Antiferromagnetic half-metals, gapless half-metals, and spin gapless semiconductors: The D03-type Heusler alloys

High-spin-polarization materials are desired for the realization of high-performance spintronic devices. We combine recent experimental and theoretical findings to theoretically design several high-spin-polarization materials in binary D03-type Heusler alloys: gapless (zero-gap) half-metallic ferrim...

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Veröffentlicht in:	Applied physics letters 2013-12, Vol.103 (23)
Hauptverfasser:	Gao, G. Y., Yao, Kai-Lun
Format:	Artikel
Sprache:	eng
Schlagworte:	Antiferromagnetism Applied physics Binary alloys Electronic structure Electrons Energy gap Ferrimagnetism Ferrimagnets First principles Heusler alloys Magnetic moments Polarization (spin alignment)
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creator	Gao, G. Y. Yao, Kai-Lun
description	High-spin-polarization materials are desired for the realization of high-performance spintronic devices. We combine recent experimental and theoretical findings to theoretically design several high-spin-polarization materials in binary D03-type Heusler alloys: gapless (zero-gap) half-metallic ferrimagnets of V3Si and V3Ge, half-metallic antiferromagnets of Mn3Al and Mn3Ga, half-metallic ferrimagnets of Mn3Si and Mn3Ge, and a spin gapless semiconductor of Cr3Al. The high spin polarization, zero net magnetic moment, zero energy gap, and slight disorder compared to the ternary and quaternary Heusler alloys make these binary materials promising candidates for spintronic applications. All results are obtained by the electronic structure calculations from first-principles.
doi_str_mv	10.1063/1.4840318
format	Article
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Y. ; Yao, Kai-Lun</creator><creatorcontrib>Gao, G. Y. ; Yao, Kai-Lun</creatorcontrib><description>High-spin-polarization materials are desired for the realization of high-performance spintronic devices. We combine recent experimental and theoretical findings to theoretically design several high-spin-polarization materials in binary D03-type Heusler alloys: gapless (zero-gap) half-metallic ferrimagnets of V3Si and V3Ge, half-metallic antiferromagnets of Mn3Al and Mn3Ga, half-metallic ferrimagnets of Mn3Si and Mn3Ge, and a spin gapless semiconductor of Cr3Al. The high spin polarization, zero net magnetic moment, zero energy gap, and slight disorder compared to the ternary and quaternary Heusler alloys make these binary materials promising candidates for spintronic applications. All results are obtained by the electronic structure calculations from first-principles.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4840318</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Antiferromagnetism ; Applied physics ; Binary alloys ; Electronic structure ; Electrons ; Energy gap ; Ferrimagnetism ; Ferrimagnets ; First principles ; Heusler alloys ; Magnetic moments ; Polarization (spin alignment)</subject><ispartof>Applied physics letters, 2013-12, Vol.103 (23)</ispartof><rights>2013 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c271t-dbd6ca37ebc1322198ffe7f05c245580cb221fead15bfcec02f9185055a115a63</citedby><cites>FETCH-LOGICAL-c271t-dbd6ca37ebc1322198ffe7f05c245580cb221fead15bfcec02f9185055a115a63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Gao, G. Y.</creatorcontrib><creatorcontrib>Yao, Kai-Lun</creatorcontrib><title>Antiferromagnetic half-metals, gapless half-metals, and spin gapless semiconductors: The D03-type Heusler alloys</title><title>Applied physics letters</title><description>High-spin-polarization materials are desired for the realization of high-performance spintronic devices. We combine recent experimental and theoretical findings to theoretically design several high-spin-polarization materials in binary D03-type Heusler alloys: gapless (zero-gap) half-metallic ferrimagnets of V3Si and V3Ge, half-metallic antiferromagnets of Mn3Al and Mn3Ga, half-metallic ferrimagnets of Mn3Si and Mn3Ge, and a spin gapless semiconductor of Cr3Al. The high spin polarization, zero net magnetic moment, zero energy gap, and slight disorder compared to the ternary and quaternary Heusler alloys make these binary materials promising candidates for spintronic applications. 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Y. ; Yao, Kai-Lun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c271t-dbd6ca37ebc1322198ffe7f05c245580cb221fead15bfcec02f9185055a115a63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Antiferromagnetism</topic><topic>Applied physics</topic><topic>Binary alloys</topic><topic>Electronic structure</topic><topic>Electrons</topic><topic>Energy gap</topic><topic>Ferrimagnetism</topic><topic>Ferrimagnets</topic><topic>First principles</topic><topic>Heusler alloys</topic><topic>Magnetic moments</topic><topic>Polarization (spin alignment)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gao, G. 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The high spin polarization, zero net magnetic moment, zero energy gap, and slight disorder compared to the ternary and quaternary Heusler alloys make these binary materials promising candidates for spintronic applications. All results are obtained by the electronic structure calculations from first-principles.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4840318</doi></addata></record>
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subjects	Antiferromagnetism Applied physics Binary alloys Electronic structure Electrons Energy gap Ferrimagnetism Ferrimagnets First principles Heusler alloys Magnetic moments Polarization (spin alignment)
title	Antiferromagnetic half-metals, gapless half-metals, and spin gapless semiconductors: The D03-type Heusler alloys
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