A compact model for tunnel field-effect transistors incorporating nonlocal band-to-band tunneling

To enable circuit design using tunnel field-effect transistors (TFETs), a physics-based model based on nonlocal band-to-band tunneling is developed. To maintain accuracy, the tunneling lengths are estimated assuming that both vertical and horizontal tunneling paths exist in the device. The static cu...

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Veröffentlicht in:	Journal of applied physics 2013-10, Vol.114 (14)
Hauptverfasser:	Fukuda, K., Mori, T., Mizubayashi, W., Morita, Y., Tanabe, A., Masahara, M., Yasuda, T., Migita, S., Ota, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuit design
Online-Zugang:	Volltext
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