An In-Depth Study Linking the Infrared Spectroscopy and Photoluminescence of Porous Silicon during Ambient Hydrogen Peroxide Oxidation
We carefully tailored a porous silicon (pSi) surface by oxidation with hydrogen peroxide (H2O2) to determine the time-dependent changes in nano-crystallite surface chemistries (e.g., Si–O-Si, SiHx [x = 1,2], OySiH [y=2,3], and SiOH/H2O) and their influence on the pSi photoluminescence (PL). The rela...
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| Veröffentlicht in: | Applied spectroscopy 2013-05, Vol.67 (5), p.570-577 |
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| creator | Caras, Caley A. Reynard, Justin M. Bright, Frank V. |
| description | We carefully tailored a porous silicon (pSi) surface by oxidation with hydrogen peroxide (H2O2) to determine the time-dependent changes in nano-crystallite surface chemistries (e.g., Si–O-Si, SiHx [x = 1,2], OySiH [y=2,3], and SiOH/H2O) and their influence on the pSi photoluminescence (PL). The relationship between infrared band amplitudes and PL intensity were evaluated under H2O2 and O3 (previously studied) oxidation. The pSi surface composition under O3 and H2O2 oxidation conditions tended to, save the OySiH (y=2,3) species, approach similar values at the longest oxidation times studied, but they took very different paths in reaching these end points. Furthermore, the pSi surface compositions that exhibit maximum/minimum PL under each oxidant are very different. |
| doi_str_mv | 10.1366/12-06886 |
| format | Article |
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The relationship between infrared band amplitudes and PL intensity were evaluated under H2O2 and O3 (previously studied) oxidation. The pSi surface composition under O3 and H2O2 oxidation conditions tended to, save the OySiH (y=2,3) species, approach similar values at the longest oxidation times studied, but they took very different paths in reaching these end points. Furthermore, the pSi surface compositions that exhibit maximum/minimum PL under each oxidant are very different.</description><identifier>ISSN: 0003-7028</identifier><identifier>EISSN: 1943-3530</identifier><identifier>DOI: 10.1366/12-06886</identifier><identifier>PMID: 23643047</identifier><language>eng</language><publisher>London, England: SAGE Publications</publisher><subject>Hydrogen peroxide ; Infrared ; Infrared spectroscopy ; Nanocrystals ; Oxidation ; Photoluminescence ; Porous silicon ; Surface chemistry</subject><ispartof>Applied spectroscopy, 2013-05, Vol.67 (5), p.570-577</ispartof><rights>2013 Society for Applied Spectroscopy</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c346t-12699d0ab73e19bc5adda56a03354e005cfceb13dbe242bf2eb635485b29b17e3</citedby><cites>FETCH-LOGICAL-c346t-12699d0ab73e19bc5adda56a03354e005cfceb13dbe242bf2eb635485b29b17e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://journals.sagepub.com/doi/pdf/10.1366/12-06886$$EPDF$$P50$$Gsage$$H</linktopdf><linktohtml>$$Uhttps://journals.sagepub.com/doi/10.1366/12-06886$$EHTML$$P50$$Gsage$$H</linktohtml><link.rule.ids>314,780,784,21819,27924,27925,43621,43622</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/23643047$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Caras, Caley A.</creatorcontrib><creatorcontrib>Reynard, Justin M.</creatorcontrib><creatorcontrib>Bright, Frank V.</creatorcontrib><title>An In-Depth Study Linking the Infrared Spectroscopy and Photoluminescence of Porous Silicon during Ambient Hydrogen Peroxide Oxidation</title><title>Applied spectroscopy</title><addtitle>Appl Spectrosc</addtitle><description>We carefully tailored a porous silicon (pSi) surface by oxidation with hydrogen peroxide (H2O2) to determine the time-dependent changes in nano-crystallite surface chemistries (e.g., Si–O-Si, SiHx [x = 1,2], OySiH [y=2,3], and SiOH/H2O) and their influence on the pSi photoluminescence (PL). The relationship between infrared band amplitudes and PL intensity were evaluated under H2O2 and O3 (previously studied) oxidation. The pSi surface composition under O3 and H2O2 oxidation conditions tended to, save the OySiH (y=2,3) species, approach similar values at the longest oxidation times studied, but they took very different paths in reaching these end points. Furthermore, the pSi surface compositions that exhibit maximum/minimum PL under each oxidant are very different.