Nd:YAG laser ablation characteristics of thin CIGS solar cell films
This work reports that the ablation characteristics of thin CuIn 1− x Ga x Se 2 (CIGS) solar cell film differ significantly with elemental composition and laser pulse energy. From in situ shadowgraphs measured during Nd:YAG laser (1,064 nm) irradiation of CIGS films and crater morphologies, it was f...
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| Veröffentlicht in: | Applied physics. B, Lasers and optics Lasers and optics, 2013-12, Vol.113 (3), p.403-409 |
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| container_title | Applied physics. B, Lasers and optics |
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| creator | Lee, S. H. Kim, C. K. In, J. H. Kim, D. S. Ham, H. J. Jeong, S. H. |
| description | This work reports that the ablation characteristics of thin CuIn
1−
x
Ga
x
Se
2
(CIGS) solar cell film differ significantly with elemental composition and laser pulse energy. From in situ shadowgraphs measured during Nd:YAG laser (1,064 nm) irradiation of CIGS films and crater morphologies, it was found that strong surface evaporation is dominant for low Ga concentration films of which band gap is well below the photon energy. As the band gap of CIGS film becomes close to or over the laser photon energy due to increased Ga content, surface absorption diminishes and at low laser energy, laser heating of the film plays an important role. It is demonstrated that for the CIGS films with Ga/(Ga + In) ratio being approximately over 0.2, the laser irradiation leads to solid phase removal of the film due to thermomechanical fracture at low laser energy but to ablative evaporation at elevated energy. |
| doi_str_mv | 10.1007/s00340-013-5477-3 |
| format | Article |
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1−
x
Ga
x
Se
2
(CIGS) solar cell film differ significantly with elemental composition and laser pulse energy. From in situ shadowgraphs measured during Nd:YAG laser (1,064 nm) irradiation of CIGS films and crater morphologies, it was found that strong surface evaporation is dominant for low Ga concentration films of which band gap is well below the photon energy. As the band gap of CIGS film becomes close to or over the laser photon energy due to increased Ga content, surface absorption diminishes and at low laser energy, laser heating of the film plays an important role. It is demonstrated that for the CIGS films with Ga/(Ga + In) ratio being approximately over 0.2, the laser irradiation leads to solid phase removal of the film due to thermomechanical fracture at low laser energy but to ablative evaporation at elevated energy.</description><identifier>ISSN: 0946-2171</identifier><identifier>EISSN: 1432-0649</identifier><identifier>DOI: 10.1007/s00340-013-5477-3</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>ABLATION ; Engineering ; Lasers ; Optical Devices ; Optics ; Photonics ; Physical Chemistry ; Physics ; Physics and Astronomy ; Quantum Optics</subject><ispartof>Applied physics. B, Lasers and optics, 2013-12, Vol.113 (3), p.403-409</ispartof><rights>Springer-Verlag Berlin Heidelberg 2013</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c387t-d242eeedead551195d9d4807c294bfe397e98859f7c16d6a48bdeb5bc881e0b43</citedby><cites>FETCH-LOGICAL-c387t-d242eeedead551195d9d4807c294bfe397e98859f7c16d6a48bdeb5bc881e0b43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00340-013-5477-3$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00340-013-5477-3$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,778,782,27911,27912,41475,42544,51306</link.rule.ids></links><search><creatorcontrib>Lee, S. H.</creatorcontrib><creatorcontrib>Kim, C. K.</creatorcontrib><creatorcontrib>In, J. H.</creatorcontrib><creatorcontrib>Kim, D. S.</creatorcontrib><creatorcontrib>Ham, H. J.</creatorcontrib><creatorcontrib>Jeong, S. H.</creatorcontrib><title>Nd:YAG laser ablation characteristics of thin CIGS solar cell films</title><title>Applied physics. B, Lasers and optics</title><addtitle>Appl. Phys. B</addtitle><description>This work reports that the ablation characteristics of thin CuIn
1−
x
Ga
x
Se
2
