Electrical investigation of the Au/n+–GaAs and Au/n-porous GaAs structures

The electrical properties of Au/n+–GaAs and Au/n-porous GaAs metal–semiconductor structures were investigated using room temperature current–voltage I(V) and capacitance–voltage C(V) measurements. The electrical parameters of these structures such as ideality factor, barrier height potential, series...

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Veröffentlicht in:	Physica. B, Condensed matter Condensed matter, 2013-08, Vol.422, p.64-71
Hauptverfasser:	Saghrouni, H., Hannachi, R., Jomni, S., Beji, L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Barriers Bias Condensed matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Contact resistance, contact potential Electric potential Electrical measurement Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Gallium arsenide Gallium arsenides Gold Interface states Mathematical models Metal–semiconductor structure Physics Porous GaAs Thin films and multilayers
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