Study of Two One-Dimensional Multi Tunnel Junctions Arrays Structures by SIMON
Multi Tunnel Junctions (MTJs) have attracted much attention recently in the [symbolomitted]elds of Single-Electron Transistor (SET) and Single-Electron Memory (SEM). In this paper, we investigate a nano-device structure using a two one dimensional array MTJs connected to the basic Single Electron Ci...
Gespeichert in:
Veröffentlicht in: | World journal of nano science and engineering 2012-12, Vol.2 (4), p.176-180 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 180 |
---|---|
container_issue | 4 |
container_start_page | 176 |
container_title | World journal of nano science and engineering |
container_volume | 2 |
creator | Touati, Amine Chatbouri, Samir Sghaier, Nabil Kalboussi, Adel |
description | Multi Tunnel Junctions (MTJs) have attracted much attention recently in the [symbolomitted]elds of Single-Electron Transistor (SET) and Single-Electron Memory (SEM). In this paper, we investigate a nano-device structure using a two one dimensional array MTJs connected to the basic Single Electron Circuits, in order to analyze the impact of physical parameters on the performances and application of this structure. The device generates can operate at room temperature. The simulation of single-electron circuit demonstrates with Monte Carlo simulator, SIMON. |
doi_str_mv | 10.4236/wjnse.2012.24023 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1464547738</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1464547738</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1218-e064b8e7ac748b81e6598e1345adc8f525cbdae75c58496194fdddca5bc65bbf3</originalsourceid><addsrcrecordid>eNo9kD1rwzAQhkVpoSHN3lFjF6eSLMnKGNKvlHwMSWchyWdwcORUsgj-93Wa0ne5l-Ph4B6EHimZcpbL5_PBR5gyQtmUccLyGzRiVNKMzyS7_e-C36NJjAcyRBClOBuhza5LZY_bCu_PLd56yF7qI_hYt940eJ2arsb75D00-DN51w37iOchmD7iXReS61KAiG2Pd8v1dvOA7irTRJj8zTH6envdLz6y1fZ9uZivMkcZVRkQya2CwriCK6soSDFTQHMuTOlUJZhwtjRQCCfU8AOd8aosS2eEdVJYW-Vj9HS9ewrtd4LY6WMdHTSN8dCmqCmXXPCiyNWAkivqQhtjgEqfQn00odeU6Is9_WtPX-zpX3v5D0c3Y8g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1464547738</pqid></control><display><type>article</type><title>Study of Two One-Dimensional Multi Tunnel Junctions Arrays Structures by SIMON</title><source>EZB-FREE-00999 freely available EZB journals</source><creator>Touati, Amine ; Chatbouri, Samir ; Sghaier, Nabil ; Kalboussi, Adel</creator><creatorcontrib>Touati, Amine ; Chatbouri, Samir ; Sghaier, Nabil ; Kalboussi, Adel</creatorcontrib><description>Multi Tunnel Junctions (MTJs) have attracted much attention recently in the [symbolomitted]elds of Single-Electron Transistor (SET) and Single-Electron Memory (SEM). In this paper, we investigate a nano-device structure using a two one dimensional array MTJs connected to the basic Single Electron Circuits, in order to analyze the impact of physical parameters on the performances and application of this structure. The device generates can operate at room temperature. The simulation of single-electron circuit demonstrates with Monte Carlo simulator, SIMON.</description><identifier>ISSN: 2161-4954</identifier><identifier>EISSN: 2161-4962</identifier><identifier>DOI: 10.4236/wjnse.2012.24023</identifier><language>eng</language><subject>Arrays ; Circuits ; Computer simulation ; Nanocomposites ; Nanomaterials ; Nanostructure ; Single-electron transistors ; Tunnel junctions</subject><ispartof>World journal of nano science and engineering, 2012-12, Vol.2 (4), p.176-180</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1218-e064b8e7ac748b81e6598e1345adc8f525cbdae75c58496194fdddca5bc65bbf3</citedby><cites>FETCH-LOGICAL-c1218-e064b8e7ac748b81e6598e1345adc8f525cbdae75c58496194fdddca5bc65bbf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Touati, Amine</creatorcontrib><creatorcontrib>Chatbouri, Samir</creatorcontrib><creatorcontrib>Sghaier, Nabil</creatorcontrib><creatorcontrib>Kalboussi, Adel</creatorcontrib><title>Study of Two One-Dimensional Multi Tunnel Junctions Arrays Structures by SIMON</title><title>World journal of nano science and engineering</title><description>Multi Tunnel Junctions (MTJs) have attracted much attention recently in the [symbolomitted]elds of Single-Electron Transistor (SET) and Single-Electron Memory (SEM). In this paper, we investigate a nano-device structure using a two one dimensional array MTJs connected to the basic Single Electron Circuits, in order to analyze the impact of physical parameters on the performances and application of this structure. The device generates can operate at room temperature. The simulation of single-electron circuit demonstrates with Monte Carlo simulator, SIMON.