Effects of annealing treatment upon electrical and photoluminescence properties of phosphorus-doped ZnMgTe epilayers grown by metalorganic vapor phase epitaxy

Post-annealing treatment in nitrogen gas flow has been carried out for P-doped Zn1−xMgxTe layer grown under a Te-rich or Te-poor condition by metalorganic vapor phase epitaxy. The electrical and photoluminescence properties of P-doped Zn1−xMgxTe layers are altered by annealing treatment. The post-an...

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Veröffentlicht in:	Journal of crystal growth 2013-05, Vol.370, p.342-347
Hauptverfasser:	Nishio, Mitsuhiro, Kai, Keita, Fujiki, Ryota, Saito, Katsuhiko, Tanaka, Tooru, Guo, Qixin
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Doping A1. Metalorganic vapor phase epitaxy Annealing B2. Semiconducting II–VI materials B2. Semiconducting ternary compounds Compensation Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Crystal growth Exact sciences and technology Gas flow Luminescence Materials science Metalorganic vapor phase epitaxy Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Photoluminescence Physics Vapor phase epitaxy growth from vapor phase Zinc tellurides
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