Melt growth and post-grown annealing of semiinsulating (CdZn)Te by vertical gradient freeze method
We present results of development of CdZnTe semi‐insulating crystals prepared by Vertical Gradient Freeze method in a 4‐zone furnace. We applied the way of growth of the crystal from the top when the first crystallization seed is created on the surface of the melt. The typical height of the crystals...
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| Veröffentlicht in: | Crystal research and technology (1979) 2013-04, Vol.48 (4), p.214-220 |
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| container_title | Crystal research and technology (1979) |
| container_volume | 48 |
| creator | Franc, J. Šedivý, L. Belas, E. Bugár, M. Zázvorka, J. Pekárek, J. Uxa, Š. Höschl, P. Fesh, R. |
| description | We present results of development of CdZnTe semi‐insulating crystals prepared by Vertical Gradient Freeze method in a 4‐zone furnace. We applied the way of growth of the crystal from the top when the first crystallization seed is created on the surface of the melt. The typical height of the crystals is 5 cm. Resistivity and photoconductivity profiles measured along the growth axis by contactless method are compared and their mutual correlation is explained based on a model of relative shift of the Fermi level and the midgap level present in the material. The influence of the Fermi level on electron trapping and recombination is summarized. We present here results of a two‐step annealing method aimed at reduction of Te inclusions while keeping the resistivity high. We employed CdTe:Cl VGF grown samples to eliminate Te inclusions observed in as grown crystals by two‐step post grown annealing in Cd and Te atmosphere and present a model of the processes leading to high resistivity material after annealing.
We present results of development of CdZnTe semi‐insulating crystals prepared by Vertical Gradient Freeze method in a 4‐zone furnace. We applied the way of growth of the crystal from the top when the first crystallization seed is created on the surface of the melt. The typical height of the crystals is 5 cm. Resistivity and photoconductivity profiles measured along the growth axis by contactless method are compared … |
| doi_str_mv | 10.1002/crat.201300006 |
| format | Article |
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We present results of development of CdZnTe semi‐insulating crystals prepared by Vertical Gradient Freeze method in a 4‐zone furnace. We applied the way of growth of the crystal from the top when the first crystallization seed is created on the surface of the melt. The typical height of the crystals is 5 cm. Resistivity and photoconductivity profiles measured along the growth axis by contactless method are compared …</description><identifier>ISSN: 0232-1300</identifier><identifier>EISSN: 1521-4079</identifier><identifier>DOI: 10.1002/crat.201300006</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>Annealing ; CdZnTe ; inclusions ; vertical gradient freeze method</subject><ispartof>Crystal research and technology (1979), 2013-04, Vol.48 (4), p.214-220</ispartof><rights>Copyright © 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3606-f6e32d5527d2245ff49a4599478bfd7afeb9b03b48563027c54b049c0fd3495d3</citedby><cites>FETCH-LOGICAL-c3606-f6e32d5527d2245ff49a4599478bfd7afeb9b03b48563027c54b049c0fd3495d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fcrat.201300006$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fcrat.201300006$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1416,27922,27923,45572,45573</link.rule.ids></links><search><creatorcontrib>Franc, J.</creatorcontrib><creatorcontrib>Šedivý, L.</creatorcontrib><creatorcontrib>Belas, E.</creatorcontrib><creatorcontrib>Bugár, M.</creatorcontrib><creatorcontrib>Zázvorka, J.</creatorcontrib><creatorcontrib>Pekárek, J.</creatorcontrib><creatorcontrib>Uxa, Š.</creatorcontrib><creatorcontrib>Höschl, P.</creatorcontrib><creatorcontrib>Fesh, R.</creatorcontrib><title>Melt growth and post-grown annealing of semiinsulating (CdZn)Te by vertical gradient freeze method</title><title>Crystal research and technology (1979)</title><addtitle>Cryst. Res. Technol</addtitle><description>We present results of development of CdZnTe semi‐insulating crystals prepared by Vertical Gradient Freeze method in a 4‐zone furnace. We applied the way of growth of the crystal from the top when the first crystallization seed is created on the surface of the melt. The typical height of the crystals is 5 cm. Resistivity and photoconductivity profiles measured along the growth axis by contactless method are compared and their mutual correlation is explained based on a model of relative shift of the Fermi level and the midgap level present in the material. The influence of the Fermi level on electron trapping and recombination is summarized. We present here results of a two‐step annealing method aimed at reduction of Te inclusions while keeping the resistivity high. We employed CdTe:Cl VGF grown samples to eliminate Te inclusions observed in as grown crystals by two‐step post grown annealing in Cd and Te atmosphere and present a model of the processes leading to high resistivity material after annealing.
