Change of effective thermal resistance of LED package according to an input current level

► Both the 24mil and 35mil LEDs showed a bimodal dependency of Rthe. ► At very low and high carrier densities, the non-radiative and Auger recombinations dominate. ► As a result, the external quantum efficiency (EQE) is degraded. ► The Rthe value was much higher for the 24mil LED than for the 35mil...

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Veröffentlicht in:	Solid-state electronics 2013-07, Vol.85, p.1-5
Hauptverfasser:	Ji, Peng Fei, Moon, Cheol-Hee
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Effective thermal resistance Electronics Exact sciences and technology External quantum efficiency (EQE) Heat transfer Integrated circuits Junction temperature LED Optical efficiency Optoelectronic devices Residual thermal resistance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Testing, measurement, noise and reliability
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