Growth of AlN by pulsed and conventional MOVPE
Aluminium nitride was grown on c-plane sapphire by metal organic vapor phase epitaxy (MOVPE) at temperatures of 1070°C by a pulsed growth method and in continuous growth mode at temperatures up to 1270°C. For both methods the V/III ratio was varied and different approaches for the growth start were...
Gespeichert in:
| Veröffentlicht in: | Journal of crystal growth 2013-10, Vol.381, p.100-106 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 106 |
|---|---|
| container_issue | |
| container_start_page | 100 |
| container_title | Journal of crystal growth |
| container_volume | 381 |
| creator | Kröncke, Hanno Figge, Stephan Aschenbrenner, Timo Hommel, Detlef |
| description | Aluminium nitride was grown on c-plane sapphire by metal organic vapor phase epitaxy (MOVPE) at temperatures of 1070°C by a pulsed growth method and in continuous growth mode at temperatures up to 1270°C. For both methods the V/III ratio was varied and different approaches for the growth start were investigated. The crystal quality was mainly characterized by scanning electron microscopy and high resolution X-ray diffraction which showed unusual line shape for certain samples. Both growth methods enabled the growth of more than 1μm thick, atomically flat, Al-polar layers with edge type dislocation densities in the order of 3×1010cm−2 for pulsed samples and 5×109cm−2 for conventionally grown samples.
•We have grown AlN by pulsed and conventional MOVPE in the same reactor.•The influence of growth start, V/III ratio and atmospheric conditions was investigated.•The growth mechanism was investigated by reflectometry in pulsed mode. |
| doi_str_mv | 10.1016/j.jcrysgro.2013.06.038 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1464571286</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024813004776</els_id><sourcerecordid>1464571286</sourcerecordid><originalsourceid>FETCH-LOGICAL-c441t-622ffb4d75523bb4b225b5bab1e419e9a5faf0f775bd5dbeb16f132000c50b8a3</originalsourceid><addsrcrecordid>eNqFkDFPwzAQhS0EEqXwF1AWJJaEs2M76UZVQUEqlAFYLduxwVUaFzst6r_HVQsry91w7929-xC6xFBgwPxmUSx02MaP4AsCuCyAF1DWR2iA66rMGQA5RoNUSQ6E1qfoLMYFQHJiGKBiGvx3_5l5m43b50xts9W6jabJZNdk2ncb0_XOd7LNnubvL3fn6MTKNL849CF6u797nTzks_n0cTKe5ZpS3OecEGsVbSrGSKkUVYQwxZRU2FA8MiPJrLRgq4qphjXKKMwtLklKpRmoWpZDdL3fuwr-a21iL5YuatO2sjN-HQWmnLIKk5onKd9LdfAxBmPFKrilDFuBQewAiYX4BSR2gARwkQAl49XhhoxatjbITrv45yYpHWGEJt3tXmfSwxtngojamU6bxgWje9F499-pH4YTfhA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1464571286</pqid></control><display><type>article</type><title>Growth of AlN by pulsed and conventional MOVPE</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>Kröncke, Hanno ; Figge, Stephan ; Aschenbrenner, Timo ; Hommel, Detlef</creator><creatorcontrib>Kröncke, Hanno ; Figge, Stephan ; Aschenbrenner, Timo ; Hommel, Detlef</creatorcontrib><description>Aluminium nitride was grown on c-plane sapphire by metal organic vapor phase epitaxy (MOVPE) at temperatures of 1070°C by a pulsed growth method and in continuous growth mode at temperatures up to 1270°C. For both methods the V/III ratio was varied and different approaches for the growth start were investigated. The crystal quality was mainly characterized by scanning electron microscopy and high resolution X-ray diffraction which showed unusual line shape for certain samples. Both growth methods enabled the growth of more than 1μm thick, atomically flat, Al-polar layers with edge type dislocation densities in the order of 3×1010cm−2 for pulsed samples and 5×109cm−2 for conventionally grown samples.
•We have grown AlN by pulsed and conventional MOVPE in the same reactor.•The influence of growth start, V/III ratio and atmospheric conditions was investigated.•The growth mechanism was investigated by reflectometry in pulsed mode.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2013.06.038</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. High resolution X-ray diffraction ; A3. Organometallic vapor phase epitaxy ; Aluminium nitride ; Aluminum ; B1. Nitrides ; B1. Sapphire ; B2. Semiconducting III–V materials ; Cross-disciplinary physics: materials science; rheology ; Crystal growth ; Crystals ; Diffraction ; Dislocation density ; Exact sciences and technology ; Line shape ; Materials science ; Methods of crystal growth; physics of crystal growth ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation ; Vapor phase epitaxy ; Vapor phase epitaxy; growth from vapor phase</subject><ispartof>Journal of crystal growth, 2013-10, Vol.381, p.100-106</ispartof><rights>2013 Elsevier B.V.</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c441t-622ffb4d75523bb4b225b5bab1e419e9a5faf0f775bd5dbeb16f132000c50b8a3</citedby><cites>FETCH-LOGICAL-c441t-622ffb4d75523bb4b225b5bab1e419e9a5faf0f775bd5dbeb16f132000c50b8a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2013.06.038$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27752524$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kröncke, Hanno</creatorcontrib><creatorcontrib>Figge, Stephan</creatorcontrib><creatorcontrib>Aschenbrenner, Timo</creatorcontrib><creatorcontrib>Hommel, Detlef</creatorcontrib><title>Growth of AlN by pulsed and conventional MOVPE</title><title>Journal of crystal growth</title><description>Aluminium nitride was grown on c-plane sapphire by metal organic vapor phase epitaxy (MOVPE) at temperatures of 1070°C by a pulsed growth method and in continuous growth mode at temperatures up to 1270°C. For both methods the V/III ratio was varied and different approaches for the growth start were investigated. The crystal quality was mainly characterized by scanning electron microscopy and high resolution X-ray diffraction which showed unusual line shape for certain samples. Both growth methods enabled the growth of more than 1μm thick, atomically flat, Al-polar layers with edge type dislocation densities in the order of 3×1010cm−2 for pulsed samples and 5×109cm−2 for conventionally grown samples.
