Properties of epitaxial ZnO:P films

Epitaxial ZnO:P films have been produced by annealing ZnP 2 substrates in atomic oxygen and characterized by X-ray diffraction, atomic force microscopy, Hall effect measurements, X-ray photoelectron spectroscopy, and photoluminescence measurements. The X-ray diffraction patterns of the films showed...

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Veröffentlicht in:	Inorganic materials 2013-03, Vol.49 (3), p.272-277
Hauptverfasser:	Rogozin, I. V., Georgobiani, A. N., Kotlyarevsky, M. B., Demin, V. I.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry Chemistry and Materials Science Diffraction Electrical resistivity Epitaxy Excitation spectra Hall effect Industrial Chemistry/Chemical Engineering Inorganic Chemistry Materials Science Photoluminescence Spectra X-rays
Online-Zugang:	Volltext
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