A process/temperature variation tolerant RSSI

A low power process/temperature variation-tolerant CMOS received signal strength indicator (RSSI) and limiter amplifier are designed using SMIC 0.13 μm CMOS technology. The limiter uses six-stage amplifier architecture for minimum power consideration. The RSSI has a dynamic range of more than 60 dB,...

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Veröffentlicht in:Journal of semiconductors 2012-12, Vol.33 (12), p.106-111
Hauptverfasser: Lei, Qianqian, Lin, Min, Shi, Yin
Format: Artikel
Sprache:eng
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Zusammenfassung:A low power process/temperature variation-tolerant CMOS received signal strength indicator (RSSI) and limiter amplifier are designed using SMIC 0.13 μm CMOS technology. The limiter uses six-stage amplifier architecture for minimum power consideration. The RSSI has a dynamic range of more than 60 dB, and the RSSI linearity error is within 4-0.5 dB for an input power from -65 to -8 dBm. The RSSI output voltage is from 0.15 to 1 V and the slope of the curve is 14.17 mV/dB. Furthermore, with the compensation circuit, the proposed RSSI shows good temperature independence and robustness against process variation characteristics. The RSSI with an integrated AGC loop draws 1.5 mA (I and Q paths) from a 1.2 V single supply.
ISSN:1674-4926
DOI:10.1088/1674-4926/33/12/125010