Properties of epitaxial ZnO:P films
Epitaxial ZnO:P films have been produced by annealing ZnP 2 substrates in atomic oxygen and characterized by X-ray diffraction, atomic force microscopy, Hall effect measurements, X-ray photoelectron spectroscopy, and photoluminescence measurements. The X-ray diffraction patterns of the films showed...
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| Veröffentlicht in: | Inorganic materials 2013-03, Vol.49 (3), p.272-277 |
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| creator | Rogozin, I. V. Georgobiani, A. N. Kotlyarevsky, M. B. Demin, V. I. |
| description | Epitaxial ZnO:P films have been produced by annealing ZnP
2
substrates in atomic oxygen and characterized by X-ray diffraction, atomic force microscopy, Hall effect measurements, X-ray photoelectron spectroscopy, and photoluminescence measurements. The X-ray diffraction patterns of the films showed the 002 peak, indicating that their c axis was normal to the substrate surface. According to the Hall effect data, the layers were p-type, with a resistivity of ∼20 Ω cm, hole mobility of ∼9 cm
2
/(V s), and hole concentration of ∼7.8 × 10
17
cm
−3
. The photoluminescence spectra of the ZnO:P films showed a peak at 3.356 eV (neutral acceptor bound exciton). Our results indicate that the ZnO:P films contain the P
Zn
-2V
Zn
defect complex as a shallow acceptor responsible for their
p
-type conductivity. |
| doi_str_mv | 10.1134/S0020168513030175 |
| format | Article |
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2
substrates in atomic oxygen and characterized by X-ray diffraction, atomic force microscopy, Hall effect measurements, X-ray photoelectron spectroscopy, and photoluminescence measurements. The X-ray diffraction patterns of the films showed the 002 peak, indicating that their c axis was normal to the substrate surface. According to the Hall effect data, the layers were p-type, with a resistivity of ∼20 Ω cm, hole mobility of ∼9 cm
2
/(V s), and hole concentration of ∼7.8 × 10
17
cm
−3
. The photoluminescence spectra of the ZnO:P films showed a peak at 3.356 eV (neutral acceptor bound exciton). Our results indicate that the ZnO:P films contain the P
Zn
-2V
Zn
defect complex as a shallow acceptor responsible for their
p
-type conductivity.</description><identifier>ISSN: 0020-1685</identifier><identifier>EISSN: 1608-3172</identifier><identifier>DOI: 10.1134/S0020168513030175</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Chemistry ; Chemistry and Materials Science ; Diffraction ; Electrical resistivity ; Epitaxy ; Excitation spectra ; Hall effect ; Industrial Chemistry/Chemical Engineering ; Inorganic Chemistry ; Materials Science ; Photoluminescence ; Spectra ; X-rays</subject><ispartof>Inorganic materials, 2013-03, Vol.49 (3), p.272-277</ispartof><rights>Pleiades Publishing, Ltd. 2013</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c321t-39a783cec0ef8721ada5005d4eec8a8859b43fdbbae68202a206a3c05a463dfa3</citedby><cites>FETCH-LOGICAL-c321t-39a783cec0ef8721ada5005d4eec8a8859b43fdbbae68202a206a3c05a463dfa3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S0020168513030175$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S0020168513030175$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Rogozin, I. V.</creatorcontrib><creatorcontrib>Georgobiani, A. N.</creatorcontrib><creatorcontrib>Kotlyarevsky, M. B.</creatorcontrib><creatorcontrib>Demin, V. I.</creatorcontrib><title>Properties of epitaxial ZnO:P films</title><title>Inorganic materials</title><addtitle>Inorg Mater</addtitle><description>Epitaxial ZnO:P films have been produced by annealing ZnP
2
substrates in atomic oxygen and characterized by X-ray diffraction, atomic force microscopy, Hall effect measurements, X-ray photoelectron spectroscopy, and photoluminescence measurements. The X-ray diffraction patterns of the films showed the 002 peak, indicating that their c axis was normal to the substrate surface. According to the Hall effect data, the layers were p-type, with a resistivity of ∼20 Ω cm, hole mobility of ∼9 cm
2
/(V s), and hole concentration of ∼7.8 × 10
17
cm
−3
. The photoluminescence spectra of the ZnO:P films showed a peak at 3.356 eV (neutral acceptor bound exciton). Our results indicate that the ZnO:P films contain the P