</description><subject>Hydrogen peroxide</subject><subject>Infrared</subject><subject>Infrared spectroscopy</subject><subject>Nanocrystals</subject><subject>Oxidation</subject><subject>Photoluminescence</subject><subject>Porous silicon</subject><subject>Surface chemistry</subject><issn>0003-7028</issn><issn>1943-3530</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkU1v1DAQhi1ERZeCxC9AviD1EvBH4sTHVemXtFJX2nKO_DHZdUnsYDsS-wf43bi0wIEDlxmN5tGrmfdF6B0lHykX4hNlFRFdJ16gFZU1r3jDyUu0IoTwqiWsO0WvU3ooYyN58wqdMi5qTup2hX6sPb711WeY8wHv8mKPeOP8V-f3OB-grIaoIli8m8HkGJIJ8xErb_H2EHIYl8l5SAa8ARwGvA0xLAnv3OhM8Ngu8VFoPWkHPuObo41hDx5vIYbvzgK-K1VlF_wbdDKoMcHb536Gvlxd3l_cVJu769uL9aYyvBa5okxIaYnSLQcqtWmUtaoRinDe1FDeM4MBTbnVwGqmBwZalE3XaCY1bYGfofMn3TmGbwuk3E-unD-OykO5vKc1l61oO9r9H-W1JLI4Kf6ipjiUIgz9HN2k4rGnpH8MqKes_xVQQd8_qy56AvsH_J1IAT48AUntoX8IS_TFkH-FfgJY3JeF</recordid><startdate>201305</startdate><enddate>201305</enddate><creator>Caras, Caley A.</creator><creator>Reynard, Justin M.</creator><creator>Bright, Frank V.</creator><general>SAGE Publications</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201305</creationdate><title>An In-Depth Study Linking the Infrared Spectroscopy and Photoluminescence of Porous Silicon during Ambient Hydrogen Peroxide Oxidation</title><author>Caras, Caley A. ; Reynard, Justin M. ; Bright, Frank V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c346t-12699d0ab73e19bc5adda56a03354e005cfceb13dbe242bf2eb635485b29b17e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Hydrogen peroxide</topic><topic>Infrared</topic><topic>Infrared spectroscopy</topic><topic>Nanocrystals</topic><topic>Oxidation</topic><topic>Photoluminescence</topic><topic>Porous silicon</topic><topic>Surface chemistry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Caras, Caley A.</creatorcontrib><creatorcontrib>Reynard, Justin M.</creatorcontrib><creatorcontrib>Bright, Frank V.</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied spectroscopy</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Caras, Caley A.</au><au>Reynard, Justin M.</au><au>Bright, Frank V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An In-Depth Study Linking the Infrared Spectroscopy and Photoluminescence of Porous Silicon during Ambient Hydrogen Peroxide Oxidation</atitle><jtitle>Applied spectroscopy</jtitle><addtitle>Appl Spectrosc</addtitle><date>2013-05</date><risdate>2013</risdate><volume>67</volume><issue>5</issue><spage>570</spage><epage>577</epage><pages>570-577</pages><issn>0003-7028</issn><eissn>1943-3530</eissn><abstract>We carefully tailored a porous silicon (pSi) surface by oxidation with hydrogen peroxide (H2O2) to determine the time-dependent changes in nano-crystallite surface chemistries (e.g., Si–O-Si, SiHx [x = 1,2], OySiH [y=2,3], and SiOH/H2O) and their influence on the pSi photoluminescence (PL). The relationship between infrared band amplitudes and PL intensity were evaluated under H2O2 and O3 (previously studied) oxidation. The pSi surface composition under O3 and H2O2 oxidation conditions tended to, save the OySiH (y=2,3) species, approach similar values at the longest oxidation times studied, but they took very different paths in reaching these end points. Furthermore, the pSi surface compositions that exhibit maximum/minimum PL under each oxidant are very different.</abstract><cop>London, England</cop><pub>SAGE Publications</pub><pmid>23643047</pmid><doi>10.1366/12-06886</doi><tpages>8</tpages></addata></record> |
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| subjects | Hydrogen peroxide Infrared Infrared spectroscopy Nanocrystals Oxidation Photoluminescence Porous silicon Surface chemistry |
| title | An In-Depth Study Linking the Infrared Spectroscopy and Photoluminescence of Porous Silicon during Ambient Hydrogen Peroxide Oxidation |
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