Effects of oxygen thermal annealing treatment on formation of ohmic contacts to n-GaN

A contact scheme to undoped and n-type GaN was identified that does not require a post deposition anneal. As-deposited Ti/Al/Ti/Au usually forms a Schottky contact. However, we find that by means of an oxygen rapid thermal annealing prior to metal deposition, the contact will develop an ohmic behavi...

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Veröffentlicht in:	Applied physics letters 2012-12, Vol.101 (24)
Hauptverfasser:	Hou, Wenting, Detchprohm, Theeradetch, Wetzel, Christian
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Contact Contact resistance Deposition Fermi surfaces Gallium Reversion Titanium
Online-Zugang:	Volltext
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