Influence of initial growth pressure on the optical properties of Si-doped nonpolar a-plane GaN grown with different doping levels
The effect of crystalline quality of undoped a-plane GaN buffer layers on the properties of Si-doped GaN layers grown with different doping levels was investigated. The dominant photoluminescence (PL) emission at about 3.42eV (D1 band) for all Si-doped GaN samples was associated with excitons bound...
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| Veröffentlicht in: | Journal of crystal growth 2013-05, Vol.370, p.22-25 |
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| creator | Man Song, Keun Min Kim, Jong Soo Shin, Chan Gi Ko, Chul Koun Cho, Hyung Ho Yoon, Dae Min Hwang, Sung Kim, Hogyoung |
| description | The effect of crystalline quality of undoped a-plane GaN buffer layers on the properties of Si-doped GaN layers grown with different doping levels was investigated. The dominant photoluminescence (PL) emission at about 3.42eV (D1 band) for all Si-doped GaN samples was associated with excitons bound to basal stacking faults (BSFs). The intensity ratio of the D1 band to near band edge (NBE) emission was reduced with increasing doping concentration, associated with the decrease in the density of BSFs. Interestingly, it was also found that the intensity of the DAP–longitudinal optical (LO) phonon replica exceeded the DAP emission above 50K, which might be related to the structural defect-related emission in Si-doped a-plane GaN samples.
► Initial growth pressure for the nucleation layer vs. crystalline quality. ► Intensity ratio of emission band at (3.42eV) to near band edge (NBE) emission. ► Doping concentration vs. density of basal stacking faults (BSFs). ► Structural defect-related emission in Si-doped a-plane GaN samples. |
| doi_str_mv | 10.1016/j.jcrysgro.2012.06.026 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1506378044</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024812004368</els_id><sourcerecordid>1464545277</sourcerecordid><originalsourceid>FETCH-LOGICAL-c408t-5d3dcc9a1651009dc47dfe03cad0d58b286a40c3b6511a0e4f60d7310f7b38b03</originalsourceid><addsrcrecordid>eNqFkU1P3DAQhq2KSl1o_0LlSyUuCeOPONlbK8SXhOih7dny2mPwKjip7QVx7S-vwwJXLh5Z87zvjOYl5CuDlgFTJ9t2a9NTvk1Ty4HxFlQLXH0gKzb0oukA-AFZ1Zc3wOXwiRzmvAWoSgYr8u8q-nGH0SKdPA0xlGBGWr0eyx2dE-a8S7UVabmrZS7B1vacphlTCZgX0a_QuPp3NE5xnkaTqGnm0USkF-bm2SrSx1DtXPAeE8ZCKx_iLR3xAcf8mXz0Zsz45aUekT_nZ79PL5vrnxdXpz-uGythKE3nhLN2bZjqGMDaWdk7jyCsceC6YcMHZSRYsal9ZgClV-B6wcD3GzFsQByR471vXf_vDnPR9yFbHJdVp13WrAMl-gGkfB-VSnay431fUbVHbZpyTuj1nMK9SU-agV7y0Vv9mo9e8tGgdM2nCr-9zDC5HtUnE23Ib2rei_XQyXXlvu-5eip8CJh0tmEJzIWEtmg3hfdG_QfjiKup</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1464545277</pqid></control><display><type>article</type><title>Influence of initial growth pressure on the optical properties of Si-doped nonpolar a-plane GaN grown with different doping levels</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>Man Song, Keun ; Min Kim, Jong ; Soo Shin, Chan ; Gi Ko, Chul ; Koun Cho, Hyung ; Ho Yoon, Dae ; Min Hwang, Sung ; Kim, Hogyoung</creator><creatorcontrib>Man Song, Keun ; Min Kim, Jong ; Soo Shin, Chan ; Gi Ko, Chul ; Koun Cho, Hyung ; Ho Yoon, Dae ; Min Hwang, Sung ; Kim, Hogyoung</creatorcontrib><description>The effect of crystalline quality of undoped a-plane GaN buffer layers on the properties of Si-doped GaN layers grown with different doping levels was investigated. The dominant photoluminescence (PL) emission at about 3.42eV (D1 band) for all Si-doped GaN samples was associated with excitons bound to basal stacking faults (BSFs). The intensity ratio of the D1 band to near band edge (NBE) emission was reduced with increasing doping concentration, associated with the decrease in the density of BSFs. Interestingly, it was also found that the intensity of the DAP–longitudinal optical (LO) phonon replica exceeded the DAP emission above 50K, which might be related to the structural defect-related emission in Si-doped a-plane GaN samples.
