Electromechanically tuned resistive switching device

Hysteresis I-V is observed in our Cu-ZnO nanowire-Cu devices, the dynamic characteristics of which are measured across a very wide frequency band. The devices demonstrate a strong frequency dependent I-V. A working mechanism based on that of electromechanically tunable varistors is postulated by ana...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 2013-12, Vol.103 (23)
1. Verfasser:	Li, Lijie
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Devices Dynamic characteristics Electronic devices Nanowires Varistors Zinc oxide
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue	23
container_start_page
container_title	Applied physics letters
container_volume	103
creator	Li, Lijie
description	Hysteresis I-V is observed in our Cu-ZnO nanowire-Cu devices, the dynamic characteristics of which are measured across a very wide frequency band. The devices demonstrate a strong frequency dependent I-V. A working mechanism based on that of electromechanically tunable varistors is postulated by analyzing the experimental results. Electrostatic force induced by the external voltage was able to alter the location of the nanowires and in turn change the nonlinearity of the varistor. The theory also well elucidates the behavior of our devices driven at higher frequencies.
doi_str_mv	10.1063/1.4839415
format	Article
fullrecord	<record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1494308084</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1494308084</sourcerecordid><originalsourceid>FETCH-LOGICAL-c290t-8f00b09bfe86b9c883febeb2db549636acaa40f2580274c75992ba85164d5d2d3</originalsourceid><addsrcrecordid>eNpdkE1LAzEYhIMoWKsH_8GCFz1sffO1mxyl1A8oeNFzSLLv2pT9qMlupf_elfbkaRh4GGaGkFsKCwoFf6QLobgWVJ6RGYWyzDml6pzMAIDnhZb0klyltJ2sZJzPiFg16IfYt-g3tgveNs0hG8YOqyxiCmkIe8zSTxj8JnRfWYX74PGaXNS2SXhz0jn5fF59LF_z9fvL2_JpnXumYchVDeBAuxpV4bRXitfo0LHKSaELXlhvrYCaSQWsFL6UWjNnlaSFqGTFKj4n98fcXey_R0yDaUPy2DS2w35MhgotOChQYkLv_qHbfozd1M4wyspyms71RD0cKR_7lCLWZhdDa-PBUDB__xlqTv_xX5tbYPM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2127769539</pqid></control><display><type>article</type><title>Electromechanically tuned resistive switching device</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Li, Lijie</creator><creatorcontrib>Li, Lijie</creatorcontrib><description>Hysteresis I-V is observed in our Cu-ZnO nanowire-Cu devices, the dynamic characteristics of which are measured across a very wide frequency band. The devices demonstrate a strong frequency dependent I-V. A working mechanism based on that of electromechanically tunable varistors is postulated by analyzing the experimental results. Electrostatic force induced by the external voltage was able to alter the location of the nanowires and in turn change the nonlinearity of the varistor. The theory also well elucidates the behavior of our devices driven at higher frequencies.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4839415</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Devices ; Dynamic characteristics ; Electronic devices ; Nanowires ; Varistors ; Zinc oxide</subject><ispartof>Applied physics letters, 2013-12, Vol.103 (23)</ispartof><rights>2013 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c290t-8f00b09bfe86b9c883febeb2db549636acaa40f2580274c75992ba85164d5d2d3</citedby><cites>FETCH-LOGICAL-c290t-8f00b09bfe86b9c883febeb2db549636acaa40f2580274c75992ba85164d5d2d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Li, Lijie</creatorcontrib><title>Electromechanically tuned resistive switching device</title><title>Applied physics letters</title><description>Hysteresis I-V is observed in our Cu-ZnO nanowire-Cu devices, the dynamic characteristics of which are measured across a very wide frequency band. The devices demonstrate a strong frequency dependent I-V. A working mechanism based on that of electromechanically tunable varistors is postulated by analyzing the experimental results. Electrostatic force induced by the external voltage was able to alter the location of the nanowires and in turn change the nonlinearity of the varistor. The theory also well elucidates the behavior of our devices driven at higher frequencies.</description><subject>Applied physics</subject><subject>Devices</subject><subject>Dynamic characteristics</subject><subject>Electronic devices</subject><subject>Nanowires</subject><subject>Varistors</subject><subject>Zinc oxide</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNpdkE1LAzEYhIMoWKsH_8GCFz1sffO1mxyl1A8oeNFzSLLv2pT9qMlupf_elfbkaRh4GGaGkFsKCwoFf6QLobgWVJ6RGYWyzDml6pzMAIDnhZb0klyltJ2sZJzPiFg16IfYt-g3tgveNs0hG8YOqyxiCmkIe8zSTxj8JnRfWYX74PGaXNS2SXhz0jn5fF59LF_z9fvL2_JpnXumYchVDeBAuxpV4bRXitfo0LHKSaELXlhvrYCaSQWsFL6UWjNnlaSFqGTFKj4n98fcXey_R0yDaUPy2DS2w35MhgotOChQYkLv_qHbfozd1M4wyspyms71RD0cKR_7lCLWZhdDa-PBUDB__xlqTv_xX5tbYPM</recordid><startdate>20131202</startdate><enddate>20131202</enddate><creator>Li, Lijie</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7TB</scope><scope>7U5</scope><scope>FR3</scope></search><sort><creationdate>20131202</creationdate><title>Electromechanically tuned resistive switching device</title><author>Li, Lijie</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c290t-8f00b09bfe86b9c883febeb2db549636acaa40f2580274c75992ba85164d5d2d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Applied physics</topic><topic>Devices</topic><topic>Dynamic characteristics</topic><topic>Electronic devices</topic><topic>Nanowires</topic><topic>Varistors</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Lijie</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Engineering Research Database</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Lijie</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electromechanically tuned resistive switching device</atitle><jtitle>Applied physics letters</jtitle><date>2013-12-02</date><risdate>2013</risdate><volume>103</volume><issue>23</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Hysteresis I-V is observed in our Cu-ZnO nanowire-Cu devices, the dynamic characteristics of which are measured across a very wide frequency band. The devices demonstrate a strong frequency dependent I-V. A working mechanism based on that of electromechanically tunable varistors is postulated by analyzing the experimental results. Electrostatic force induced by the external voltage was able to alter the location of the nanowires and in turn change the nonlinearity of the varistor. The theory also well elucidates the behavior of our devices driven at higher frequencies.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4839415</doi></addata></record>
fulltext	fulltext
identifier	ISSN: 0003-6951
ispartof	Applied physics letters, 2013-12, Vol.103 (23)
issn	0003-6951 1077-3118
language	eng
recordid	cdi_proquest_miscellaneous_1494308084
source	AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
subjects	Applied physics Devices Dynamic characteristics Electronic devices Nanowires Varistors Zinc oxide
title	Electromechanically tuned resistive switching device
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T10%3A47%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electromechanically%20tuned%20resistive%20switching%20device&rft.jtitle=Applied%20physics%20letters&rft.au=Li,%20Lijie&rft.date=2013-12-02&rft.volume=103&rft.issue=23&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4839415&rft_dat=%3Cproquest_cross%3E1494308084%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2127769539&rft_id=info:pmid/&rfr_iscdi=true