Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots
We have grown new InAs/GaAs quantum dot (QD) structures with graded Sb concentration of GaAs(1−x)Sbx strain reducing layer (SRL). New types of GaAsSb SRLs with graded concentration of Sb are theoretically and experimentally studied. We compare properties of three different Sb concentration gradients...
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| Veröffentlicht in: | Journal of crystal growth 2013-05, Vol.370, p.303-306 |
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| creator | Hospodková, A. Zíková, M. Pangrác, J. Oswald, J. Kuldová, K. Vyskočil, J. Hulicius, E. |
| description | We have grown new InAs/GaAs quantum dot (QD) structures with graded Sb concentration of GaAs(1−x)Sbx strain reducing layer (SRL). New types of GaAsSb SRLs with graded concentration of Sb are theoretically and experimentally studied. We compare properties of three different Sb concentration gradients in SRL, constant, increasing and decreasing during the growth. Both types of non-constant gradients help us to prevent transition of the InAs(QD)/GaAsSb(SRL) heterojunction from type I to type II, to increase emission wavelength and to retain high luminescence intensity of these types of QD structures. Comparison of photoluminescence of samples with different concentration gradients and similar average Sb concentration in SRLs is shown. The longest wavelength of type I ground state transition was achieved on sample with decreasing gradation of Sb content in SRL—1399nm (0.886eV).
► We suggest new types of graded GaAsSb strain reducing layers covering InAs/GaAs QDs. ► The longest photoluminescence wavelength was achieved for decreasing Sb gradient in SRL. ► We achieved type I ground state transition at 1399nm, FWHM 35meV and intense RT PL. ► The experimental data were in agreement with theoretically expected behavior. |
| doi_str_mv | 10.1016/j.jcrysgro.2012.08.007 |
| format | Article |
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► We suggest new types of graded GaAsSb strain reducing layers covering InAs/GaAs QDs. ► The longest photoluminescence wavelength was achieved for decreasing Sb gradient in SRL. ► We achieved type I ground state transition at 1399nm, FWHM 35meV and intense RT PL. ► The experimental data were in agreement with theoretically expected behavior.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2012.08.007</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Band alignment ; A1. Photoluminescence ; A1. Quantum dot ; A1. Strain reducing layer ; A3. MOVPE ; Antimony ; B2. InAs/GaAs ; Concentration gradient ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Equations of state, phase equilibria, and phase transitions ; Exact sciences and technology ; Gallium arsenide ; Gallium arsenides ; Indium arsenides ; Materials science ; Methods of crystal growth; physics of crystal growth ; Nanoscale materials and structures: fabrication and characterization ; Other topics in nanoscale materials and structures ; Physics ; Quantum dots ; Solubility, segregation, and mixing; phase separation ; Strain ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation ; Wavelengths</subject><ispartof>Journal of crystal growth, 2013-05, Vol.370, p.303-306</ispartof><rights>2012 Elsevier B.V.</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c408t-a05784e2f8bf8848a6109b8ff63fca4ae4682c5ce616ff27c7ac5917cd12137c3</citedby><cites>FETCH-LOGICAL-c408t-a05784e2f8bf8848a6109b8ff63fca4ae4682c5ce616ff27c7ac5917cd12137c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2012.08.007$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,777,781,786,787,3537,23911,23912,25121,27905,27906,45976</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27398609$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hospodková, A.</creatorcontrib><creatorcontrib>Zíková, M.</creatorcontrib><creatorcontrib>Pangrác, J.</creatorcontrib><creatorcontrib>Oswald, J.</creatorcontrib><creatorcontrib>Kuldová, K.</creatorcontrib><creatorcontrib>Vyskočil, J.</creatorcontrib><creatorcontrib>Hulicius, E.</creatorcontrib><title>Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots</title><title>Journal of crystal growth</title><description>We have grown new InAs/GaAs quantum dot (QD) structures with graded Sb concentration of GaAs(1−x)Sbx strain reducing layer (SRL). New types of GaAsSb SRLs with graded concentration of Sb are theoretically and experimentally studied. We compare properties of three different Sb concentration gradients in SRL, constant, increasing and decreasing during the growth. Both types of non-constant gradients help us to prevent transition of the InAs(QD)/GaAsSb(SRL) heterojunction from type I to type II, to increase emission wavelength and to retain high luminescence intensity of these types of QD structures. Comparison of photoluminescence of samples with different concentration gradients and similar average Sb concentration in SRLs is shown. The longest wavelength of type I ground state transition was achieved on sample with decreasing gradation of Sb content in SRL—1399nm (0.886eV).
