Influence of drain and substrate bias on the TID effect for deep submicron technology devices
This paper presents a study of the total ionization effects of a 0.18 #m technology. The electrical para meters of NMOSFETs were monitored before and after irradiation with 6~Co at several dose levels under different drain and substrate biases. Key parameters such as offstate leakage current and thr...
Gespeichert in:
| Veröffentlicht in: | Journal of semiconductors 2012-04, Vol.33 (4), p.64-68 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 68 |
|---|---|
| container_issue | 4 |
| container_start_page | 64 |
| container_title | Journal of semiconductors |
| container_volume | 33 |
| creator | 黄辉祥 刘张李 胡志远 张正选 陈明 毕大炜 邹世昌 |
| description | This paper presents a study of the total ionization effects of a 0.18 #m technology. The electrical para meters of NMOSFETs were monitored before and after irradiation with 6~Co at several dose levels under different drain and substrate biases. Key parameters such as offstate leakage current and threshold voltage shift were studied to reflect the ionizing radiation tolerance, and explained using a parasitic transistors model. 3D device simulation was conducted to provide a better understanding of the dependence of device characteristics on drain and substrate biases. |
| doi_str_mv | 10.1088/1674-4926/33/4/044008 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1439760789</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>41466583</cqvip_id><sourcerecordid>1439760789</sourcerecordid><originalsourceid>FETCH-LOGICAL-c378t-5c3061d44d0c1fd701aabb06fa95baf7c919c9a1b887fc5e2c8f5d750f211d4f3</originalsourceid><addsrcrecordid>eNo9kMtqwzAQRbVooSHNJxTUXTeupUi2pGVJX4FAN-myCFkeJQJHSiS70L-vTUJWA3PPGYaL0AMlz5RIWdJa8IKrZV0yVvKScE6IvEGz6_4OLXL2DSFKSjaGM_SzDq4bIFjA0eE2GR-wCS3OQ5P7ZHrAjTcZx4D7PeDt-hWDc2B77GLCLcBxIg_epokAuw-xi7u_Mfn1FvI9unWmy7C4zDn6fn_brj6LzdfHevWyKSwTsi8qy0hNW85bYqlrBaHGNA2pnVFVY5ywiiqrDG2kFM5WsLTSVa2oiFvSUXNsjp7Od48pngbIvT74bKHrTIA4ZE05U6ImQqoRrc7o-HLOCZw-Jn8w6U9ToqcW9dSWntrSjGmuzy2O3uPF28ewO_mwu4qc8rquJGP_bTxzPw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1439760789</pqid></control><display><type>article</type><title>Influence of drain and substrate bias on the TID effect for deep submicron technology devices</title><source>IOP Publishing Journals</source><source>Alma/SFX Local Collection</source><creator>黄辉祥 刘张李 胡志远 张正选 陈明 毕大炜 邹世昌</creator><creatorcontrib>黄辉祥 刘张李 胡志远 张正选 陈明 毕大炜 邹世昌</creatorcontrib><description>This paper presents a study of the total ionization effects of a 0.18 #m technology. The electrical para meters of NMOSFETs were monitored before and after irradiation with 6~Co at several dose levels under different drain and substrate biases. Key parameters such as offstate leakage current and threshold voltage shift were studied to reflect the ionizing radiation tolerance, and explained using a parasitic transistors model. 3D device simulation was conducted to provide a better understanding of the dependence of device characteristics on drain and substrate biases.</description><identifier>ISSN: 1674-4926</identifier><identifier>DOI: 10.1088/1674-4926/33/4/044008</identifier><language>eng</language><subject>Devices ; Drains ; Ionizing radiation ; Leakage current ; Mathematical models ; Semiconductors ; Three dimensional models ; Tolerances ; 关键参数 ; 寄生晶体管 ; 技术设备 ; 深亚微米 ; 电离效应 ; 电离辐射 ; 衬底偏压 ; 阈值电压漂移</subject><ispartof>Journal of semiconductors, 2012-04, Vol.33 (4), p.64-68</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c378t-5c3061d44d0c1fd701aabb06fa95baf7c919c9a1b887fc5e2c8f5d750f211d4f3</citedby><cites>FETCH-LOGICAL-c378t-5c3061d44d0c1fd701aabb06fa95baf7c919c9a1b887fc5e2c8f5d750f211d4f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/94689X/94689X.jpg</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>黄辉祥 刘张李 胡志远 张正选 陈明 毕大炜 邹世昌</creatorcontrib><title>Influence of drain and substrate bias on the TID effect for deep submicron technology devices</title><title>Journal of semiconductors</title><addtitle>Chinese Journal of Semiconductors</addtitle><description>This paper presents a study of the total ionization effects of a 0.18 #m technology. The electrical para meters of NMOSFETs were monitored before and after irradiation with 6~Co at several dose levels under different drain and substrate biases. Key parameters such as offstate leakage current and threshold voltage shift were studied to reflect the ionizing radiation tolerance, and explained using a parasitic transistors model. 