Trap density characterization through low-frequency noise in junctionless transistors

[Display omitted] •Current noise spectral density of JNTs with different gate dielectrics is evaluated.•Devices with SiO2 gate dielectric present lower trap density than the HfSiON ones.•Lorentzian noise is more clearly observed in SiO2 gate dielectric devices.•HfSiON dielectric devices present time constant higher than SiO2 ones. This work evaluates, for the first time, the trap density of Junctionless Nanowire Transistors (JNTs) of two technologies produced with different gate dielectrics through the low-frequency noise (LFN) characterization. Along the work, the LFN resultant from both devices was compared in linear and saturation regimes for different gate biases, showing that these devices can exhibit either 1/f or Lorentzian as the dominant noise source depending on the technology and gate bias. Such analysis showed that devices with SiO2 gate dielectric have presented only one corner frequency over the whole frequency range whereas two corner frequencies with different time constants could be observed in devices with HfSiON gate dielectric. The trap density of both devices showed to be similar to the values reported for inversion mode devices in different recent papers, in the order of 1016cm−3eV−1 and 1019cm−3eV−1, for SiO2 and HfSiON gate dielectrics, respectively.