, Woong-Ki ; Lee, Takhee</creatorcontrib><description>We investigated the effect of irradiation on molybdenum disulfide (MoS2) field effect transistors with 10 MeV high-energy proton beams. The electrical characteristics of the devices were measured before and after proton irradiation with fluence conditions of 1012, 1013, and 1014 cm–2. For a low proton beam fluence condition of 1012 cm–2, the electrical properties of the devices were nearly unchanged in response to proton irradiation. In contrast, for proton beam fluence conditions of 1013 or 1014 cm–2, the current level and conductance of the devices significantly decreased following proton irradiation. The electrical changes originated from proton-irradiation-induced traps, including positive oxide-charge traps in the SiO2 layer and trap states at the interface between the MoS2 channel and the SiO2 layer. Our study will enhance the understanding of the influence of high-energy particles on MoS2-based nanoelectronic devices.</description><identifier>ISSN: 1936-0851</identifier><identifier>EISSN: 1936-086X</identifier><identifier>DOI: 10.1021/nn4064924</identifier><identifier>PMID: 24559230</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><ispartof>ACS nano, 2014-03, Vol.8 (3), p.2774-2781</ispartof><rights>Copyright © 2014 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nn4064924$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nn4064924$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/24559230$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Tae-Young</creatorcontrib><creatorcontrib>Cho, Kyungjune</creatorcontrib><creatorcontrib>Park, Woanseo</creatorcontrib><creatorcontrib>Park, Juhun</creatorcontrib><creatorcontrib>Song, Younggul</creatorcontrib><creatorcontrib>Hong, Seunghun</creatorcontrib><creatorcontrib>Hong, Woong-Ki</creatorcontrib><creatorcontrib>Lee, Takhee</creatorcontrib><title>Irradiation Effects of High-Energy Proton Beams on MoS2 Field Effect Transistors</title><title>ACS nano</title><addtitle>ACS Nano</addtitle><description>We investigated the effect of irradiation on molybdenum disulfide (MoS2) field effect transistors with 10 MeV high-energy proton beams. The electrical characteristics of the devices were measured before and after proton irradiation with fluence conditions of 1012, 1013, and 1014 cm–2. For a low proton beam fluence condition of 1012 cm–2, the electrical properties of the devices were nearly unchanged in response to proton irradiation. In contrast, for proton beam fluence conditions of 1013 or 1014 cm–2, the current level and conductance of the devices significantly decreased following proton irradiation. The electrical changes originated from proton-irradiation-induced traps, including positive oxide-charge traps in the SiO2 layer and trap states at the interface between the MoS2 channel and the SiO2 layer. Our study will enhance the understanding of the influence of high-energy particles on MoS2-based nanoelectronic devices.</description><issn>1936-0851</issn><issn>1936-086X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNo9kM1OAjEURhujEUQXvoCZjYmb0Xb6N10qASHBSCILd03pdLBkpsV2ZsHbUwOyujf5zr35cgC4R_AZwQK9OEcgI6IgF2CIBGY5LNn35XmnaABuYtxCSHnJ2TUYFIRSUWA4BMt5CKqyqrPeZZO6NrqLma-zmd385BNnwmafLYPvUvpmVJsyl334ryKbWtNUp4tsFZSLNnY-xFtwVasmmrvTHIHVdLIaz_LF5_t8_LrIVUFQlxOttEKlEWhNS1oqzQmsSsyUEpRzQ2pNsTCswhSmyjjFlOuyqFCFGeQUj8DT8e0u-N_exE62NmrTNMoZ30eJKIIEIihYQh9OaL9uTSV3wbYq7OW_hAQ8HgGlo9z6PrhUXCIo_-TKs1x8AGuzZys</recordid><startdate>20140325</startdate><enddate>20140325</enddate><creator>Kim, Tae-Young</creator><creator>Cho, Kyungjune</creator><creator>Park, Woanseo</creator><creator>Park, Juhun</creator><creator>Song, Younggul</creator><creator>Hong, Seunghun</creator><creator>Hong, Woong-Ki</creator><creator>Lee, Takhee</creator><general>American Chemical Society</general><scope>NPM</scope><scope>7X8</scope></search><sort><creationdate>20140325</creationdate><title>Irradiation Effects of High-Energy Proton Beams on MoS2 Field Effect Transistors</title><author>Kim, Tae-Young ; Cho, Kyungjune ; Park, Woanseo ; Park, Juhun ; Song, Younggul ; Hong, Seunghun ; Hong, Woong-Ki ; Lee, Takhee</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a241t-4caca18e91b5858ac740d836aa9577e4fc539e6d3508763c7457c82d1d360753</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Tae-Young</creatorcontrib><creatorcontrib>Cho, Kyungjune</creatorcontrib><creatorcontrib>Park, Woanseo</creatorcontrib><creatorcontrib>Park, Juhun</creatorcontrib><creatorcontrib>Song, Younggul</creatorcontrib><creatorcontrib>Hong, Seunghun</creatorcontrib><creatorcontrib>Hong, Woong-Ki</creatorcontrib><creatorcontrib>Lee, Takhee</creatorcontrib><collection>PubMed</collection><collection>MEDLINE - Academic</collection><jtitle>ACS nano</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Tae-Young</au><au>Cho, Kyungjune</au><au>Park, Woanseo</au><au>Park, Juhun</au><au>Song, Younggul</au><au>Hong, Seunghun</au><au>Hong, Woong-Ki</au><au>Lee, Takhee</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Irradiation Effects of High-Energy Proton Beams on MoS2 Field Effect Transistors</atitle><jtitle>ACS nano</jtitle><addtitle>ACS Nano</addtitle><date>2014-03-25</date><risdate>2014</risdate><volume>8</volume><issue>3</issue><spage>2774</spage><epage>2781</epage><pages>2774-2781</pages><issn>1936-0851</issn><eissn>1936-086X</eissn><abstract>We investigated the effect of irradiation on molybdenum disulfide (MoS2) field effect transistors with 10 MeV high-energy proton beams. The electrical characteristics of the devices were measured before and after proton irradiation with fluence conditions of 1012, 1013, and 1014 cm–2. For a low proton beam fluence condition of 1012 cm–2, the electrical properties of the devices were nearly unchanged in response to proton irradiation. In contrast, for proton beam fluence conditions of 1013 or 1014 cm–2, the current level and conductance of the devices significantly decreased following proton irradiation. The electrical changes originated from proton-irradiation-induced traps, including positive oxide-charge traps in the SiO2 layer and trap states at the interface between the MoS2 channel and the SiO2 layer. Our study will enhance the understanding of the influence of high-energy particles on MoS2-based nanoelectronic devices.</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>24559230</pmid><doi>10.1021/nn4064924</doi><tpages>8</tpages></addata></record>
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title Irradiation Effects of High-Energy Proton Beams on MoS2 Field Effect Transistors
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T09%3A38%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Irradiation%20Effects%20of%20High-Energy%20Proton%20Beams%20on%20MoS2%20Field%20Effect%20Transistors&rft.jtitle=ACS%20nano&rft.au=Kim,%20Tae-Young&rft.date=2014-03-25&rft.volume=8&rft.issue=3&rft.spage=2774&rft.epage=2781&rft.pages=2774-2781&rft.issn=1936-0851&rft.eissn=1936-086X&rft_id=info:doi/10.1021/nn4064924&rft_dat=%3Cproquest_pubme%3E1510401096%3C/proquest_pubme%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1510401096&rft_id=info:pmid/24559230&rfr_iscdi=true