Characteristics of brush plated copper indium telluride films

Copper indium telluride (CIT) films were deposited for the first time by the brush plating technique at different substrate temperatures in the range of 30–80 °C and at a constant deposition current density of 1 mA cm −2 .The Films exhibited single phase CIT. The grain size increased with increase o...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2013-09, Vol.24 (9), p.3412-3417
Hauptverfasser:	Murali, K. R., Muthusamy, P., Panneerselvam, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Atomic force microscopy BRUSH PLATING Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Copper Copper plating CURRENT DENSITY DEPOSITION ELECTRICAL CONDUCTIVITY Electron, ion, and scanning probe microscopy Electronics Exact sciences and technology Grain size GRAIN SIZE AND SHAPE Indium tellurides Materials Materials Science Optical and Electronic Materials Physics PLATE PLATING Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc Structure of solids and liquids crystallography SURFACE FINISH Surface roughness TELLURIDES
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