In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)
The molecular-beam epitaxial growth processes of GaAs on Si(001) were investigated using in situ synchrotron X-ray diffraction. Three-dimensional X-ray intensity distributions around the Si and GaAs 022 Bragg points in reciprocal space were measured during growth using combination of an area detecto...
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| Veröffentlicht in: | Journal of crystal growth 2013-09, Vol.378, p.34-36 |
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| creator | Takahasi, M. Nakata, Y. Suzuki, H. Ikeda, K. Kozu, M. Hu, W. Ohshita, Y. |
| description | The molecular-beam epitaxial growth processes of GaAs on Si(001) were investigated using in situ synchrotron X-ray diffraction. Three-dimensional X-ray intensity distributions around the Si and GaAs 022 Bragg points in reciprocal space were measured during growth using combination of an area detector and one-axis scans. During the initial stage of growth, the average radius of GaAs islands was found to follow a second power law function of the growth time, in accordance with the growth being limited by the binding of Ga with As at step edges. With increasing GaAs thickness, streaky scattering extending from the GaAs 022 peak in the 〈111〉 directions was observed, indicating the development of plane defects.
► The GaAs growth on Si(001) was studied using in situ synchrotron X-ray diffraction. ► Three-dimensional X-ray reciprocal space mappings were provided. ► The power law followed by the time evolution of the GaAs island size was determined. ► The development of plane defects was shown by X-ray diffuse scattering. |
| doi_str_mv | 10.1016/j.jcrysgro.2012.12.119 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1506402663</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024812010044</els_id><sourcerecordid>1464549818</sourcerecordid><originalsourceid>FETCH-LOGICAL-c474t-eead7e3daa5887de377727b0f38c73a2c1b88c07cb96a76e549f97216e13cb173</originalsourceid><addsrcrecordid>eNqFkM1LJDEQxYPsgrOu_4LkIuihx3z0JOmbIq4Kggd3QfAQatLVmqG_TPXIzn-_mR31KhRVl_dePX6MHUkxl0Kas9V8FdKGntMwV0Kq-XZktcdm0lldLIRQ39gsb1UIVbp99oNoJUR2SjFjT7c9pzit-fSSEIs6dthTHHpo-WORYMMThjimIUBb0AgBeQfjGPtnPjT8Gi6I4xgn-BuzoYltR3zo-UM8yfmnP9n3BlrCw_d7wP78uvp9eVPc3V_fXl7cFaG05VQgQm1R1wAL52yN2lqr7FI02gWrQQW5dC4IG5aVAWtwUVZNZZU0KHVYSqsP2MkuN_d8XSNNvosUsG2hx2FNXi6EKYUyRn8tLU2Z8510WWp20pAGooSNH1PsIG28FH4L3q_8B3i_Be-3I6tsPH7_AZSxNQn6EOnTrayxQv_vcr7TYWbzFjF5ChH7gHXM0CdfD_GrV_8A8MCbkw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1464549818</pqid></control><display><type>article</type><title>In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Takahasi, M. ; Nakata, Y. ; Suzuki, H. ; Ikeda, K. ; Kozu, M. ; Hu, W. ; Ohshita, Y.</creator><creatorcontrib>Takahasi, M. ; Nakata, Y. ; Suzuki, H. ; Ikeda, K. ; Kozu, M. ; Hu, W. ; Ohshita, Y.</creatorcontrib><description>The molecular-beam epitaxial growth processes of GaAs on Si(001) were investigated using in situ synchrotron X-ray diffraction. Three-dimensional X-ray intensity distributions around the Si and GaAs 022 Bragg points in reciprocal space were measured during growth using combination of an area detector and one-axis scans. During the initial stage of growth, the average radius of GaAs islands was found to follow a second power law function of the growth time, in accordance with the growth being limited by the binding of Ga with As at step edges. With increasing GaAs thickness, streaky scattering extending from the GaAs 022 peak in the 〈111〉 directions was observed, indicating the development of plane defects.
