Activation of p-type conduction in ZnO:N films by annealing in atomic oxygen
ZnO:N epitaxial films have been grown by reactive magnetron sputtering. The effect of annealing in atomic oxygen on the structural and electrical properties of the ZnO:N films has been studied by X-ray diffraction, atomic force microscopy, Hall effect measurements, and X-ray photoelectron spectrosco...
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| Veröffentlicht in: | Inorganic materials 2013-06, Vol.49 (6), p.568-571 |
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| container_title | Inorganic materials |
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| creator | Rogozin, I. V. Georgobiani, A. N. Kotlyarevsky, M. B. Demin, V. I. Lepnev, L. S. |
| description | ZnO:N epitaxial films have been grown by reactive magnetron sputtering. The effect of annealing in atomic oxygen on the structural and electrical properties of the ZnO:N films has been studied by X-ray diffraction, atomic force microscopy, Hall effect measurements, and X-ray photoelectron spectroscopy. By annealing at temperatures from 500 to 700°C, we have obtained
p
-type ZnO:N films with a resistivity of ∼57 Ω cm, hole mobility of ∼2.7 cm
2
/(V s), and hole concentration of ∼6.8 × 10
17
cm
−3
. X-ray photoelectron spectroscopy results suggest that the
p
-type conductivity of the films is due to a decrease in the concentration of (N
2
)
O
and
V
O
donors. |
| doi_str_mv | 10.1134/S0020168513050130 |
| format | Article |
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p
-type ZnO:N films with a resistivity of ∼57 Ω cm, hole mobility of ∼2.7 cm
2
/(V s), and hole concentration of ∼6.8 × 10
17
cm
−3
. X-ray photoelectron spectroscopy results suggest that the
p
-type conductivity of the films is due to a decrease in the concentration of (N
2
)
O
and
V
O
donors.</description><identifier>ISSN: 0020-1685</identifier><identifier>EISSN: 1608-3172</identifier><identifier>DOI: 10.1134/S0020168513050130</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Annealing ; Atomic oxygen ; Chemistry ; Chemistry and Materials Science ; Diffraction ; Electrical properties ; Electrical resistivity ; Epitaxial growth ; Industrial Chemistry/Chemical Engineering ; Inorganic Chemistry ; Materials Science ; Photoelectron spectroscopy ; X-rays</subject><ispartof>Inorganic materials, 2013-06, Vol.49 (6), p.568-571</ispartof><rights>Pleiades Publishing, Ltd. 2013</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c321t-1ca7d17fb211112f41e5a214d09cd45262eebfdf79df1bc2d4662d2cbcdeac3d3</citedby><cites>FETCH-LOGICAL-c321t-1ca7d17fb211112f41e5a214d09cd45262eebfdf79df1bc2d4662d2cbcdeac3d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S0020168513050130$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S0020168513050130$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>315,782,786,27931,27932,41495,42564,51326</link.rule.ids></links><search><creatorcontrib>Rogozin, I. V.</creatorcontrib><creatorcontrib>Georgobiani, A. N.</creatorcontrib><creatorcontrib>Kotlyarevsky, M. B.</creatorcontrib><creatorcontrib>Demin, V. I.</creatorcontrib><creatorcontrib>Lepnev, L. S.</creatorcontrib><title>Activation of p-type conduction in ZnO:N films by annealing in atomic oxygen</title><title>Inorganic materials</title><addtitle>Inorg Mater</addtitle><description>ZnO:N epitaxial films have been grown by reactive magnetron sputtering. The effect of annealing in atomic oxygen on the structural and electrical properties of the ZnO:N films has been studied by X-ray diffraction, atomic force microscopy, Hall effect measurements, and X-ray photoelectron spectroscopy. By annealing at temperatures from 500 to 700°C, we have obtained
p
-type ZnO:N films with a resistivity of ∼57 Ω cm, hole mobility of ∼2.7 cm
2
/(V s), and hole concentration of ∼6.8 × 10
17
cm
−3
. X-ray photoelectron spectroscopy results suggest that the
p
-type conductivity of the films is due to a decrease in the concentration of (N
2
)
O
and
V
O