</description><subject>Arrays</subject><subject>Circuits</subject><subject>Computer simulation</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Single-electron transistors</subject><subject>Tunnel junctions</subject><issn>2161-4954</issn><issn>2161-4962</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNo9kD1rwzAQhkVpoSHN3lFjF6eSLMnKGNKvlHwMSWchyWdwcORUsgj-93Wa0ne5l-Ph4B6EHimZcpbL5_PBR5gyQtmUccLyGzRiVNKMzyS7_e-C36NJjAcyRBClOBuhza5LZY_bCu_PLd56yF7qI_hYt940eJ2arsb75D00-DN51w37iOchmD7iXReS61KAiG2Pd8v1dvOA7irTRJj8zTH6envdLz6y1fZ9uZivMkcZVRkQya2CwriCK6soSDFTQHMuTOlUJZhwtjRQCCfU8AOd8aosS2eEdVJYW-Vj9HS9ewrtd4LY6WMdHTSN8dCmqCmXXPCiyNWAkivqQhtjgEqfQn00odeU6Is9_WtPX-zpX3v5D0c3Y8g</recordid><startdate>20121201</startdate><enddate>20121201</enddate><creator>Touati, Amine</creator><creator>Chatbouri, Samir</creator><creator>Sghaier, Nabil</creator><creator>Kalboussi, Adel</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20121201</creationdate><title>Study of Two One-Dimensional Multi Tunnel Junctions Arrays Structures by SIMON</title><author>Touati, Amine ; Chatbouri, Samir ; Sghaier, Nabil ; Kalboussi, Adel</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1218-e064b8e7ac748b81e6598e1345adc8f525cbdae75c58496194fdddca5bc65bbf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Arrays</topic><topic>Circuits</topic><topic>Computer simulation</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>Single-electron transistors</topic><topic>Tunnel junctions</topic><toplevel>online_resources</toplevel><creatorcontrib>Touati, Amine</creatorcontrib><creatorcontrib>Chatbouri, Samir</creatorcontrib><creatorcontrib>Sghaier, Nabil</creatorcontrib><creatorcontrib>Kalboussi, Adel</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>World journal of nano science and engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Touati, Amine</au><au>Chatbouri, Samir</au><au>Sghaier, Nabil</au><au>Kalboussi, Adel</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of Two One-Dimensional Multi Tunnel Junctions Arrays Structures by SIMON</atitle><jtitle>World journal of nano science and engineering</jtitle><date>2012-12-01</date><risdate>2012</risdate><volume>2</volume><issue>4</issue><spage>176</spage><epage>180</epage><pages>176-180</pages><issn>2161-4954</issn><eissn>2161-4962</eissn><abstract>Multi Tunnel Junctions (MTJs) have attracted much attention recently in the [symbolomitted]elds of Single-Electron Transistor (SET) and Single-Electron Memory (SEM). In this paper, we investigate a nano-device structure using a two one dimensional array MTJs connected to the basic Single Electron Circuits, in order to analyze the impact of physical parameters on the performances and application of this structure. The device generates can operate at room temperature. The simulation of single-electron circuit demonstrates with Monte Carlo simulator, SIMON.</abstract><doi>10.4236/wjnse.2012.24023</doi><tpages>5</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 2161-4954 |
ispartof | World journal of nano science and engineering, 2012-12, Vol.2 (4), p.176-180 |
issn | 2161-4954 2161-4962 |
language | eng |
recordid | cdi_proquest_miscellaneous_1464547738 |
source | EZB-FREE-00999 freely available EZB journals |
subjects | Arrays Circuits Computer simulation Nanocomposites Nanomaterials Nanostructure Single-electron transistors Tunnel junctions |
title | Study of Two One-Dimensional Multi Tunnel Junctions Arrays Structures by SIMON |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T06%3A43%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Study%20of%20Two%20One-Dimensional%20Multi%20Tunnel%20Junctions%20Arrays%20Structures%20by%20SIMON&rft.jtitle=World%20journal%20of%20nano%20science%20and%20engineering&rft.au=Touati,%20Amine&rft.date=2012-12-01&rft.volume=2&rft.issue=4&rft.spage=176&rft.epage=180&rft.pages=176-180&rft.issn=2161-4954&rft.eissn=2161-4962&rft_id=info:doi/10.4236/wjnse.2012.24023&rft_dat=%3Cproquest_cross%3E1464547738%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1464547738&rft_id=info:pmid/&rfr_iscdi=true |