Biexcitons in semiconductor quantum dot ensembles
The effects of confinement on biexciton renormalization in self‐assembled InAs and interfacial GaAs quantum dot (QD) ensembles are studied using two‐dimensional Fourier‐transform spectroscopy. We find that in thermally annealed InAs QDs, changes in the biexciton transition energy are strongly correl...
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| Veröffentlicht in: | Physica Status Solidi. B: Basic Solid State Physics 2013-09, Vol.250 (9), p.1753-1759 |
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| container_title | Physica Status Solidi. B: Basic Solid State Physics |
| container_volume | 250 |
| creator | Moody, Galan Singh, Rohan Li, Hebin Akimov, Ilya A. Bayer, Manfred Reuter, Dirk Wieck, Andreas D. Bracker, Allan S. Gammon, Daniel Cundiff, Steven T. |
| description | The effects of confinement on biexciton renormalization in self‐assembled InAs and interfacial GaAs quantum dot (QD) ensembles are studied using two‐dimensional Fourier‐transform spectroscopy. We find that in thermally annealed InAs QDs, changes in the biexciton transition energy are strongly correlated with those of the exciton and that the biexciton binding energy is similar for all QDs in the ensemble. These results are in contrast to those from GaAs QDs formed from interfacial fluctuations of a narrow quantum well (QW). In both the GaAs QW and QDs, correlation is reduced and the biexciton binding exhibits a strong dependence on localization. Comparison with simulations reveals how confinement and Coulomb interactions modify biexciton renormalization. |
| doi_str_mv | 10.1002/pssb.201200725 |
| format | Article |
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We find that in thermally annealed InAs QDs, changes in the biexciton transition energy are strongly correlated with those of the exciton and that the biexciton binding energy is similar for all QDs in the ensemble. These results are in contrast to those from GaAs QDs formed from interfacial fluctuations of a narrow quantum well (QW). In both the GaAs QW and QDs, correlation is reduced and the biexciton binding exhibits a strong dependence on localization. Comparison with simulations reveals how confinement and Coulomb interactions modify biexciton renormalization.</description><identifier>ISSN: 0370-1972</identifier><identifier>EISSN: 1521-3951</identifier><identifier>DOI: 10.1002/pssb.201200725</identifier><language>eng</language><publisher>Blackwell Publishing Ltd</publisher><subject>biexciton ; Binding energy ; Confinement ; Correlation ; four-wave mixing ; Gallium arsenide ; Gallium arsenides ; Indium arsenides ; Quantum dots ; quantum well ; Semiconductors</subject><ispartof>Physica Status Solidi. B: Basic Solid State Physics, 2013-09, Vol.250 (9), p.1753-1759</ispartof><rights>2013 WILEY-VCH Verlag GmbH & Co. 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Comparison with simulations reveals how confinement and Coulomb interactions modify biexciton renormalization.</description><subject>biexciton</subject><subject>Binding energy</subject><subject>Confinement</subject><subject>Correlation</subject><subject>four-wave mixing</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Indium arsenides</subject><subject>Quantum dots</subject><subject>quantum well</subject><subject>Semiconductors</subject><issn>0370-1972</issn><issn>1521-3951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNo9kD1PwzAQQC0EEqWwMmdkSfH5I45HWtGCVKAoIEbLca6SIR9tnIj235OqqNPpdO_d8Ai5BToBStn9JoR8wigwShWTZ2QEkkHMtYRzMqJc0Ri0YpfkKoRvOjDAYURg6nHnfNfUIfJ1FLDyrqmL3nVNG217W3d9FRVNF2E93PISwzW5WNsy4M3_HJPP-ePH7Clevi2eZw_L2HGhZYyaijyVWnCuCisKx9HyxKGyTDLHEqcc0zqXTlKFjMlc6jRJ5TpHnaR2rfiY3B3_btpm22PoTOWDw7K0NTZ9MCBEqqRgKQyoPqK_vsS92bS-su3eADWHMOYQxpzCmFWWTU_b4MZH14cOdyfXtj8mUVxJ8_W6MDBfQabfXwzlfwgVaCc</recordid><startdate>201309</startdate><enddate>201309</enddate><creator>Moody, Galan</creator><creator>Singh, Rohan</creator><creator>Li, Hebin</creator><creator>Akimov, Ilya A.