(CIGS) solar cell film differ significantly with elemental composition and laser pulse energy. From in situ shadowgraphs measured during Nd:YAG laser (1,064 nm) irradiation of CIGS films and crater morphologies, it was found that strong surface evaporation is dominant for low Ga concentration films of which band gap is well below the photon energy. As the band gap of CIGS film becomes close to or over the laser photon energy due to increased Ga content, surface absorption diminishes and at low laser energy, laser heating of the film plays an important role. It is demonstrated that for the CIGS films with Ga/(Ga + In) ratio being approximately over 0.2, the laser irradiation leads to solid phase removal of the film due to thermomechanical fracture at low laser energy but to ablative evaporation at elevated energy.</description><subject>ABLATION</subject><subject>Engineering</subject><subject>Lasers</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Photonics</subject><subject>Physical Chemistry</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum Optics</subject><issn>0946-2171</issn><issn>1432-0649</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kD1PwzAQhi0EEqXwA9g8shjs2IlttiqCUqmCARiYLMe-0FRpUnzpwL9vqjBzyy3Pex8PIbeC3wvO9QNyLhVnXEiWK62ZPCMzoWTGeKHsOZlxqwqWCS0uyRXilo9VGDMj5Wt8_FosaesREvVV64em72jY-OTDAKnBoQlI-5oOm6aj5Wr5TrFvfaIB2pbWTbvDa3JR-xbh5q_Pyefz00f5wtZvy1W5WLMgjR5YzFQGABF8zHMhbB5tVIbrkFlV1SCtBmtMbmsdRBELr0wVocqrYIwAXik5J3fT3H3qfw6Ag9s1eDrDd9Af0ImcF-MmZeyIigkNqUdMULt9anY-_TrB3UmYm4S5UZg7CXNyzGRTBke2-4bktv0hdeNH_4SOziZtFA</recordid><startdate>20131201</startdate><enddate>20131201</enddate><creator>Lee, S. H.</creator><creator>Kim, C. K.</creator><creator>In, J. H.</creator><creator>Kim, D. S.</creator><creator>Ham, H. J.</creator><creator>Jeong, S. H.</creator><general>Springer Berlin Heidelberg</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>H8G</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20131201</creationdate><title>Nd:YAG laser ablation characteristics of thin CIGS solar cell films</title><author>Lee, S. H. ; Kim, C. K. ; In, J. H. ; Kim, D. S. ; Ham, H. J. ; Jeong, S. H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c387t-d242eeedead551195d9d4807c294bfe397e98859f7c16d6a48bdeb5bc881e0b43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>ABLATION</topic><topic>Engineering</topic><topic>Lasers</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Photonics</topic><topic>Physical Chemistry</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum Optics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, S. H.</creatorcontrib><creatorcontrib>Kim, C. K.</creatorcontrib><creatorcontrib>In, J. H.</creatorcontrib><creatorcontrib>Kim, D. S.</creatorcontrib><creatorcontrib>Ham, H. J.</creatorcontrib><creatorcontrib>Jeong, S. H.</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Copper Technical Reference Library</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics. B, Lasers and optics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, S. H.</au><au>Kim, C. K.</au><au>In, J. H.</au><au>Kim, D. S.</au><au>Ham, H. J.</au><au>Jeong, S. H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Nd:YAG laser ablation characteristics of thin CIGS solar cell films</atitle><jtitle>Applied physics. B, Lasers and optics</jtitle><stitle>Appl. Phys. B</stitle><date>2013-12-01</date><risdate>2013</risdate><volume>113</volume><issue>3</issue><spage>403</spage><epage>409</epage><pages>403-409</pages><issn>0946-2171</issn><eissn>1432-0649</eissn><abstract>This work reports that the ablation characteristics of thin CuIn
1−
x
Ga
x
Se
2
(CIGS) solar cell film differ significantly with elemental composition and laser pulse energy. From in situ shadowgraphs measured during Nd:YAG laser (1,064 nm) irradiation of CIGS films and crater morphologies, it was found that strong surface evaporation is dominant for low Ga concentration films of which band gap is well below the photon energy. As the band gap of CIGS film becomes close to or over the laser photon energy due to increased Ga content, surface absorption diminishes and at low laser energy, laser heating of the film plays an important role. It is demonstrated that for the CIGS films with Ga/(Ga + In) ratio being approximately over 0.2, the laser irradiation leads to solid phase removal of the film due to thermomechanical fracture at low laser energy but to ablative evaporation at elevated energy.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00340-013-5477-3</doi><tpages>7</tpages></addata></record> |
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| ispartof | Applied physics. B, Lasers and optics, 2013-12, Vol.113 (3), p.403-409 |
| issn | 0946-2171 1432-0649 |
| language | eng |
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| source | Springer Nature - Complete Springer Journals |
| subjects | ABLATION Engineering Lasers Optical Devices Optics Photonics Physical Chemistry Physics Physics and Astronomy Quantum Optics |
| title | Nd:YAG laser ablation characteristics of thin CIGS solar cell films |
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