► Initial growth pressure for the nucleation layer vs. crystalline quality. ► Intensity ratio of emission band at (3.42eV) to near band edge (NBE) emission. ► Doping concentration vs. density of basal stacking faults (BSFs). ► Structural defect-related emission in Si-doped a-plane GaN samples.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2012.06.026</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Doping ; A3. Metalorganic vapor phase epitaxy ; B1. Nitrides ; B2. Semiconducting III–V materials ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Crystal growth ; Crystal structure ; Defects and impurities in crystals; microstructure ; Density ; Doping ; Emission ; Exact sciences and technology ; Excitons ; Gallium nitrides ; Materials science ; Methods of crystal growth; physics of crystal growth ; Optical properties ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials and thin films ; Photoluminescence ; Physics ; Stacking faults and other planar or extended defects ; Structure of solids and liquids; crystallography ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><ispartof>Journal of crystal growth, 2013-05, Vol.370, p.22-25</ispartof><rights>2012 Elsevier B.V.</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c408t-5d3dcc9a1651009dc47dfe03cad0d58b286a40c3b6511a0e4f60d7310f7b38b03</citedby><cites>FETCH-LOGICAL-c408t-5d3dcc9a1651009dc47dfe03cad0d58b286a40c3b6511a0e4f60d7310f7b38b03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2012.06.026$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27398549$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Man Song, Keun</creatorcontrib><creatorcontrib>Min Kim, Jong</creatorcontrib><creatorcontrib>Soo Shin, Chan</creatorcontrib><creatorcontrib>Gi Ko, Chul</creatorcontrib><creatorcontrib>Koun Cho, Hyung</creatorcontrib><creatorcontrib>Ho Yoon, Dae</creatorcontrib><creatorcontrib>Min Hwang, Sung</creatorcontrib><creatorcontrib>Kim, Hogyoung</creatorcontrib><title>Influence of initial growth pressure on the optical properties of Si-doped nonpolar a-plane GaN grown with different doping levels</title><title>Journal of crystal growth</title><description>The effect of crystalline quality of undoped a-plane GaN buffer layers on the properties of Si-doped GaN layers grown with different doping levels was investigated. The dominant photoluminescence (PL) emission at about 3.42eV (D1 band) for all Si-doped GaN samples was associated with excitons bound to basal stacking faults (BSFs). The intensity ratio of the D1 band to near band edge (NBE) emission was reduced with increasing doping concentration, associated with the decrease in the density of BSFs. Interestingly, it was also found that the intensity of the DAP–longitudinal optical (LO) phonon replica exceeded the DAP emission above 50K, which might be related to the structural defect-related emission in Si-doped a-plane GaN samples.
► Initial growth pressure for the nucleation layer vs. crystalline quality. ► Intensity ratio of emission band at (3.42eV) to near band edge (NBE) emission. ► Doping concentration vs. density of basal stacking faults (BSFs). ► Structural defect-related emission in Si-doped a-plane GaN samples.</description><subject>A1. Doping</subject><subject>A3. Metalorganic vapor phase epitaxy</subject><subject>B1. Nitrides</subject><subject>B2. Semiconducting III–V materials</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystal growth</subject><subject>Crystal structure</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Density</subject><subject>Doping</subject><subject>Emission</subject><subject>Exact sciences and technology</subject><subject>Excitons</subject><subject>Gallium nitrides</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Optical properties</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Stacking faults and other planar or extended defects</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkU1P3DAQhq2KSl1o_0LlSyUuCeOPONlbK8SXhOih7dny2mPwKjip7QVx7S-vwwJXLh5Z87zvjOYl5CuDlgFTJ9t2a9NTvk1Ty4HxFlQLXH0gKzb0oukA-AFZ1Zc3wOXwiRzmvAWoSgYr8u8q-nGH0SKdPA0xlGBGWr0eyx2dE-a8S7UVabmrZS7B1vacphlTCZgX0a_QuPp3NE5xnkaTqGnm0USkF-bm2SrSx1DtXPAeE8ZCKx_iLR3xAcf8mXz0Zsz45aUekT_nZ79PL5vrnxdXpz-uGythKE3nhLN2bZjqGMDaWdk7jyCsceC6YcMHZSRYsal9ZgClV-B6wcD3GzFsQByR471vXf_vDnPR9yFbHJdVp13WrAMl-gGkfB-VSnay431fUbVHbZpyTuj1nMK9SU-agV7y0Vv9mo9e8tGgdM2nCr-9zDC5HtUnE23Ib2rei_XQyXXlvu-5eip8CJh0tmEJzIWEtmg3hfdG_QfjiKup</recordid><startdate>20130501</startdate><enddate>20130501</enddate><creator>Man