Acoustic-phonon-assisted quantum control of qubit states near the Si/SiO(2) interface

The waiting time between load/initialization and readout of electron spin qubit is related to electron tunneling between the donor and Si/SiO(2) interface. Impacts of energy valley interference in silicon, lattice temperature, and screening of metallic gate on the waiting time associated with acoustic-phonon-assisted electron tunneling have been investigated. The results show that interface valley-orbit coupling causes its oscillation with donor depth and the influence of gate screening is significant when the SiO(2) thickness is smaller than 10 nm. Moreover, the influences of these factors are strongest at critical electric field.