Junction formation by Zn(O,S) sputtering yields CIGSe-based cells with efficiencies exceeding 18
ABSTRACT In an effort to reduce the complexity and associated production costs of Cu(In,Ga)Se2 (CIGSe)‐based solar cells, the commonly used sputtered undoped ZnO layer has been modified to eliminate the requirement for a dedicated buffer layer. After replacing the ZnO target with a mixed ZnO/ZnS tar...
Gespeichert in:
| Veröffentlicht in: | Progress in photovoltaics 2014-02, Vol.22 (2), p.161-165 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 165 |
|---|---|
| container_issue | 2 |
| container_start_page | 161 |
| container_title | Progress in photovoltaics |
| container_volume | 22 |
| creator | Klenk, Reiner Steigert, Alexander Rissom, Thorsten Greiner, Dieter Kaufmann, Christian A. Unold, Thomas Lux-Steiner, Martha Ch |
| description | ABSTRACT
In an effort to reduce the complexity and associated production costs of Cu(In,Ga)Se2 (CIGSe)‐based solar cells, the commonly used sputtered undoped ZnO layer has been modified to eliminate the requirement for a dedicated buffer layer. After replacing the ZnO target with a mixed ZnO/ZnS target, efficient solar cells could be prepared by sputtering directly onto the as‐grown CIGSe surface. This approach has now been tested with high‐quality lab‐scale glass/Mo/CIGSe substrates. An efficiency of 18.3% has been independently confirmed without any post‐deposition annealing or light soaking. Copyright © 2013 John Wiley & Sons, Ltd.
A CIGSe/Zn(O,S)/ZnO:Al solar cell with a confirmed efficiency of 18.3% demonstrates the feasibility of junction formation by sputtering. This result was achieved without any surface treatments, annealing, or light soaking. This opens up a very attractive route to Cd‐free chalcopyrite‐based modules without a dedicated buffer layer. |
| doi_str_mv | 10.1002/pip.2445 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_proquest_miscellaneous_1506370016</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3184519091</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3955-ff00f8e8dd062116782b5aa98ab42fd2b7417e02516563fb5fa85e66c5d9df273</originalsourceid><addsrcrecordid>eNpdke1L5DAQxoN4oK6Cf0JABIWrl6TN20dZvHVFTmHPF_wS03ai0W5bmxbd__5SFQ_8MDwD85vhGR6Edik5ooSwX61vj1iW8TW0SYnWCeX6dn3sBUuk1nwDbYXwRAiVSotNdH821EXvmxq7plva9y5f4bv64OLn4hCHduh76Hz9gFceqjLg6Xy2gCS3AUpcQFUF_Or7RwzO-cJDHStgeCsAynGJqm30w9kqwM6nTtDV75O_09Pk_GI2nx6fJ0WqOU-cI8QpUGUZjVIqpGI5t1Yrm2fMlSyXGZVAGKeCi9Tl3FnFQYiCl7p0TKYTdPBxt-2alwFCb5Y-jAZtDc0QDOVEpDL-LSK69w19aoauju4MzaQiGSM6jdT-J2VDYSvX2fhcMG3nl7ZbGaaIUiSCE5R8cK--gtXXnBIz5mFiHmbMw1zOL0f9z_vQw9sXb7tnI2Qqubn5MzOLmV7c8um1ydJ_0MiMnQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1478042093</pqid></control><display><type>article</type><title>Junction formation by Zn(O,S) sputtering yields CIGSe-based cells with efficiencies exceeding 18</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Klenk, Reiner ; Steigert, Alexander ; Rissom, Thorsten ; Greiner, Dieter ; Kaufmann, Christian A. ; Unold, Thomas ; Lux-Steiner, Martha Ch</creator><creatorcontrib>Klenk, Reiner ; Steigert, Alexander ; Rissom, Thorsten ; Greiner, Dieter ; Kaufmann, Christian A. ; Unold, Thomas ; Lux-Steiner, Martha Ch</creatorcontrib><description>ABSTRACT
In an effort to reduce the complexity and associated production costs of Cu(In,Ga)Se2 (CIGSe)‐based solar cells, the commonly used sputtered undoped ZnO layer has been modified to eliminate the requirement for a dedicated buffer layer. After replacing the ZnO target with a mixed ZnO/ZnS target, efficient solar cells could be prepared by sputtering directly onto the as‐grown CIGSe surface. This approach has now been tested with high‐quality lab‐scale glass/Mo/CIGSe substrates. An efficiency of 18.3% has been independently confirmed without any post‐deposition annealing or light soaking. Copyright © 2013 John Wiley & Sons, Ltd.
