High-Performance Low-Cost Back-Channel-Etch Amorphous Gallium–Indium–Zinc Oxide Thin-Film Transistors by Curing and Passivation of the Damaged Back Channel

High-performance, low-cost amorphous gallium–indium–zinc oxide (a-GIZO) thin-film-transistor (TFT) technology is required for the next generation of active-matrix organic light-emitting diodes. A back-channel-etch structure is the most appropriate device structure for high-performance, low-cost a-GI...

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Veröffentlicht in:	ACS applied materials & interfaces 2013-12, Vol.5 (23), p.12262-12267
Hauptverfasser:	Park, Jae Chul, Ahn, Seung-Eon, Lee, Ho-Nyeon
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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