Characteristics of brush plated copper indium telluride films
Copper indium telluride (CIT) films were deposited for the first time by the brush plating technique at different substrate temperatures in the range of 30–80 °C and at a constant deposition current density of 1 mA cm −2 .The Films exhibited single phase CIT. The grain size increased with increase o...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2013-09, Vol.24 (9), p.3412-3417 |
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| container_issue | 9 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | Murali, K. R. Muthusamy, P. Panneerselvam, A. |
| description | Copper indium telluride (CIT) films were deposited for the first time by the brush plating technique at different substrate temperatures in the range of 30–80 °C and at a constant deposition current density of 1 mA cm
−2
.The Films exhibited single phase CIT. The grain size increased with increase of substrate temperature. Optical band gap of the films varied in the range of 0.98–1.00 eV. Atomic force microscopy studies indicated that the grain size and surface roughness vary from 20 to 50 nm and 1.0 to 1.5 nm, respectively with increase of substrate temperature. The films exhibited photoconductivity. |
| doi_str_mv | 10.1007/s10854-013-1263-6 |
| format | Article |
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−2
.The Films exhibited single phase CIT. The grain size increased with increase of substrate temperature. Optical band gap of the films varied in the range of 0.98–1.00 eV. Atomic force microscopy studies indicated that the grain size and surface roughness vary from 20 to 50 nm and 1.0 to 1.5 nm, respectively with increase of substrate temperature. The films exhibited photoconductivity.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-013-1263-6</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Applied sciences ; Atomic force microscopy ; BRUSH PLATING ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Condensed matter: structure, mechanical and thermal properties ; Copper ; Copper plating ; CURRENT DENSITY ; DEPOSITION ; ELECTRICAL CONDUCTIVITY ; Electron, ion, and scanning probe microscopy ; Electronics ; Exact sciences and technology ; Grain size ; GRAIN SIZE AND SHAPE ; Indium tellurides ; Materials ; Materials Science ; Optical and Electronic Materials ; Physics ; PLATE ; PLATING ; Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc ; Structure of solids and liquids; crystallography ; SURFACE FINISH ; Surface roughness ; TELLURIDES</subject><ispartof>Journal of materials science. Materials in electronics, 2013-09, Vol.24 (9), p.3412-3417</ispartof><rights>Springer Science+Business Media New York 2013</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c379t-c04914e9fc76ccb09b7129ebdc79700cf76d0f5448a7cca7f0a3b387f0bac4af3</citedby><cites>FETCH-LOGICAL-c379t-c04914e9fc76ccb09b7129ebdc79700cf76d0f5448a7cca7f0a3b387f0bac4af3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-013-1263-6$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-013-1263-6$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27680847$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Murali, K. R.</creatorcontrib><creatorcontrib>Muthusamy, P.</creatorcontrib><creatorcontrib>Panneerselvam, A.</creatorcontrib><title>Characteristics of brush plated copper indium telluride films</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>Copper indium telluride (CIT) films were deposited for the first time by the brush plating technique at different substrate temperatures in the range of 30–80 °C and at a constant deposition current density of 1 mA cm
−2
.The Films exhibited single phase CIT. The grain size increased with increase of substrate temperature. Optical band gap of the films varied in the range of 0.98–1.00 eV. Atomic force microscopy studies indicated that the grain size and surface roughness vary from 20 to 50 nm and 1.0 to 1.5 nm, respectively with increase of substrate temperature. The films exhibited photoconductivity.