Comparative study on nano-scale III-V double-gate MOSFETs with various channel materials

The current drivability of III‐V double gate MOSFETs with various channel materials are investigated by using quantum‐corrected Monte Carlo simulation. The InGaAs channel shows the largest electron injection velocity vinj. However, the backward currents by alloy scattering (AL) in the channel and by...

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Veröffentlicht in:	Physica status solidi. C 2013-11, Vol.10 (11), p.1413-1416
Hauptverfasser:	Nishida, Akio, Hasegawa, Kei, Ohama, Ryoko, Fujikawa, Sachie, Hara, Shinsuke, Fujishiro, Hiroki I.
Format:	Artikel
Sprache:	eng
Schlagworte:	backscattering Channels III-V double-gate MOSFET injection velocity quantum-corrected Monte Carlo simulation rebound
Online-Zugang:	Volltext
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