► The GaAs growth on Si(001) was studied using in situ synchrotron X-ray diffraction. ► Three-dimensional X-ray reciprocal space mappings were provided. ► The power law followed by the time evolution of the GaAs island size was determined. ► The development of plane defects was shown by X-ray diffuse scattering.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2012.12.119</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Nucleation ; A1. Planar defects ; A1. X-ray diffraction ; A3. Molecular beam epitaxy ; B2. Semiconducting gallium arsenide ; B2. Semiconducting silicon ; Binding ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Crystal defects ; Detectors ; Diffraction ; Equations of state, phase equilibria, and phase transitions ; Exact sciences and technology ; Gallium arsenide ; Gallium arsenides ; General studies of phase transitions ; Materials science ; Methods of crystal growth; physics of crystal growth ; Methods of deposition of films and coatings; film growth and epitaxy ; Molecular, atomic, ion, and chemical beam epitaxy ; Nucleation ; Physics ; Structure of solids and liquids; crystallography ; Structure of specific crystalline solids ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation ; Three dimensional ; X-rays</subject><ispartof>Journal of crystal growth, 2013-09, Vol.378, p.34-36</ispartof><rights>2013 Elsevier B.V.</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c474t-eead7e3daa5887de377727b0f38c73a2c1b88c07cb96a76e549f97216e13cb173</citedby><cites>FETCH-LOGICAL-c474t-eead7e3daa5887de377727b0f38c73a2c1b88c07cb96a76e549f97216e13cb173</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2012.12.119$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27670363$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Takahasi, M.</creatorcontrib><creatorcontrib>Nakata, Y.</creatorcontrib><creatorcontrib>Suzuki, H.</creatorcontrib><creatorcontrib>Ikeda, K.</creatorcontrib><creatorcontrib>Kozu, M.</creatorcontrib><creatorcontrib>Hu, W.</creatorcontrib><creatorcontrib>Ohshita, Y.</creatorcontrib><title>In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)</title><title>Journal of crystal growth</title><description>The molecular-beam epitaxial growth processes of GaAs on Si(001) were investigated using in situ synchrotron X-ray diffraction. Three-dimensional X-ray intensity distributions around the Si and GaAs 022 Bragg points in reciprocal space were measured during growth using combination of an area detector and one-axis scans. During the initial stage of growth, the average radius of GaAs islands was found to follow a second power law function of the growth time, in accordance with the growth being limited by the binding of Ga with As at step edges. With increasing GaAs thickness, streaky scattering extending from the GaAs 022 peak in the 〈111〉 directions was observed, indicating the development of plane defects.
► The GaAs growth on Si(001) was studied using in situ synchrotron X-ray diffraction. ► Three-dimensional X-ray reciprocal space mappings were provided. ► The power law followed by the time evolution of the GaAs island size was determined. ► The development of plane defects was shown by X-ray diffuse scattering.</description><subject>A1. Nucleation</subject><subject>A1. Planar defects</subject><subject>A1. X-ray diffraction</subject><subject>A3. Molecular beam epitaxy</subject><subject>B2. Semiconducting gallium arsenide</subject><subject>B2. Semiconducting silicon</subject><subject>Binding</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystal defects</subject><subject>Detectors</subject><subject>Diffraction</subject><subject>Equations of state, phase equilibria, and phase transitions</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>General studies of phase transitions</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Molecular, atomic, ion, and chemical beam epitaxy</subject><subject>Nucleation</subject><subject>Physics</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Structure of specific crystalline solids</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><subject>Three dimensional</subject><subject>X-rays</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkM1LJDEQxYPsgrOu_4LkIuihx3z0JOmbIq4Kggd3QfAQatLVmqG_TPXIzn-_mR31KhRVl_dePX6MHUkxl0Kas9V8FdKGntMwV0Kq-XZktcdm0lldLIRQ39gsb1UIVbp99oNoJUR2SjFjT7c9pzit-fSSEIs6dthTHHpo-WORYMMThjimIUBb0AgBeQfjGPtnPjT8Gi6I4xgn-BuzoYltR3zo-UM8yfmnP9n3BlrCw_d7wP78uvp9eVPc3V_fXl7cFaG05VQgQm1R1wAL52yN2lqr7FI02gWrQQW5dC4IG5aVAWtwUVZNZZU0KHVYSqsP2MkuN_d8XSNNvosUsG2hx2FNXi6EKYUyRn8tLU2Z8510WWp20pAGooSNH1PsIG28FH4L3q_8B3i_Be-3I6tsPH7_AZSxNQn6EOnTrayxQv_vcr7TYWbzFjF5ChH7gHXM0CdfD_GrV_8A8MCbkw</recordid><startdate>20130901</startdate><enddate>20130901</enddate><creator>Takahasi, M.