Microfabricated suspended island platform for the measurement of in-plane thermal conductivity of thin films and nanostructured materials with consideration of contact resistance
A technique based on suspended islands is described to measure the in-plane thermal conductivity of thin films and nano-structured materials, and is also employed for measurements of several samples with a single measurement platform. Using systematic steps for measurements, the characterization of...
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Veröffentlicht in: | Review of scientific instruments 2013-10, Vol.84 (10), p.105003-105003 |
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container_title | Review of scientific instruments |
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creator | Alaie, Seyedhamidreza Goettler, Drew F Abbas, Khawar Su, Mehmet F Reinke, Charles M El-Kady, Ihab Leseman, Zayd C |
description | A technique based on suspended islands is described to measure the in-plane thermal conductivity of thin films and nano-structured materials, and is also employed for measurements of several samples with a single measurement platform. Using systematic steps for measurements, the characterization of the thermal resistances of a sample and its contacts are studied. The calibration of the contacts in this method is independent of the geometry, size, materials, and uniformity of contacts. To verify the technique, two different Si samples with different thicknesses and two samples of the same SiN(x) wafer are characterized on a single device. One of the Si samples is also characterized by another technique, which verifies the current results. Characterization of the two SiN(x) samples taken from the same wafer showed less than 1% difference in the measured thermal conductivities, indicating the precision of the method. Additionally, one of the SiN(x) samples is characterized and then demounted, remounted, and characterized for a second time. The comparison showed the change in the thermal resistance of the contact in multiple measurements could be as small as 0.2 K/μW, if a similar sample is used. |
doi_str_mv | 10.1063/1.4824076 |
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Using systematic steps for measurements, the characterization of the thermal resistances of a sample and its contacts are studied. The calibration of the contacts in this method is independent of the geometry, size, materials, and uniformity of contacts. To verify the technique, two different Si samples with different thicknesses and two samples of the same SiN(x) wafer are characterized on a single device. One of the Si samples is also characterized by another technique, which verifies the current results. Characterization of the two SiN(x) samples taken from the same wafer showed less than 1% difference in the measured thermal conductivities, indicating the precision of the method. Additionally, one of the SiN(x) samples is characterized and then demounted, remounted, and characterized for a second time. 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title | Microfabricated suspended island platform for the measurement of in-plane thermal conductivity of thin films and nanostructured materials with consideration of contact resistance |
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