Zn
-2V
Zn
defect complex as a shallow acceptor responsible for their
p
-type conductivity.</description><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Diffraction</subject><subject>Electrical resistivity</subject><subject>Epitaxy</subject><subject>Excitation spectra</subject><subject>Hall effect</subject><subject>Industrial Chemistry/Chemical Engineering</subject><subject>Inorganic Chemistry</subject><subject>Materials Science</subject><subject>Photoluminescence</subject><subject>Spectra</subject><subject>X-rays</subject><issn>0020-1685</issn><issn>1608-3172</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kEFLxDAQhYMoWFd_gLeCFy_VSdKkqTdZXBUWdkG9eAmz6US6dNuadEH_vS3rTfA0h_d9D-YxdsnhhnOZ374ACODaKC5BAi_UEUu4BpNJXohjlkxxNuWn7CzGLQDkypQJu1qHrqcw1BTTzqfU1wN-1dik7-3qbp36utnFc3bisYl08Xtn7G3x8Dp_yparx-f5_TJzUvAhkyUWRjpyQN4UgmOFCkBVOZEzaIwqN7n01WaDpI0AgQI0SgcKcy0rj3LGrg-9feg-9xQHu6ujo6bBlrp9tDyXZaEBpB5RfkBd6GIM5G0f6h2Gb8vBToPYP4OMjjg4cWTbDwp22-1DO370j_QDpbtgXQ</recordid><startdate>20130301</startdate><enddate>20130301</enddate><creator>Rogozin, I. V.</creator><creator>Georgobiani, A. N.</creator><creator>Kotlyarevsky, M. B.</creator><creator>Demin, V. I.</creator><general>SP MAIK Nauka/Interperiodica</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130301</creationdate><title>Properties of epitaxial ZnO:P films</title><author>Rogozin, I. V. ; Georgobiani, A. N. ; Kotlyarevsky, M. B. ; Demin, V. I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c321t-39a783cec0ef8721ada5005d4eec8a8859b43fdbbae68202a206a3c05a463dfa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Chemistry</topic><topic>Chemistry and Materials Science</topic><topic>Diffraction</topic><topic>Electrical resistivity</topic><topic>Epitaxy</topic><topic>Excitation spectra</topic><topic>Hall effect</topic><topic>Industrial Chemistry/Chemical Engineering</topic><topic>Inorganic Chemistry</topic><topic>Materials Science</topic><topic>Photoluminescence</topic><topic>Spectra</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rogozin, I. V.</creatorcontrib><creatorcontrib>Georgobiani, A. N.</creatorcontrib><creatorcontrib>Kotlyarevsky, M. B.</creatorcontrib><creatorcontrib>Demin, V. I.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Inorganic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rogozin, I. V.</au><au>Georgobiani, A. N.</au><au>Kotlyarevsky, M. B.</au><au>Demin, V. I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Properties of epitaxial ZnO:P films</atitle><jtitle>Inorganic materials</jtitle><stitle>Inorg Mater</stitle><date>2013-03-01</date><risdate>2013</risdate><volume>49</volume><issue>3</issue><spage>272</spage><epage>277</epage><pages>272-277</pages><issn>0020-1685</issn><eissn>1608-3172</eissn><abstract>Epitaxial ZnO:P films have been produced by annealing ZnP
2
substrates in atomic oxygen and characterized by X-ray diffraction, atomic force microscopy, Hall effect measurements, X-ray photoelectron spectroscopy, and photoluminescence measurements. The X-ray diffraction patterns of the films showed the 002 peak, indicating that their c axis was normal to the substrate surface. According to the Hall effect data, the layers were p-type, with a resistivity of ∼20 Ω cm, hole mobility of ∼9 cm
2
/(V s), and hole concentration of ∼7.8 × 10
17
cm
−3
. The photoluminescence spectra of the ZnO:P films showed a peak at 3.356 eV (neutral acceptor bound exciton). Our results indicate that the ZnO:P films contain the P
Zn
-2V
Zn
defect complex as a shallow acceptor responsible for their
p
-type conductivity.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S0020168513030175</doi><tpages>6</tpages></addata></record> |
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| language | eng |
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| source | SpringerNature Journals |
| subjects | Chemistry Chemistry and Materials Science Diffraction Electrical resistivity Epitaxy Excitation spectra Hall effect Industrial Chemistry/Chemical Engineering Inorganic Chemistry Materials Science Photoluminescence Spectra X-rays |
| title | Properties of epitaxial ZnO:P films |
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