Influence of gate-source/drain misalignment on the performance of bulk FinFETs by a 3D full band Monte Carlo simulation

We investigate the influence of gate-source/drain （G-S/D） misalignment on the performance of bulk fin field effect transistors （FinFETs） through the three-dimensional （3D） full band Monte Carlo simulator. Several scat- tering mechanisms, such as acoustic and optical phonon scattering, ionized impuri...

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