Characterization of a dielectric/GaN system using atom probe tomography
Characterization of Al2O3 gate dielectric on GaN using pulsed laser Atom Probe Tomography is reported. Atomic layer deposition was used to grow 5 nm of aluminum oxide on Ga-polar GaN. No oxidation of the surface of the semiconductor was observed and the interface was found to be non-abrupt. A signif...
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| Veröffentlicht in: | Applied physics letters 2013-10, Vol.103 (15) |
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| container_issue | 15 |
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| container_title | Applied physics letters |
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| creator | Mazumder, Baishakhi Esposto, Michele Hung, Ting H. Mates, Tom Rajan, Siddharth Speck, James S. |
| description | Characterization of Al2O3 gate dielectric on GaN using pulsed laser Atom Probe Tomography is reported. Atomic layer deposition was used to grow 5 nm of aluminum oxide on Ga-polar GaN. No oxidation of the surface of the semiconductor was observed and the interface was found to be non-abrupt. A significant amount of carbon impurities (1019/cm3) were detected in the dielectric film that matches well with the estimated bulk trap density from C–V measurements. Our experiments suggest possible correlation between trap-related electrical hysteresis and the observed impurity concentration in these films. |
| doi_str_mv | 10.1063/1.4824211 |
| format | Article |
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Atomic layer deposition was used to grow 5 nm of aluminum oxide on Ga-polar GaN. No oxidation of the surface of the semiconductor was observed and the interface was found to be non-abrupt. A significant amount of carbon impurities (1019/cm3) were detected in the dielectric film that matches well with the estimated bulk trap density from C–V measurements. Our experiments suggest possible correlation between trap-related electrical hysteresis and the observed impurity concentration in these films.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4824211</identifier><language>eng</language><subject>Aluminum oxide ; Carbon ; Density ; Dielectrics ; Gallium nitrides ; Impurities ; Semiconductors ; Tomography</subject><ispartof>Applied physics letters, 2013-10, Vol.103 (15)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c262t-73085c8d53badf18d914a3966164134177ff4a819f6d810e1520df07b4ae2fcc3</citedby><cites>FETCH-LOGICAL-c262t-73085c8d53badf18d914a3966164134177ff4a819f6d810e1520df07b4ae2fcc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Mazumder, Baishakhi</creatorcontrib><creatorcontrib>Esposto, Michele</creatorcontrib><creatorcontrib>Hung, Ting H.</creatorcontrib><creatorcontrib>Mates, Tom</creatorcontrib><creatorcontrib>Rajan, Siddharth</creatorcontrib><creatorcontrib>Speck, James S.</creatorcontrib><title>Characterization of a dielectric/GaN system using atom probe tomography</title><title>Applied physics letters</title><description>Characterization of Al2O3 gate dielectric on GaN using pulsed laser Atom Probe Tomography is reported. Atomic layer deposition was used to grow 5 nm of aluminum oxide on Ga-polar GaN. No oxidation of the surface of the semiconductor was observed and the interface was found to be non-abrupt. A significant amount of carbon impurities (1019/cm3) were detected in the dielectric film that matches well with the estimated bulk trap density from C–V measurements. 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Atomic layer deposition was used to grow 5 nm of aluminum oxide on Ga-polar GaN. No oxidation of the surface of the semiconductor was observed and the interface was found to be non-abrupt. A significant amount of carbon impurities (1019/cm3) were detected in the dielectric film that matches well with the estimated bulk trap density from C–V measurements. Our experiments suggest possible correlation between trap-related electrical hysteresis and the observed impurity concentration in these films.</abstract><doi>10.1063/1.4824211</doi></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2013-10, Vol.103 (15) |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Aluminum oxide Carbon Density Dielectrics Gallium nitrides Impurities Semiconductors Tomography |
| title | Characterization of a dielectric/GaN system using atom probe tomography |
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