We present results of development of CdZnTe semi‐insulating crystals prepared by Vertical Gradient Freeze method in a 4‐zone furnace. We applied the way of growth of the crystal from the top when the first crystallization seed is created on the surface of the melt. The typical height of the crystals is 5 cm. Resistivity and photoconductivity profiles measured along the growth axis by contactless method are compared …</description><subject>Annealing</subject><subject>CdZnTe</subject><subject>inclusions</subject><subject>vertical gradient freeze method</subject><issn>0232-1300</issn><issn>1521-4079</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkElPwzAQhS0EEqVw5ewjHFIcL0l9RBWUpawqQuJiOfG4GNKk2C5Qfj2JihA35jKamfe9kR5C-ykZpITQo9LrOKAkZaStbAP1UkHThJNcbqIeoYwm3Wkb7YTw0ipkxmkPFVdQRTzzzUd8xro2eNGEmHRz3Y416MrVM9xYHGDuXB2WlY7d5mBknurDKeBihd_BR1fqqrXRxkEdsfUAX4DnEJ8bs4u2rK4C7P30Pno4PZmOzpLJzfh8dDxJSpaRLLEZMGqEoLmhlAtrudRcSMnzYWFNri0UsiCs4EORMULzUvCCcFkSaxiXwrA-Olj7LnzztoQQ1dyFEqpK19Asg0q55Iyy9kMrHaylpW9C8GDVwru59iuVEtWFqbow1W-YLSDXwIerYPWPWo3uj6d_2WTNuhDh85fV_lVlOcuFerweq7tLMbm4FWN1wb4BcoSIGg</recordid><startdate>201304</startdate><enddate>201304</enddate><creator>Franc, J.</creator><creator>Šedivý, L.</creator><creator>Belas, E.</creator><creator>Bugár, M.</creator><creator>Zázvorka, J.</creator><creator>Pekárek, J.</creator><creator>Uxa, Š.</creator><creator>Höschl, P.</creator><creator>Fesh, R.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201304</creationdate><title>Melt growth and post-grown annealing of semiinsulating (CdZn)Te by vertical gradient freeze method</title><author>Franc, J. ; Šedivý, L. ; Belas, E. ; Bugár, M. ; Zázvorka, J. ; Pekárek, J. ; Uxa, Š. ; Höschl, P. ; Fesh, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3606-f6e32d5527d2245ff49a4599478bfd7afeb9b03b48563027c54b049c0fd3495d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Annealing</topic><topic>CdZnTe</topic><topic>inclusions</topic><topic>vertical gradient freeze method</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Franc, J.</creatorcontrib><creatorcontrib>Šedivý, L.</creatorcontrib><creatorcontrib>Belas, E.</creatorcontrib><creatorcontrib>Bugár, M.</creatorcontrib><creatorcontrib>Zázvorka, J.</creatorcontrib><creatorcontrib>Pekárek, J.</creatorcontrib><creatorcontrib>Uxa, Š.</creatorcontrib><creatorcontrib>Höschl, P.</creatorcontrib><creatorcontrib>Fesh, R.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Crystal research and technology (1979)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Franc, J.</au><au>Šedivý, L.</au><au>Belas, E.</au><au>Bugár, M.</au><au>Zázvorka, J.</au><au>Pekárek, J.</au><au>Uxa, Š.</au><au>Höschl, P.</au><au>Fesh, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Melt growth and post-grown annealing of semiinsulating (CdZn)Te by vertical gradient freeze method</atitle><jtitle>Crystal research and technology (1979)</jtitle><addtitle>Cryst. Res. Technol</addtitle><date>2013-04</date><risdate>2013</risdate><volume>48</volume><issue>4</issue><spage>214</spage><epage>220</epage><pages>214-220</pages><issn>0232-1300</issn><eissn>1521-4079</eissn><abstract>We present results of development of CdZnTe semi‐insulating crystals prepared by Vertical Gradient Freeze method in a 4‐zone furnace. We applied the way of growth of the crystal from the top when the first crystallization seed is created on the surface of the melt. The typical height of the crystals is 5 cm. Resistivity and photoconductivity profiles measured along the growth axis by contactless method are compared and their mutual correlation is explained based on a model of relative shift of the Fermi level and the midgap level present in the material. The influence of the Fermi level on electron trapping and recombination is summarized. We present here results of a two‐step annealing method aimed at reduction of Te inclusions while keeping the resistivity high. We employed CdTe:Cl VGF grown samples to eliminate Te inclusions observed in as grown crystals by two‐step post grown annealing in Cd and Te atmosphere and present a model of the processes leading to high resistivity material after annealing.
We present results of development of CdZnTe semi‐insulating crystals prepared by Vertical Gradient Freeze method in a 4‐zone furnace. We applied the way of growth of the crystal from the top when the first crystallization seed is created on the surface of the melt. The typical height of the crystals is 5 cm. Resistivity and photoconductivity profiles measured along the growth axis by contactless method are compared …</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/crat.201300006</doi><tpages>7</tpages></addata></record> |
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| ispartof | Crystal research and technology (1979), 2013-04, Vol.48 (4), p.214-220 |
| issn | 0232-1300 1521-4079 |
| language | eng |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Annealing CdZnTe inclusions vertical gradient freeze method |
| title | Melt growth and post-grown annealing of semiinsulating (CdZn)Te by vertical gradient freeze method |
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