A process/temperature variation tolerant RSSI

A low power process/temperature variation-tolerant CMOS received signal strength indicator (RSSI) and limiter amplifier are designed using SMIC 0.13 μm CMOS technology. The limiter uses six-stage amplifier architecture for minimum power consideration. The RSSI has a dynamic range of more than 60 dB,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of semiconductors 2012-12, Vol.33 (12), p.106-111
Hauptverfasser: Lei, Qianqian, Lin, Min, Shi, Yin
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 111
container_issue 12
container_start_page 106
container_title Journal of semiconductors
container_volume 33
creator Lei, Qianqian
Lin, Min
Shi, Yin
description A low power process/temperature variation-tolerant CMOS received signal strength indicator (RSSI) and limiter amplifier are designed using SMIC 0.13 μm CMOS technology. The limiter uses six-stage amplifier architecture for minimum power consideration. The RSSI has a dynamic range of more than 60 dB, and the RSSI linearity error is within 4-0.5 dB for an input power from -65 to -8 dBm. The RSSI output voltage is from 0.15 to 1 V and the slope of the curve is 14.17 mV/dB. Furthermore, with the compensation circuit, the proposed RSSI shows good temperature independence and robustness against process variation characteristics. The RSSI with an integrated AGC loop draws 1.5 mA (I and Q paths) from a 1.2 V single supply.
doi_str_mv 10.1088/1674-4926/33/12/125010
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1439759049</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>44110325</cqvip_id><sourcerecordid>1439759049</sourcerecordid><originalsourceid>FETCH-LOGICAL-c261t-5caac219bfbf506fe2ac6df6cfdef47db5e210e6cfda55502bf71b245c13fdcf3</originalsourceid><addsrcrecordid>eNo9UMtqwzAQ1KGFhjS_UNxbL661etk-htBHIFBo2rOQ5VVqcGxHUgr9-9o4BBaW3Z0ZdoaQB6DPQIsiA5WLVJRMZZxnwMaSFOgNWVwPd2QVQlNRWhYFF5QuSLpOBt9bDCGLeBzQm3j2mPwa35jY9F0S-3ZcdjH53O-39-TWmTbg6tKX5Pv15Wvznu4-3rab9S61TEFMpTXGMigrVzlJlUNmrKqdsq5GJ_K6ksiA4jQbKSVllcuhYkJa4K62ji_J06w7_nY6Y4j62ASLbWs67M9Bg-BlLksqyhGqZqj1fQgenR58czT-TwPVUyx6cq8n95pzDUzPsYzExwvxp-8Op6Y7XJlCwAhgkv8D30NjdA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1439759049</pqid></control><display><type>article</type><title>A process/temperature variation tolerant RSSI</title><source>IOP Publishing Journals</source><source>Alma/SFX Local Collection</source><creator>Lei, Qianqian ; Lin, Min ; Shi, Yin</creator><creatorcontrib>Lei, Qianqian ; Lin, Min ; Shi, Yin</creatorcontrib><description>A low power process/temperature variation-tolerant CMOS received signal strength indicator (RSSI) and limiter amplifier are designed using SMIC 0.13 μm CMOS technology. The limiter uses six-stage amplifier architecture for minimum power consideration. The RSSI has a dynamic range of more than 60 dB, and the RSSI linearity error is within 4-0.5 dB for an input power from -65 to -8 dBm. The RSSI output voltage is from 0.15 to 1 V and the slope of the curve is 14.17 mV/dB. Furthermore, with the compensation circuit, the proposed RSSI shows good temperature independence and robustness against process variation characteristics. The RSSI with an integrated AGC loop draws 1.5 mA (I and Q paths) from a 1.2 V single supply.</description><identifier>ISSN: 1674-4926</identifier><identifier>DOI: 10.1088/1674-4926/33/12/125010</identifier><language>eng</language><subject>Circuits ; CMOS ; CMOS技术 ; dBm ; Electric potential ; Limiter amplifiers ; Noise levels ; Robustness ; RSSI ; Semiconductors ; Voltage ; 单电源供电 ; 容限 ; 温度变化 ; 进程 ; 限幅放大器</subject><ispartof>Journal of semiconductors, 2012-12, Vol.33 (12), p.106-111</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c261t-5caac219bfbf506fe2ac6df6cfdef47db5e210e6cfda55502bf71b245c13fdcf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/94689X/94689X.jpg</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Lei, Qianqian</creatorcontrib><creatorcontrib>Lin, Min</creatorcontrib><creatorcontrib>Shi, Yin</creatorcontrib><title>A process/temperature variation tolerant RSSI</title><title>Journal of semiconductors</title><addtitle>Chinese Journal of Semiconductors</addtitle><description>A low power process/temperature variation-tolerant CMOS received signal strength indicator (RSSI) and limiter amplifier are designed using SMIC 0.13 μm CMOS technology. The limiter uses six-stage amplifier architecture for minimum power consideration. The RSSI has a dynamic range of more than 60 dB, and the RSSI linearity error is within 4-0.5 dB for an input power from -65 to -8 dBm. The RSSI output voltage is from 0.15 to 1 V and the slope of the curve is 14.17 mV/dB. Furthermore, with the compensation circuit, the proposed RSSI shows good temperature independence and robustness against process variation characteristics. The RSSI with an integrated AGC loop draws 1.5 mA (I and Q paths) from a 1.2 V single supply.