Forming-Free Resistive Switching in Multiferroic BiFeO3 thin Films with Enhanced Nanoscale Shunts

A controlled shunting of polycrystalline oxide thin films on the nanometer length scale opens the door to significantly modify their transport properties. In this paper, the low energy Ar+ irradiation induced shunting effect of forming-free, non-volatile resistive switching in polycrystalline BiFeO3...

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Veröffentlicht in:	ACS applied materials & interfaces 2013-12, Vol.5 (23), p.12764-12771
Hauptverfasser:	Ou, Xin, Shuai, Yao, Luo, Wenbo, Siles, Pablo F, Kögler, Reinhard, Fiedler, Jan, Reuther, Helfried, Zhou, Shengqiang, Hübner, René, Facsko, Stefan, Helm, Manfred, Mikolajick, Thomas, Schmidt, Oliver G, Schmidt, Heidemarie
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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