</description><subject>Applied sciences</subject><subject>Atomic force microscopy</subject><subject>BRUSH PLATING</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Copper</subject><subject>Copper plating</subject><subject>CURRENT DENSITY</subject><subject>DEPOSITION</subject><subject>ELECTRICAL CONDUCTIVITY</subject><subject>Electron, ion, and scanning probe microscopy</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Grain size</subject><subject>GRAIN SIZE AND SHAPE</subject><subject>Indium tellurides</subject><subject>Materials</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>PLATE</subject><subject>PLATING</subject><subject>Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc</subject><subject>Structure of solids and liquids; crystallography</subject><subject>SURFACE FINISH</subject><subject>Surface roughness</subject><subject>TELLURIDES</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp1kEtLxDAUhYMoOI7-AHcFEdxUbx5tmoULGXzBgBsFdyG9TZwMnbYm7cJ_b4YZRARXd5HvHE4-Qs4pXFMAeRMpVIXIgfKcspLn5QGZ0ULyXFTs_ZDMQBUyFwVjx-QkxjUAlIJXM3K7WJlgcLTBx9FjzHqX1WGKq2xozWibDPthsCHzXeOnTTbatp2Cb2zmfLuJp-TImTbas_2dk7eH-9fFU758eXxe3C1z5FKNOYJQVFjlUJaINahaUqZs3aBUEgCdLBtwhRCVkYhGOjC85lW6tUFhHJ-Tq13vEPrPycZRb3zEtMV0tp-ipikq0-e4SujFH3TdT6FL6xLFABQTyc-c0B2FoY8xWKeH4DcmfGkKeitU74TqJFRvhept5nLfbCKa1gXToY8_QSbLCiohE8d2XExP3YcNvxb8W_4NF-iFMA</recordid><startdate>20130901</startdate><enddate>20130901</enddate><creator>Murali, K. R.</creator><creator>Muthusamy, P.</creator><creator>Panneerselvam, A.</creator><general>Springer US</general><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><scope>7QQ</scope><scope>7U5</scope><scope>H8G</scope></search><sort><creationdate>20130901</creationdate><title>Characteristics of brush plated copper indium telluride films</title><author>Murali, K. R. ; Muthusamy, P. ; Panneerselvam, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c379t-c04914e9fc76ccb09b7129ebdc79700cf76d0f5448a7cca7f0a3b387f0bac4af3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Applied sciences</topic><topic>Atomic force microscopy</topic><topic>BRUSH PLATING</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Copper</topic><topic>Copper plating</topic><topic>CURRENT DENSITY</topic><topic>DEPOSITION</topic><topic>ELECTRICAL CONDUCTIVITY</topic><topic>Electron, ion, and scanning probe microscopy</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Grain size</topic><topic>GRAIN SIZE AND SHAPE</topic><topic>Indium tellurides</topic><topic>Materials</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Physics</topic><topic>PLATE</topic><topic>PLATING</topic><topic>Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc</topic><topic>Structure of solids and liquids; crystallography</topic><topic>SURFACE FINISH</topic><topic>Surface roughness</topic><topic>TELLURIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Murali, K. R.</creatorcontrib><creatorcontrib>Muthusamy, P.</creatorcontrib><creatorcontrib>Panneerselvam, A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Copper Technical Reference Library</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Murali, K. R.</au><au>Muthusamy, P.</au><au>Panneerselvam, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characteristics of brush plated copper indium telluride films</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2013-09-01</date><risdate>2013</risdate><volume>24</volume><issue>9</issue><spage>3412</spage><epage>3417</epage><pages>3412-3417</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Copper indium telluride (CIT) films were deposited for the first time by the brush plating technique at different substrate temperatures in the range of 30–80 °C and at a constant deposition current density of 1 mA cm
−2
.The Films exhibited single phase CIT. The grain size increased with increase of substrate temperature. Optical band gap of the films varied in the range of 0.98–1.00 eV. Atomic force microscopy studies indicated that the grain size and surface roughness vary from 20 to 50 nm and 1.0 to 1.5 nm, respectively with increase of substrate temperature. The films exhibited photoconductivity.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10854-013-1263-6</doi><tpages>6</tpages></addata></record> |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Applied sciences Atomic force microscopy BRUSH PLATING Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Copper Copper plating CURRENT DENSITY DEPOSITION ELECTRICAL CONDUCTIVITY Electron, ion, and scanning probe microscopy Electronics Exact sciences and technology Grain size GRAIN SIZE AND SHAPE Indium tellurides Materials Materials Science Optical and Electronic Materials Physics PLATE PLATING Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc Structure of solids and liquids crystallography SURFACE FINISH Surface roughness TELLURIDES |
| title | Characteristics of brush plated copper indium telluride films |
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