•We have grown AlN by pulsed and conventional MOVPE in the same reactor.•The influence of growth start, V/III ratio and atmospheric conditions was investigated.•The growth mechanism was investigated by reflectometry in pulsed mode.</description><subject>A1. High resolution X-ray diffraction</subject><subject>A3. Organometallic vapor phase epitaxy</subject><subject>Aluminium nitride</subject><subject>Aluminum</subject><subject>B1. Nitrides</subject><subject>B1. Sapphire</subject><subject>B2. Semiconducting III–V materials</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystal growth</subject><subject>Crystals</subject><subject>Diffraction</subject><subject>Dislocation density</subject><subject>Exact sciences and technology</subject><subject>Line shape</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><subject>Vapor phase epitaxy</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkDFPwzAQhS0EEqXwF1AWJJaEs2M76UZVQUEqlAFYLduxwVUaFzst6r_HVQsry91w7929-xC6xFBgwPxmUSx02MaP4AsCuCyAF1DWR2iA66rMGQA5RoNUSQ6E1qfoLMYFQHJiGKBiGvx3_5l5m43b50xts9W6jabJZNdk2ncb0_XOd7LNnubvL3fn6MTKNL849CF6u797nTzks_n0cTKe5ZpS3OecEGsVbSrGSKkUVYQwxZRU2FA8MiPJrLRgq4qphjXKKMwtLklKpRmoWpZDdL3fuwr-a21iL5YuatO2sjN-HQWmnLIKk5onKd9LdfAxBmPFKrilDFuBQewAiYX4BSR2gARwkQAl49XhhoxatjbITrv45yYpHWGEJt3tXmfSwxtngojamU6bxgWje9F499-pH4YTfhA</recordid><startdate>20131015</startdate><enddate>20131015</enddate><creator>Kröncke, Hanno</creator><creator>Figge, Stephan</creator><creator>Aschenbrenner, Timo</creator><creator>Hommel, Detlef</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20131015</creationdate><title>Growth of AlN by pulsed and conventional MOVPE</title><author>Kröncke, Hanno ; Figge, Stephan ; Aschenbrenner, Timo ; Hommel, Detlef</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c441t-622ffb4d75523bb4b225b5bab1e419e9a5faf0f775bd5dbeb16f132000c50b8a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>A1. High resolution X-ray diffraction</topic><topic>A3. Organometallic vapor phase epitaxy</topic><topic>Aluminium nitride</topic><topic>Aluminum</topic><topic>B1. Nitrides</topic><topic>B1. Sapphire</topic><topic>B2. Semiconducting III–V materials</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystal growth</topic><topic>Crystals</topic><topic>Diffraction</topic><topic>Dislocation density</topic><topic>Exact sciences and technology</topic><topic>Line shape</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><topic>Vapor phase epitaxy</topic><topic>Vapor phase epitaxy; growth from vapor phase</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kröncke, Hanno</creatorcontrib><creatorcontrib>Figge, Stephan</creatorcontrib><creatorcontrib>Aschenbrenner, Timo</creatorcontrib><creatorcontrib>Hommel, Detlef</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kröncke, Hanno</au><au>Figge, Stephan</au><au>Aschenbrenner, Timo</au><au>Hommel, Detlef</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of AlN by pulsed and conventional MOVPE</atitle><jtitle>Journal of crystal growth</jtitle><date>2013-10-15</date><risdate>2013</risdate><volume>381</volume><spage>100</spage><epage>106</epage><pages>100-106</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>Aluminium nitride was grown on c-plane sapphire by metal organic vapor phase epitaxy (MOVPE) at temperatures of 1070°C by a pulsed growth method and in continuous growth mode at temperatures up to 1270°C. For both methods the V/III ratio was varied and different approaches for the growth start were investigated. The crystal quality was mainly characterized by scanning electron microscopy and high resolution X-ray diffraction which showed unusual line shape for certain samples. Both growth methods enabled the growth of more than 1μm thick, atomically flat, Al-polar layers with edge type dislocation densities in the order of 3×1010cm−2 for pulsed samples and 5×109cm−2 for conventionally grown samples.
•We have grown AlN by pulsed and conventional MOVPE in the same reactor.•The influence of growth start, V/III ratio and atmospheric conditions was investigated.•The growth mechanism was investigated by reflectometry in pulsed mode.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2013.06.038</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 2013-10, Vol.381, p.100-106 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1464571286 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | A1. High resolution X-ray diffraction A3. Organometallic vapor phase epitaxy Aluminium nitride Aluminum B1. Nitrides B1. Sapphire B2. Semiconducting III–V materials Cross-disciplinary physics: materials science rheology Crystal growth Crystals Diffraction Dislocation density Exact sciences and technology Line shape Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Physics Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation Vapor phase epitaxy Vapor phase epitaxy growth from vapor phase |
| title | Growth of AlN by pulsed and conventional MOVPE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T19%3A27%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20of%20AlN%20by%20pulsed%20and%20conventional%20MOVPE&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Kr%C3%B6ncke,%20Hanno&rft.date=2013-10-15&rft.volume=381&rft.spage=100&rft.epage=106&rft.pages=100-106&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/j.jcrysgro.2013.06.038&rft_dat=%3Cproquest_cross%3E1464571286%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1464571286&rft_id=info:pmid/&rft_els_id=S0022024813004776&rfr_iscdi=true |