Threading edge dislocation arrays in epitaxial GaN: Formation, model and thermodynamics

The arrays of edge threading dislocations (TD) have been observed in highly dislocated GaN film grown on Al2O3(0001) substrate. There are three kinds of arrays including straight-row, partial-circle and full-circle arrays. A theoretical model derived from the thermodynamics of grains evolution durin...

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Veröffentlicht in:	Journal of crystal growth 2014-02, Vol.387, p.48-51
Hauptverfasser:	Chen, Zi-Min, Zheng, Zhi-Yuan, Chen, Ying-Da, Wu, Hua-Long, Tong, Cun-Sheng, Wang, Gang, Wu, Zhi-Sheng, Jiang, Hao
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Dislocation array A1. Thermodynamics A3. Metalorganic chemical vapor deposition Arrays B1. Nitride Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Exact sciences and technology Linear defects: dislocations, disclinations Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Structure of solids and liquids crystallography
Online-Zugang:	Volltext
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