Resistive switching artificially induced in a dielectric/ferroelectric composite diode

Ferroelectric resistive switching was artificially induced in a conductive ferroelectric capacitor by inserting a thin dielectric layer at an electrode/ferroelectric interface. Ferroelectric capacitors consisting of semiconducting Bi-deficient Bi1−δFeO3 layers with SrRuO3 electrodes showed no resist...

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Veröffentlicht in:	Applied physics letters 2013-10, Vol.103 (15)
Hauptverfasser:	Tsurumaki-Fukuchi, Atsushi, Yamada, Hiroyuki, Sawa, Akihito
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitors Dielectrics Diodes Electrodes Ferroelectric materials Ferroelectricity Switching Thin films
Online-Zugang:	Volltext
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