donors.</description><subject>Annealing</subject><subject>Atomic oxygen</subject><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Diffraction</subject><subject>Electrical properties</subject><subject>Electrical resistivity</subject><subject>Epitaxial growth</subject><subject>Industrial Chemistry/Chemical Engineering</subject><subject>Inorganic Chemistry</subject><subject>Materials Science</subject><subject>Photoelectron spectroscopy</subject><subject>X-rays</subject><issn>0020-1685</issn><issn>1608-3172</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LxDAQhoMouK7-AG85eqlm0vTL27L4BYt7UC9eQpqPJUub1KQV--9tXW-Cc5iBeZ93YF6ELoFcA6Ts5oUQSiAvM0hJRqZ2hBaQkzJJoaDHaDHLyayforMY94QQlpXVAm1WsreforfeYW9wl_Rjp7H0Tg3yZ2kdfnfb22dsbNNGXI9YOKdFY91u1kTvWyux_xp32p2jEyOaqC9-5xK93d-9rh-Tzfbhab3aJDKl0CcgRaGgMDWFqahhoDNBgSlSScUymlOta6NMUSkDtaSK5TlVVNZSaSFTlS7R1eFuF_zHoGPPWxulbhrhtB8iB5ZWRVYSlk8oHFAZfIxBG94F24owciB8To7_SW7y0IMnTqzb6cD3fghu-ugf0zfbs2_f</recordid><startdate>20130601</startdate><enddate>20130601</enddate><creator>Rogozin, I. V.</creator><creator>Georgobiani, A. N.</creator><creator>Kotlyarevsky, M. B.</creator><creator>Demin, V. I.</creator><creator>Lepnev, L. S.</creator><general>SP MAIK Nauka/Interperiodica</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130601</creationdate><title>Activation of p-type conduction in ZnO:N films by annealing in atomic oxygen</title><author>Rogozin, I. V. ; Georgobiani, A. N. ; Kotlyarevsky, M. B. ; Demin, V. I. ; Lepnev, L. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c321t-1ca7d17fb211112f41e5a214d09cd45262eebfdf79df1bc2d4662d2cbcdeac3d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Annealing</topic><topic>Atomic oxygen</topic><topic>Chemistry</topic><topic>Chemistry and Materials Science</topic><topic>Diffraction</topic><topic>Electrical properties</topic><topic>Electrical resistivity</topic><topic>Epitaxial growth</topic><topic>Industrial Chemistry/Chemical Engineering</topic><topic>Inorganic Chemistry</topic><topic>Materials Science</topic><topic>Photoelectron spectroscopy</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rogozin, I. V.</creatorcontrib><creatorcontrib>Georgobiani, A. N.</creatorcontrib><creatorcontrib>Kotlyarevsky, M. B.</creatorcontrib><creatorcontrib>Demin, V. I.</creatorcontrib><creatorcontrib>Lepnev, L. S.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Inorganic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rogozin, I. V.</au><au>Georgobiani, A. N.</au><au>Kotlyarevsky, M. B.</au><au>Demin, V. I.</au><au>Lepnev, L. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Activation of p-type conduction in ZnO:N films by annealing in atomic oxygen</atitle><jtitle>Inorganic materials</jtitle><stitle>Inorg Mater</stitle><date>2013-06-01</date><risdate>2013</risdate><volume>49</volume><issue>6</issue><spage>568</spage><epage>571</epage><pages>568-571</pages><issn>0020-1685</issn><eissn>1608-3172</eissn><abstract>ZnO:N epitaxial films have been grown by reactive magnetron sputtering. The effect of annealing in atomic oxygen on the structural and electrical properties of the ZnO:N films has been studied by X-ray diffraction, atomic force microscopy, Hall effect measurements, and X-ray photoelectron spectroscopy. By annealing at temperatures from 500 to 700°C, we have obtained
p
-type ZnO:N films with a resistivity of ∼57 Ω cm, hole mobility of ∼2.7 cm
2
/(V s), and hole concentration of ∼6.8 × 10
17
cm
−3
. X-ray photoelectron spectroscopy results suggest that the
p
-type conductivity of the films is due to a decrease in the concentration of (N
2
)
O
and
V
O
donors.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S0020168513050130</doi><tpages>4</tpages></addata></record> |
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| issn | 0020-1685 1608-3172 |
| language | eng |
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| source | SpringerNature Journals |
| subjects | Annealing Atomic oxygen Chemistry Chemistry and Materials Science Diffraction Electrical properties Electrical resistivity Epitaxial growth Industrial Chemistry/Chemical Engineering Inorganic Chemistry Materials Science Photoelectron spectroscopy X-rays |
| title | Activation of p-type conduction in ZnO:N films by annealing in atomic oxygen |
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