</creator><creator>Bayer, Manfred</creator><creator>Reuter, Dirk</creator><creator>Wieck, Andreas D.</creator><creator>Bracker, Allan S.</creator><creator>Gammon, Daniel</creator><creator>Cundiff, Steven T.</creator><general>Blackwell Publishing Ltd</general><scope>BSCLL</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201309</creationdate><title>Biexcitons in semiconductor quantum dot ensembles</title><author>Moody, Galan ; Singh, Rohan ; Li, Hebin ; Akimov, Ilya A. ; Bayer, Manfred ; Reuter, Dirk ; Wieck, Andreas D. ; Bracker, Allan S. ; Gammon, Daniel ; Cundiff, Steven T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3495-e904b8594337da4dc3ea36ce7a252c26c7c299b5c507e225b598685fbe968af73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>biexciton</topic><topic>Binding energy</topic><topic>Confinement</topic><topic>Correlation</topic><topic>four-wave mixing</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Indium arsenides</topic><topic>Quantum dots</topic><topic>quantum well</topic><topic>Semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Moody, Galan</creatorcontrib><creatorcontrib>Singh, Rohan</creatorcontrib><creatorcontrib>Li, Hebin</creatorcontrib><creatorcontrib>Akimov, Ilya A.</creatorcontrib><creatorcontrib>Bayer, Manfred</creatorcontrib><creatorcontrib>Reuter, Dirk</creatorcontrib><creatorcontrib>Wieck, Andreas D.</creatorcontrib><creatorcontrib>Bracker, Allan S.</creatorcontrib><creatorcontrib>Gammon, Daniel</creatorcontrib><creatorcontrib>Cundiff, Steven T.</creatorcontrib><collection>Istex</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica Status Solidi. B: Basic Solid State Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Moody, Galan</au><au>Singh, Rohan</au><au>Li, Hebin</au><au>Akimov, Ilya A.</au><au>Bayer, Manfred</au><au>Reuter, Dirk</au><au>Wieck, Andreas D.</au><au>Bracker, Allan S.</au><au>Gammon, Daniel</au><au>Cundiff, Steven T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Biexcitons in semiconductor quantum dot ensembles</atitle><jtitle>Physica Status Solidi. B: Basic Solid State Physics</jtitle><addtitle>Phys. Status Solidi B</addtitle><date>2013-09</date><risdate>2013</risdate><volume>250</volume><issue>9</issue><spage>1753</spage><epage>1759</epage><pages>1753-1759</pages><issn>0370-1972</issn><eissn>1521-3951</eissn><abstract>The effects of confinement on biexciton renormalization in self‐assembled InAs and interfacial GaAs quantum dot (QD) ensembles are studied using two‐dimensional Fourier‐transform spectroscopy. We find that in thermally annealed InAs QDs, changes in the biexciton transition energy are strongly correlated with those of the exciton and that the biexciton binding energy is similar for all QDs in the ensemble. These results are in contrast to those from GaAs QDs formed from interfacial fluctuations of a narrow quantum well (QW). In both the GaAs QW and QDs, correlation is reduced and the biexciton binding exhibits a strong dependence on localization. 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| identifier | ISSN: 0370-1972 |
| ispartof | Physica Status Solidi. B: Basic Solid State Physics, 2013-09, Vol.250 (9), p.1753-1759 |
| issn | 0370-1972 1521-3951 |
| language | eng |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | biexciton Binding energy Confinement Correlation four-wave mixing Gallium arsenide Gallium arsenides Indium arsenides Quantum dots quantum well Semiconductors |
| title | Biexcitons in semiconductor quantum dot ensembles |
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