Song, Keun</creator><creator>Min Kim, Jong</creator><creator>Soo Shin, Chan</creator><creator>Gi Ko, Chul</creator><creator>Koun Cho, Hyung</creator><creator>Ho Yoon, Dae</creator><creator>Min Hwang, Sung</creator><creator>Kim, Hogyoung</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130501</creationdate><title>Influence of initial growth pressure on the optical properties of Si-doped nonpolar a-plane GaN grown with different doping levels</title><author>Man Song, Keun ; Min Kim, Jong ; Soo Shin, Chan ; Gi Ko, Chul ; Koun Cho, Hyung ; Ho Yoon, Dae ; Min Hwang, Sung ; Kim, Hogyoung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c408t-5d3dcc9a1651009dc47dfe03cad0d58b286a40c3b6511a0e4f60d7310f7b38b03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>A1. Doping</topic><topic>A3. Metalorganic vapor phase epitaxy</topic><topic>B1. Nitrides</topic><topic>B2. Semiconducting III–V materials</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystal growth</topic><topic>Crystal structure</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Density</topic><topic>Doping</topic><topic>Emission</topic><topic>Exact sciences and technology</topic><topic>Excitons</topic><topic>Gallium nitrides</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Optical properties</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of bulk materials and thin films</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Stacking faults and other planar or extended defects</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Man Song, Keun</creatorcontrib><creatorcontrib>Min Kim, Jong</creatorcontrib><creatorcontrib>Soo Shin, Chan</creatorcontrib><creatorcontrib>Gi Ko, Chul</creatorcontrib><creatorcontrib>Koun Cho, Hyung</creatorcontrib><creatorcontrib>Ho Yoon, Dae</creatorcontrib><creatorcontrib>Min Hwang, Sung</creatorcontrib><creatorcontrib>Kim, Hogyoung</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Man Song, Keun</au><au>Min Kim, Jong</au><au>Soo Shin, Chan</au><au>Gi Ko, Chul</au><au>Koun Cho, Hyung</au><au>Ho Yoon, Dae</au><au>Min Hwang, Sung</au><au>Kim, Hogyoung</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of initial growth pressure on the optical properties of Si-doped nonpolar a-plane GaN grown with different doping levels</atitle><jtitle>Journal of crystal growth</jtitle><date>2013-05-01</date><risdate>2013</risdate><volume>370</volume><spage>22</spage><epage>25</epage><pages>22-25</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>The effect of crystalline quality of undoped a-plane GaN buffer layers on the properties of Si-doped GaN layers grown with different doping levels was investigated. The dominant photoluminescence (PL) emission at about 3.42eV (D1 band) for all Si-doped GaN samples was associated with excitons bound to basal stacking faults (BSFs). The intensity ratio of the D1 band to near band edge (NBE) emission was reduced with increasing doping concentration, associated with the decrease in the density of BSFs. Interestingly, it was also found that the intensity of the DAP–longitudinal optical (LO) phonon replica exceeded the DAP emission above 50K, which might be related to the structural defect-related emission in Si-doped a-plane GaN samples.
► Initial growth pressure for the nucleation layer vs. crystalline quality. ► Intensity ratio of emission band at (3.42eV) to near band edge (NBE) emission. ► Doping concentration vs. density of basal stacking faults (BSFs). ► Structural defect-related emission in Si-doped a-plane GaN samples.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2012.06.026</doi><tpages>4</tpages></addata></record> |
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| subjects | A1. Doping A3. Metalorganic vapor phase epitaxy B1. Nitrides B2. Semiconducting III–V materials Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystal growth Crystal structure Defects and impurities in crystals microstructure Density Doping Emission Exact sciences and technology Excitons Gallium nitrides Materials science Methods of crystal growth physics of crystal growth Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Photoluminescence Physics Stacking faults and other planar or extended defects Structure of solids and liquids crystallography Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation |
| title | Influence of initial growth pressure on the optical properties of Si-doped nonpolar a-plane GaN grown with different doping levels |
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