Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure

The failure of a bipolar static induction transistor (BSIT) often occurs in the transient process between the conducting-state and the blocking-state, so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices. The...

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Veröffentlicht in:	Journal of semiconductors 2011-11, Vol.32 (11), p.114005-1-5
Hauptverfasser:	Wang, Yongshun (永顺王), Feng, Jingjing (晶晶冯), Liu, Chunjuan (春娟刘), Wang, Zaixing (再兴汪), Zhang, Caizhen (彩珍张), Chang, Peng (鹏常)
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Sprache:	eng
Schlagworte:	Blocking Conversion Devices Gates Semiconductor devices Semiconductors Switching Transistors
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creator	Wang, Yongshun (永顺王) Feng, Jingjing (晶晶冯) Liu, Chunjuan (春娟刘) Wang, Zaixing (再兴汪) Zhang, Caizhen (彩珍张) Chang, Peng (鹏常)
description	The failure of a bipolar static induction transistor (BSIT) often occurs in the transient process between the conducting-state and the blocking-state, so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices. The dynamical characteristics of the transient process between conducting-state and blocking-state BSITs are represented in detail in this paper. The influences of material, structural and technological parameters on the dynamical performances of BSITs are discussed. The mechanism underlying the transient conversion process is analyzed in depth. The technological approaches are developed to improve the dynamical characteristics of BSITs.
doi_str_mv	10.1088/1674-4926/32/11/114005
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subjects	Blocking Conversion Devices Gates Semiconductor devices Semiconductors Switching Transistors
title	Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure
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