</description><subject>Circuits</subject><subject>CMOS</subject><subject>CMOS技术</subject><subject>dBm</subject><subject>Electric potential</subject><subject>Limiter amplifiers</subject><subject>Noise levels</subject><subject>Robustness</subject><subject>RSSI</subject><subject>Semiconductors</subject><subject>Voltage</subject><subject>单电源供电</subject><subject>容限</subject><subject>温度变化</subject><subject>进程</subject><subject>限幅放大器</subject><issn>1674-4926</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNo9UMtqwzAQ1KGFhjS_UNxbL661etk-htBHIFBo2rOQ5VVqcGxHUgr9-9o4BBaW3Z0ZdoaQB6DPQIsiA5WLVJRMZZxnwMaSFOgNWVwPd2QVQlNRWhYFF5QuSLpOBt9bDCGLeBzQm3j2mPwa35jY9F0S-3ZcdjH53O-39-TWmTbg6tKX5Pv15Wvznu4-3rab9S61TEFMpTXGMigrVzlJlUNmrKqdsq5GJ_K6ksiA4jQbKSVllcuhYkJa4K62ji_J06w7_nY6Y4j62ASLbWs67M9Bg-BlLksqyhGqZqj1fQgenR58czT-TwPVUyx6cq8n95pzDUzPsYzExwvxp-8Op6Y7XJlCwAhgkv8D30NjdA</recordid><startdate>20121201</startdate><enddate>20121201</enddate><creator>Lei, Qianqian</creator><creator>Lin, Min</creator><creator>Shi, Yin</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20121201</creationdate><title>A process/temperature variation tolerant RSSI</title><author>Lei, Qianqian ; Lin, Min ; Shi, Yin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c261t-5caac219bfbf506fe2ac6df6cfdef47db5e210e6cfda55502bf71b245c13fdcf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Circuits</topic><topic>CMOS</topic><topic>CMOS技术</topic><topic>dBm</topic><topic>Electric potential</topic><topic>Limiter amplifiers</topic><topic>Noise levels</topic><topic>Robustness</topic><topic>RSSI</topic><topic>Semiconductors</topic><topic>Voltage</topic><topic>单电源供电</topic><topic>容限</topic><topic>温度变化</topic><topic>进程</topic><topic>限幅放大器</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lei, Qianqian</creatorcontrib><creatorcontrib>Lin, Min</creatorcontrib><creatorcontrib>Shi, Yin</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of semiconductors</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lei, Qianqian</au><au>Lin, Min</au><au>Shi, Yin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A process/temperature variation tolerant RSSI</atitle><jtitle>Journal of semiconductors</jtitle><addtitle>Chinese Journal of Semiconductors</addtitle><date>2012-12-01</date><risdate>2012</risdate><volume>33</volume><issue>12</issue><spage>106</spage><epage>111</epage><pages>106-111</pages><issn>1674-4926</issn><abstract>A low power process/temperature variation-tolerant CMOS received signal strength indicator (RSSI) and limiter amplifier are designed using SMIC 0.13 μm CMOS technology. The limiter uses six-stage amplifier architecture for minimum power consideration. The RSSI has a dynamic range of more than 60 dB, and the RSSI linearity error is within 4-0.5 dB for an input power from -65 to -8 dBm. The RSSI output voltage is from 0.15 to 1 V and the slope of the curve is 14.17 mV/dB. Furthermore, with the compensation circuit, the proposed RSSI shows good temperature independence and robustness against process variation characteristics. The RSSI with an integrated AGC loop draws 1.5 mA (I and Q paths) from a 1.2 V single supply.</abstract><doi>10.1088/1674-4926/33/12/125010</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1674-4926
ispartof Journal of semiconductors, 2012-12, Vol.33 (12), p.106-111
issn 1674-4926
language eng
recordid cdi_proquest_miscellaneous_1439759049
source IOP Publishing Journals; Alma/SFX Local Collection
subjects Circuits
CMOS
CMOS技术
dBm
Electric potential
Limiter amplifiers
Noise levels
Robustness
RSSI
Semiconductors
Voltage
单电源供电
容限
温度变化
进程
限幅放大器
title A process/temperature variation tolerant RSSI
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T15%3A57%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20process/temperature%20variation%20tolerant%20RSSI&rft.jtitle=Journal%20of%20semiconductors&rft.au=Lei,%20Qianqian&rft.date=2012-12-01&rft.volume=33&rft.issue=12&rft.spage=106&rft.epage=111&rft.pages=106-111&rft.issn=1674-4926&rft_id=info:doi/10.1088/1674-4926/33/12/125010&rft_dat=%3Cproquest_cross%3E1439759049%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1439759049&rft_id=info:pmid/&rft_cqvip_id=44110325&rfr_iscdi=true