All-Solution-Processed InGaO3(ZnO)m Thin Films with Layered Structure

We fabricated the crystallized InGaZnO thin films by sol-gel process and high-temperature annealing at 900°C. Prior to the deposition of the InGaZnO, ZnO buffer layers were also coated by sol-gel process, which was followed by thermal annealing. After the synthesis and annealing of the InGaZnO, the...

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Veröffentlicht in:	Journal of nanomaterials 2013, Vol.2013 (2013), p.1-6
Hauptverfasser:	Cho, Hyung Hee, Shin, Sangwoo, Kim, Jun Hyeon, Cho, Sung Woon, Cho, Hyung Koun
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Buffer layers Grains Nanomaterials Nanostructure Nitrates Solar energy Studies Superlattices Thin films Zinc oxide
Online-Zugang:	Volltext
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