Identification of geometrically necessary dislocations in solid phase crystallized poly-Si

In this work, the presence of geometrically necessary dislocations (GNDs) in polycrystalline silicon (poly-Si) thin films was detected, suggesting that plastic deformation occurs during the solid phase crystallization (SPC) process of amorphous silicon (a-Si:H). Electron backscatter diffraction was...

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Veröffentlicht in:	Journal of applied physics 2013-07, Vol.114 (4)
Hauptverfasser:	Law, Felix, Yi, Yang, Hidayat, Widenborg, Per I., Luther, Joachim, Hoex, Bram
Format:	Artikel
Sprache:	eng
Schlagworte:	Arrays Crystallization Dislocations Forming Grains Solid phases Statistical process control Thin films
Online-Zugang:	Volltext
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