A CIGSe/Zn(O,S)/ZnO:Al solar cell with a confirmed efficiency of 18.3% demonstrates the feasibility of junction formation by sputtering. This result was achieved without any surface treatments, annealing, or light soaking. This opens up a very attractive route to Cd‐free chalcopyrite‐based modules without a dedicated buffer layer.</description><identifier>ISSN: 1062-7995</identifier><identifier>EISSN: 1099-159X</identifier><identifier>DOI: 10.1002/pip.2445</identifier><identifier>CODEN: PPHOED</identifier><language>eng</language><publisher>Bognor Regis: Blackwell Publishing Ltd</publisher><subject>Annealing ; Applied sciences ; buffer ; Cu(In ; Cu(In,Ga)Se2 ; Energy ; Exact sciences and technology ; Ga)Se2 ; hetero junction ; Natural energy ; Photovoltaic conversion ; Solar cells. Photoelectrochemical cells ; Solar energy ; sputtering ; thin film ; Zn(O ; Zn(O,S)</subject><ispartof>Progress in photovoltaics, 2014-02, Vol.22 (2), p.161-165</ispartof><rights>Copyright © 2013 John Wiley & Sons, Ltd.</rights><rights>2015 INIST-CNRS</rights><rights>Copyright © 2014 John Wiley & Sons, Ltd.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3955-ff00f8e8dd062116782b5aa98ab42fd2b7417e02516563fb5fa85e66c5d9df273</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpip.2445$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpip.2445$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28088009$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Klenk, Reiner</creatorcontrib><creatorcontrib>Steigert, Alexander</creatorcontrib><creatorcontrib>Rissom, Thorsten</creatorcontrib><creatorcontrib>Greiner, Dieter</creatorcontrib><creatorcontrib>Kaufmann, Christian A.</creatorcontrib><creatorcontrib>Unold, Thomas</creatorcontrib><creatorcontrib>Lux-Steiner, Martha Ch</creatorcontrib><title>Junction formation by Zn(O,S) sputtering yields CIGSe-based cells with efficiencies exceeding 18</title><title>Progress in photovoltaics</title><addtitle>Prog. Photovolt: Res. Appl</addtitle><description>ABSTRACT
In an effort to reduce the complexity and associated production costs of Cu(In,Ga)Se2 (CIGSe)‐based solar cells, the commonly used sputtered undoped ZnO layer has been modified to eliminate the requirement for a dedicated buffer layer. After replacing the ZnO target with a mixed ZnO/ZnS target, efficient solar cells could be prepared by sputtering directly onto the as‐grown CIGSe surface. This approach has now been tested with high‐quality lab‐scale glass/Mo/CIGSe substrates. An efficiency of 18.3% has been independently confirmed without any post‐deposition annealing or light soaking. Copyright © 2013 John Wiley & Sons, Ltd.
A CIGSe/Zn(O,S)/ZnO:Al solar cell with a confirmed efficiency of 18.3% demonstrates the feasibility of junction formation by sputtering. This result was achieved without any surface treatments, annealing, or light soaking. This opens up a very attractive route to Cd‐free chalcopyrite‐based modules without a dedicated buffer layer.</description><subject>Annealing</subject><subject>Applied sciences</subject><subject>buffer</subject><subject>Cu(In</subject><subject>Cu(In,Ga)Se2</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Ga)Se2</subject><subject>hetero junction</subject><subject>Natural energy</subject><subject>Photovoltaic conversion</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>sputtering</subject><subject>thin film</subject><subject>Zn(O</subject><subject>Zn(O,S)</subject><issn>1062-7995</issn><issn>1099-159X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpdke1L5DAQxoN4oK6Cf0JABIWrl6TN20dZvHVFTmHPF_wS03ai0W5bmxbd__5SFQ_8MDwD85vhGR6Edik5ooSwX61vj1iW8TW0SYnWCeX6dn3sBUuk1nwDbYXwRAiVSotNdH821EXvmxq7plva9y5f4bv64OLn4hCHduh76Hz9gFceqjLg6Xy2gCS3AUpcQFUF_Or7RwzO-cJDHStgeCsAynGJqm30w9kqwM6nTtDV75O_09Pk_GI2nx6fJ0WqOU-cI8QpUGUZjVIqpGI5t1Yrm2fMlSyXGZVAGKeCi9Tl3FnFQYiCl7p0TKYTdPBxt-2alwFCb5Y-jAZtDc0QDOVEpDL-LSK69w19aoauju4MzaQiGSM6jdT-J2VDYSvX2fhcMG3nl7ZbGaaIUiSCE5R8cK--gtXXnBIz5mFiHmbMw1zOL0f9z_vQw9sXb7tnI2Qqubn5MzOLmV7c8um1ydJ_0MiMnQ</recordid><startdate>201402</startdate><enddate>201402</enddate><creator>Klenk, Reiner</creator><creator>Steigert, Alexander</creator><creator>Rissom, Thorsten</creator><creator>Greiner, Dieter</creator><creator>Kaufmann, Christian A.