Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6 Amm/h

Plasma-assisted molecular beam epitaxial (PAMBE) growth of gallium nitride (GaN) was explored with a novel modification of a commercially available nitrogen plasma source. The modified nitrogen plasma source enabled a dramatic increase in the flux of active nitrogen and thus a significantly higher g...

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Veröffentlicht in:	Journal of crystal growth 2014-01, Vol.386, p.168-174
Hauptverfasser:	McSkimming, Brian, Wu, F, Huault, Thomas, Chaix, Catherine, Speck, James
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystal growth
Online-Zugang:	Volltext
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