Junction formation by Zn(O,S) sputtering yields CIGSe-based cells with efficiencies exceeding 18

ABSTRACT In an effort to reduce the complexity and associated production costs of Cu(In,Ga)Se2 (CIGSe)‐based solar cells, the commonly used sputtered undoped ZnO layer has been modified to eliminate the requirement for a dedicated buffer layer. After replacing the ZnO target with a mixed ZnO/ZnS tar...

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Veröffentlicht in:	Progress in photovoltaics 2014-02, Vol.22 (2), p.161-165
Hauptverfasser:	Klenk, Reiner, Steigert, Alexander, Rissom, Thorsten, Greiner, Dieter, Kaufmann, Christian A., Unold, Thomas, Lux-Steiner, Martha Ch
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied sciences buffer Cu(In Cu(In,Ga)Se2 Energy Exact sciences and technology Ga)Se2 hetero junction Natural energy Photovoltaic conversion Solar cells. Photoelectrochemical cells Solar energy sputtering thin film Zn(O Zn(O,S)
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