Optimization of InGaN/GaN superlattice structures for high-efficiency vertical blue light-emitting diodes

We investigate carrier distribution and efficiency characteristics of GaN-based vertical blue light-emitting diodes (LEDs) having InGaN/GaN short-period superlattice (SL) structures by using numerical simulations. The SL structures exist between multiple-quantum-well active layers and an n-GaN layer...

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Veröffentlicht in:	Journal of applied physics 2013-11, Vol.114 (17), p.173101
Hauptverfasser:	Ryu, Han-Youl, Jun Choi, Won
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Computer simulation Concentration (composition) Doping Efficiency Electric potential Electron distribution Gallium nitrides Indium gallium nitrides Light emitting diodes Organic light emitting diodes Quantum efficiency Quantum wells Superlattices Vertical distribution
Online-Zugang:	Volltext
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