</creator><creator>Nakata, Y.</creator><creator>Suzuki, H.</creator><creator>Ikeda, K.</creator><creator>Kozu, M.</creator><creator>Hu, W.</creator><creator>Ohshita, Y.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130901</creationdate><title>In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)</title><author>Takahasi, M. ; Nakata, Y. ; Suzuki, H. ; Ikeda, K. ; Kozu, M. ; Hu, W. ; Ohshita, Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c474t-eead7e3daa5887de377727b0f38c73a2c1b88c07cb96a76e549f97216e13cb173</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>A1. Nucleation</topic><topic>A1. Planar defects</topic><topic>A1. X-ray diffraction</topic><topic>A3. Molecular beam epitaxy</topic><topic>B2. Semiconducting gallium arsenide</topic><topic>B2. Semiconducting silicon</topic><topic>Binding</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystal defects</topic><topic>Detectors</topic><topic>Diffraction</topic><topic>Equations of state, phase equilibria, and phase transitions</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>General studies of phase transitions</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Molecular, atomic, ion, and chemical beam epitaxy</topic><topic>Nucleation</topic><topic>Physics</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Structure of specific crystalline solids</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><topic>Three dimensional</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Takahasi, M.</creatorcontrib><creatorcontrib>Nakata, Y.</creatorcontrib><creatorcontrib>Suzuki, H.</creatorcontrib><creatorcontrib>Ikeda, K.</creatorcontrib><creatorcontrib>Kozu, M.</creatorcontrib><creatorcontrib>Hu, W.</creatorcontrib><creatorcontrib>Ohshita, Y.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Takahasi, M.</au><au>Nakata, Y.</au><au>Suzuki, H.</au><au>Ikeda, K.</au><au>Kozu, M.</au><au>Hu, W.</au><au>Ohshita, Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)</atitle><jtitle>Journal of crystal growth</jtitle><date>2013-09-01</date><risdate>2013</risdate><volume>378</volume><spage>34</spage><epage>36</epage><pages>34-36</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>The molecular-beam epitaxial growth processes of GaAs on Si(001) were investigated using in situ synchrotron X-ray diffraction. Three-dimensional X-ray intensity distributions around the Si and GaAs 022 Bragg points in reciprocal space were measured during growth using combination of an area detector and one-axis scans. During the initial stage of growth, the average radius of GaAs islands was found to follow a second power law function of the growth time, in accordance with the growth being limited by the binding of Ga with As at step edges. With increasing GaAs thickness, streaky scattering extending from the GaAs 022 peak in the 〈111〉 directions was observed, indicating the development of plane defects.
► The GaAs growth on Si(001) was studied using in situ synchrotron X-ray diffraction. ► Three-dimensional X-ray reciprocal space mappings were provided. ► The power law followed by the time evolution of the GaAs island size was determined. ► The development of plane defects was shown by X-ray diffuse scattering.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2012.12.119</doi><tpages>3</tpages></addata></record> |
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| subjects | A1. Nucleation A1. Planar defects A1. X-ray diffraction A3. Molecular beam epitaxy B2. Semiconducting gallium arsenide B2. Semiconducting silicon Binding Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystal defects Detectors Diffraction Equations of state, phase equilibria, and phase transitions Exact sciences and technology Gallium arsenide Gallium arsenides General studies of phase transitions Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Nucleation Physics Structure of solids and liquids crystallography Structure of specific crystalline solids Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation Three dimensional X-rays |
| title | In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001) |
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