</creator><creator>Unold, Thomas</creator><creator>Lux-Steiner, Martha Ch</creator><general>Blackwell Publishing Ltd</general><general>Wiley</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>IQODW</scope><scope>7SP</scope><scope>7TB</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope><scope>7QF</scope><scope>JG9</scope></search><sort><creationdate>201402</creationdate><title>Junction formation by Zn(O,S) sputtering yields CIGSe-based cells with efficiencies exceeding 18</title><author>Klenk, Reiner ; Steigert, Alexander ; Rissom, Thorsten ; Greiner, Dieter ; Kaufmann, Christian A. ; Unold, Thomas ; Lux-Steiner, Martha Ch</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3955-ff00f8e8dd062116782b5aa98ab42fd2b7417e02516563fb5fa85e66c5d9df273</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Annealing</topic><topic>Applied sciences</topic><topic>buffer</topic><topic>Cu(In</topic><topic>Cu(In,Ga)Se2</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Ga)Se2</topic><topic>hetero junction</topic><topic>Natural energy</topic><topic>Photovoltaic conversion</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>sputtering</topic><topic>thin film</topic><topic>Zn(O</topic><topic>Zn(O,S)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Klenk, Reiner</creatorcontrib><creatorcontrib>Steigert, Alexander</creatorcontrib><creatorcontrib>Rissom, Thorsten</creatorcontrib><creatorcontrib>Greiner, Dieter</creatorcontrib><creatorcontrib>Kaufmann, Christian A.</creatorcontrib><creatorcontrib>Unold, Thomas</creatorcontrib><creatorcontrib>Lux-Steiner, Martha Ch</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>Materials Research Database</collection><jtitle>Progress in photovoltaics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Klenk, Reiner</au><au>Steigert, Alexander</au><au>Rissom, Thorsten</au><au>Greiner, Dieter</au><au>Kaufmann, Christian A.</au><au>Unold, Thomas</au><au>Lux-Steiner, Martha Ch</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Junction formation by Zn(O,S) sputtering yields CIGSe-based cells with efficiencies exceeding 18</atitle><jtitle>Progress in photovoltaics</jtitle><addtitle>Prog. Photovolt: Res. Appl</addtitle><date>2014-02</date><risdate>2014</risdate><volume>22</volume><issue>2</issue><spage>161</spage><epage>165</epage><pages>161-165</pages><issn>1062-7995</issn><eissn>1099-159X</eissn><coden>PPHOED</coden><abstract>ABSTRACT
In an effort to reduce the complexity and associated production costs of Cu(In,Ga)Se2 (CIGSe)‐based solar cells, the commonly used sputtered undoped ZnO layer has been modified to eliminate the requirement for a dedicated buffer layer. After replacing the ZnO target with a mixed ZnO/ZnS target, efficient solar cells could be prepared by sputtering directly onto the as‐grown CIGSe surface. This approach has now been tested with high‐quality lab‐scale glass/Mo/CIGSe substrates. An efficiency of 18.3% has been independently confirmed without any post‐deposition annealing or light soaking. Copyright © 2013 John Wiley & Sons, Ltd.
A CIGSe/Zn(O,S)/ZnO:Al solar cell with a confirmed efficiency of 18.3% demonstrates the feasibility of junction formation by sputtering. This result was achieved without any surface treatments, annealing, or light soaking. This opens up a very attractive route to Cd‐free chalcopyrite‐based modules without a dedicated buffer layer.</abstract><cop>Bognor Regis</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1002/pip.2445</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1062-7995 |
| ispartof | Progress in photovoltaics, 2014-02, Vol.22 (2), p.161-165 |
| issn | 1062-7995 1099-159X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1506370016 |
| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Annealing Applied sciences buffer Cu(In Cu(In,Ga)Se2 Energy Exact sciences and technology Ga)Se2 hetero junction Natural energy Photovoltaic conversion Solar cells. Photoelectrochemical cells Solar energy sputtering thin film Zn(O Zn(O,S) |
| title | Junction formation by Zn(O,S) sputtering yields CIGSe-based cells with efficiencies exceeding 18 |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T22%3A15%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Junction%20formation%20by%20Zn(O,S)%20sputtering%20yields%20CIGSe-based%20cells%20with%20efficiencies%20exceeding%2018&rft.jtitle=Progress%20in%20photovoltaics&rft.au=Klenk,%20Reiner&rft.date=2014-02&rft.volume=22&rft.issue=2&rft.spage=161&rft.epage=165&rft.pages=161-165&rft.issn=1062-7995&rft.eissn=1099-159X&rft.coden=PPHOED&rft_id=info:doi/10.1002/pip.2445&rft_dat=%3Cproquest_pasca%3E3184519091%3C/proquest_pasca%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1478042093&rft_id=info:pmid/&rfr_iscdi=true |