Analytical model for the dispersion of sub-threshold current in organic thin-film transistors

This paper proposes an equivalent circuit model to analyze the reason for the dispersion of sub-threshold current （also known as zero-current point dispersion） in organic thin-film transistors. Based on the level 61 amorphous silicon thin-film transistor model in star-HSPICE, the results from our eq...

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Veröffentlicht in:	Journal of semiconductors 2011-11, Vol.32 (11), p.55-59
1. Verfasser:	陈映平商立伟姬濯宇王宏韩买兴刘欣刘明
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Sprache:	eng
Schlagworte:	Constraining Contact resistance Dispersions Equivalent circuits Gates (circuits) HSPICE Semiconductor devices Semiconductors Thin films Transistors 亚阈值电流分散性接触电阻晶体管模型有机薄膜晶体管等效电路模型零电流
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container_issue	11
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container_title	Journal of semiconductors
container_volume	32
creator	陈映平商立伟姬濯宇王宏韩买兴刘欣刘明
description	This paper proposes an equivalent circuit model to analyze the reason for the dispersion of sub-threshold current （also known as zero-current point dispersion） in organic thin-film transistors. Based on the level 61 amorphous silicon thin-film transistor model in star-HSPICE, the results from our equivalent circuit model simulation reveal that zero-current point dispersion can be attributed to two factors： large contact resistance and small gate resistance. Furthermore, it is found that decreasing the contact resistance and increasing the gate resistance can efficiently reduce the dispersion. If the contact resistance can be controlled to 0 g2, all the zero-current points can gather together at the base point. A large gate resistance is good for constraining the dispersion of the zero-current points and gate leakage. The variances of the zero-current points are 0.0057 and nearly 0 when the gate resistances are 17 MΩ and 276 MΩ, respectively.
doi_str_mv	10.1088/1674-4926/32/11/114004
format	Article
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Based on the level 61 amorphous silicon thin-film transistor model in star-HSPICE, the results from our equivalent circuit model simulation reveal that zero-current point dispersion can be attributed to two factors： large contact resistance and small gate resistance. Furthermore, it is found that decreasing the contact resistance and increasing the gate resistance can efficiently reduce the dispersion. If the contact resistance can be controlled to 0 g2, all the zero-current points can gather together at the base point. A large gate resistance is good for constraining the dispersion of the zero-current points and gate leakage. 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Based on the level 61 amorphous silicon thin-film transistor model in star-HSPICE, the results from our equivalent circuit model simulation reveal that zero-current point dispersion can be attributed to two factors： large contact resistance and small gate resistance. Furthermore, it is found that decreasing the contact resistance and increasing the gate resistance can efficiently reduce the dispersion. If the contact resistance can be controlled to 0 g2, all the zero-current points can gather together at the base point. A large gate resistance is good for constraining the dispersion of the zero-current points and gate leakage. 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Based on the level 61 amorphous silicon thin-film transistor model in star-HSPICE, the results from our equivalent circuit model simulation reveal that zero-current point dispersion can be attributed to two factors： large contact resistance and small gate resistance. Furthermore, it is found that decreasing the contact resistance and increasing the gate resistance can efficiently reduce the dispersion. If the contact resistance can be controlled to 0 g2, all the zero-current points can gather together at the base point. A large gate resistance is good for constraining the dispersion of the zero-current points and gate leakage. The variances of the zero-current points are 0.0057 and nearly 0 when the gate resistances are 17 MΩ and 276 MΩ, respectively.</abstract><pub>IOP Publishing</pub><doi>10.1088/1674-4926/32/11/114004</doi><tpages>5</tpages></addata></record>
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subjects	Constraining Contact resistance Dispersions Equivalent circuits Gates (circuits) HSPICE Semiconductor devices Semiconductors Thin films Transistors 亚阈值电流分散性接触电阻晶体管模型有机薄膜晶体管等效电路模型零电流
title	Analytical model for the dispersion of sub-threshold current in organic thin-film transistors
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