Application, modeling and limitations of Y-function based methods for massive series resistance in nanoscale SOI MOSFETs

•Electrical characteristics of UTB (46nm) and NSD (1.6nm) SOI-MOSFETs are compared.•Initial SOI channel is thinned down to 1.6nm using a recessed-gate process.•Drain current values were found surprisingly different by 3 orders of magnitude.•Two Y-function-based extraction methods of series resistanc...

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Veröffentlicht in:	Solid-state electronics 2014-02, Vol.92, p.12-19
Hauptverfasser:	Karsenty, A., Chelly, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical model Applied sciences Channels Devices Drains Electric potential Electronics Exact sciences and technology I–V characteristics Molecular electronics, nanoelectronics Nano-Scaled Body devices Nanocomposites Nanomaterials Nanostructure Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Series resistance SOI MOSFET Transistors Ultra-Thin Body devices Voltage
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