► We suggest new types of graded GaAsSb strain reducing layers covering InAs/GaAs QDs. ► The longest photoluminescence wavelength was achieved for decreasing Sb gradient in SRL. ► We achieved type I ground state transition at 1399nm, FWHM 35meV and intense RT PL. ► The experimental data were in agreement with theoretically expected behavior.</description><subject>A1. Band alignment</subject><subject>A1. Photoluminescence</subject><subject>A1. Quantum dot</subject><subject>A1. Strain reducing layer</subject><subject>A3. MOVPE</subject><subject>Antimony</subject><subject>B2. InAs/GaAs</subject><subject>Concentration gradient</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Equations of state, phase equilibria, and phase transitions</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Indium arsenides</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Other topics in nanoscale materials and structures</subject><subject>Physics</subject><subject>Quantum dots</subject><subject>Solubility, segregation, and mixing; phase separation</subject><subject>Strain</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><subject>Wavelengths</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkMFq3DAQhkVpoNtNX6H4UujFzkiWJe2tS5psAoEc2p6FdjwKWrx2orED-_a12bTXXGYY-P6Z4RPiq4RKgjRXh-qA-cRPeagUSFWBqwDsB7GSztZlA6A-itVcVQlKu0_iM_MBYE5KWImfuxxaaotd2PKvfcFjDqkvMrUTpv6p6MKJMhc4vFJe5vt-y1cLW7xMoR-nY9EOI1-Kixg6pi9vfS3-3N78vr4rHx5399fbhxI1uLEM0FinSUW3j85pF-YPNnsXo6kjBh1IG6ewQTLSxKgs2oDNRlpspZK1xXotvp_3PufhZSIe_TExUteFnoaJvWzA1E43oN9HtdGNtrJeUHNGMQ_MmaJ_zukY8slL8Ithf_D_DPvFsAfnZ8Nz8NvbjcAYuphDj4n_p5WtN87AZuZ-nDma3bwmyp4xUY_Upkw4-nZI7536C1eYlAc</recordid><startdate>20130501</startdate><enddate>20130501</enddate><creator>Hospodková, A.</creator><creator>Zíková, M.</creator><creator>Pangrác, J.</creator><creator>Oswald, J.</creator><creator>Kuldová, K.</creator><creator>Vyskočil, J.</creator><creator>Hulicius, E.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130501</creationdate><title>Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots</title><author>Hospodková, A. ; Zíková, M. ; Pangrác, J. ; Oswald, J. ; Kuldová, K. ; Vyskočil, J. ; Hulicius, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c408t-a05784e2f8bf8848a6109b8ff63fca4ae4682c5ce616ff27c7ac5917cd12137c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>A1. Band alignment</topic><topic>A1. Photoluminescence</topic><topic>A1. Quantum dot</topic><topic>A1. Strain reducing layer</topic><topic>A3. MOVPE</topic><topic>Antimony</topic><topic>B2. InAs/GaAs</topic><topic>Concentration gradient</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Equations of state, phase equilibria, and phase transitions</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Indium arsenides</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Other topics in nanoscale materials and structures</topic><topic>Physics</topic><topic>Quantum dots</topic><topic>Solubility, segregation, and mixing; phase separation</topic><topic>Strain</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><topic>Wavelengths</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hospodková, A.</creatorcontrib><creatorcontrib>Zíková, M.</creatorcontrib><creatorcontrib>Pangrác, J.</creatorcontrib><creatorcontrib>Oswald, J.</creatorcontrib><creatorcontrib>Kuldová, K.</creatorcontrib><creatorcontrib>Vyskočil, J.</creatorcontrib><creatorcontrib>Hulicius, E.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hospodková, A.</au><au>Zíková, M.</au><au>Pangrác, J.</au><au>Oswald, J.</au><au>Kuldová, K.</au><au>Vyskočil, J.</au><au>Hulicius, E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots</atitle><jtitle>Journal of crystal growth</jtitle><date>2013-05-01</date><risdate>2013</risdate><volume>370</volume><spage>303</spage><epage>306</epage><pages>303-306</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>We have grown new InAs/GaAs quantum dot (QD) structures with graded Sb concentration of GaAs(1−x)Sbx strain reducing layer (SRL). New types of GaAsSb SRLs with graded concentration of Sb are theoretically and experimentally studied. We compare properties of three different Sb concentration gradients in SRL, constant, increasing and decreasing during the growth. Both types of non-constant gradients help us to prevent transition of the InAs(QD)/GaAsSb(SRL) heterojunction from type I to type II, to increase emission wavelength and to retain high luminescence intensity of these types of QD structures. Comparison of photoluminescence of samples with different concentration gradients and similar average Sb concentration in SRLs is shown. The longest wavelength of type I ground state transition was achieved on sample with decreasing gradation of Sb content in SRL—1399nm (0.886eV).
► We suggest new types of graded GaAsSb strain reducing layers covering InAs/GaAs QDs. ► The longest photoluminescence wavelength was achieved for decreasing Sb gradient in SRL. ► We achieved type I ground state transition at 1399nm, FWHM 35meV and intense RT PL. ► The experimental data were in agreement with theoretically expected behavior.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2012.08.007</doi><tpages>4</tpages></addata></record> |
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| subjects | A1. Band alignment A1. Photoluminescence A1. Quantum dot A1. Strain reducing layer A3. MOVPE Antimony B2. InAs/GaAs Concentration gradient Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Equations of state, phase equilibria, and phase transitions Exact sciences and technology Gallium arsenide Gallium arsenides Indium arsenides Materials science Methods of crystal growth physics of crystal growth Nanoscale materials and structures: fabrication and characterization Other topics in nanoscale materials and structures Physics Quantum dots Solubility, segregation, and mixing phase separation Strain Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation Wavelengths |
| title | Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots |
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