Electromechanically tuned resistive switching device

Hysteresis I-V is observed in our Cu-ZnO nanowire-Cu devices, the dynamic characteristics of which are measured across a very wide frequency band. The devices demonstrate a strong frequency dependent I-V. A working mechanism based on that of electromechanically tunable varistors is postulated by ana...

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Veröffentlicht in:	Applied physics letters 2013-12, Vol.103 (23)
1. Verfasser:	Li, Lijie
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Devices Dynamic characteristics Electronic devices Nanowires Varistors Zinc oxide
Online-Zugang:	Volltext
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