Microresonator-based all-optical transistor

We present theoretical estimates for a low-loss, all-optical transistor using a microresonator device whose fields interact evanescently with rubidium vapor. We use a four-level, electromagnetically induced absorption scheme to couple the light fields of the transistor. We show results indicating th...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of the Optical Society of America. B, Optical physics Optical physics, 2013-05, Vol.30 (5), p.1329-1334
Hauptverfasser:	Clader, B. D., Hendrickson, S. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Beams (radiation) Joining Noise levels Rubidium Semiconductor devices Switches Switching Transistors
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!