3D device simulation was conducted to provide a better understanding of the dependence of device characteristics on drain and substrate biases.</description><subject>Devices</subject><subject>Drains</subject><subject>Ionizing radiation</subject><subject>Leakage current</subject><subject>Mathematical models</subject><subject>Semiconductors</subject><subject>Three dimensional models</subject><subject>Tolerances</subject><subject>关键参数</subject><subject>寄生晶体管</subject><subject>技术设备</subject><subject>深亚微米</subject><subject>电离效应</subject><subject>电离辐射</subject><subject>衬底偏压</subject><subject>阈值电压漂移</subject><issn>1674-4926</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNo9kMtqwzAQRbVooSHNJxTUXTeupUi2pGVJX4FAN-myCFkeJQJHSiS70L-vTUJWA3PPGYaL0AMlz5RIWdJa8IKrZV0yVvKScE6IvEGz6_4OLXL2DSFKSjaGM_SzDq4bIFjA0eE2GR-wCS3OQ5P7ZHrAjTcZx4D7PeDt-hWDc2B77GLCLcBxIg_epokAuw-xi7u_Mfn1FvI9unWmy7C4zDn6fn_brj6LzdfHevWyKSwTsi8qy0hNW85bYqlrBaHGNA2pnVFVY5ywiiqrDG2kFM5WsLTSVa2oiFvSUXNsjp7Od48pngbIvT74bKHrTIA4ZE05U6ImQqoRrc7o-HLOCZw-Jn8w6U9ToqcW9dSWntrSjGmuzy2O3uPF28ewO_mwu4qc8rquJGP_bTxzPw</recordid><startdate>20120401</startdate><enddate>20120401</enddate><creator>黄辉祥 刘张李 胡志远 张正选 陈明 毕大炜 邹世昌</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20120401</creationdate><title>Influence of drain and substrate bias on the TID effect for deep submicron technology devices</title><author>黄辉祥 刘张李 胡志远 张正选 陈明 毕大炜 邹世昌</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c378t-5c3061d44d0c1fd701aabb06fa95baf7c919c9a1b887fc5e2c8f5d750f211d4f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Devices</topic><topic>Drains</topic><topic>Ionizing radiation</topic><topic>Leakage current</topic><topic>Mathematical models</topic><topic>Semiconductors</topic><topic>Three dimensional models</topic><topic>Tolerances</topic><topic>关键参数</topic><topic>寄生晶体管</topic><topic>技术设备</topic><topic>深亚微米</topic><topic>电离效应</topic><topic>电离辐射</topic><topic>衬底偏压</topic><topic>阈值电压漂移</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>黄辉祥 刘张李 胡志远 张正选 陈明 毕大炜 邹世昌</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of semiconductors</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>黄辉祥 刘张李 胡志远 张正选 陈明 毕大炜 邹世昌</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of drain and substrate bias on the TID effect for deep submicron technology devices</atitle><jtitle>Journal of semiconductors</jtitle><addtitle>Chinese Journal of Semiconductors</addtitle><date>2012-04-01</date><risdate>2012</risdate><volume>33</volume><issue>4</issue><spage>64</spage><epage>68</epage><pages>64-68</pages><issn>1674-4926</issn><abstract>This paper presents a study of the total ionization effects of a 0.18 #m technology. The electrical para meters of NMOSFETs were monitored before and after irradiation with 6~Co at several dose levels under different drain and substrate biases. Key parameters such as offstate leakage current and threshold voltage shift were studied to reflect the ionizing radiation tolerance, and explained using a parasitic transistors model. 3D device simulation was conducted to provide a better understanding of the dependence of device characteristics on drain and substrate biases.</abstract><doi>10.1088/1674-4926/33/4/044008</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1674-4926 |
| ispartof | Journal of semiconductors, 2012-04, Vol.33 (4), p.64-68 |
| issn | 1674-4926 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1439760789 |
| source | IOP Publishing Journals; Alma/SFX Local Collection |
| subjects | Devices Drains Ionizing radiation Leakage current Mathematical models Semiconductors Three dimensional models Tolerances 关键参数 寄生晶体管 技术设备 深亚微米 电离效应 电离辐射 衬底偏压 阈值电压漂移 |
| title | Influence of drain and substrate bias on the TID effect for deep submicron technology devices |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T22%3A31%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Influence%20of%20drain%20and%20substrate%20bias%20on%20the%20TID%20effect%20for%20deep%20submicron%20technology%20devices&rft.jtitle=Journal%20of%20semiconductors&rft.au=%E9%BB%84%E8%BE%89%E7%A5%A5%20%E5%88%98%E5%BC%A0%E6%9D%8E%20%E8%83%A1%E5%BF%97%E8%BF%9C%20%E5%BC%A0%E6%AD%A3%E9%80%89%20%E9%99%88%E6%98%8E%20%E6%AF%95%E5%A4%A7%E7%82%9C%20%E9%82%B9%E4%B8%96%E6%98%8C&rft.date=2012-04-01&rft.volume=33&rft.issue=4&rft.spage=64&rft.epage=68&rft.pages=64-68&rft.issn=1674-4926&rft_id=info:doi/10.1088/1674-4926/33/4/044008&rft_dat=%3Cproquest_cross%3E1439760789%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1439760789&rft_id=info:pmid/&rft_cqvip_id=41466583&rfr_iscdi=true |